Abstract: A movement sensor comprises a multi-pole ring magnet, a semiconductor substrate, a first magnetic sensor formed on the semiconductor substrate, and a second magnetic sensor formed on the semiconductor substrate. The first magnetic sensor is configured to produce a first output signal in response to movement of the multi-pole ring magnet, and a centroid of the first and second magnetic sensors are separate and radially aligned on the semiconductor substrate relative to the multi-pole ring magnet. The second magnetic sensor is arranged at a predetermined angle with respect to the first magnetic sensor and is configured to produce a second output signal in response to the movement of the multi-pole ring magnet. The predetermined angle is between 0° and 90° exclusive and is configured to produce a difference in phase between the first and second output signals in response to the movement of the multi-pole ring magnet.

Abstract: A movement sensor comprises a multi-pole ring magnet, a semiconductor substrate, a first magnetic sensor formed on the semiconductor substrate, and a second magnetic sensor formed on the semiconductor substrate. The first magnetic sensor is configured to produce a first output signal in response to movement of the multi-pole ring magnet, and a centroid of the first and second magnetic sensors are separate and radially aligned on the semiconductor substrate relative to the multi-pole ring magnet. The second magnetic sensor is arranged at a predetermined angle with respect to the first magnetic sensor and is configured to produce a second output signal in response to the movement of the multi-pole ring magnet. The predetermined angle is between 0° and 90° exclusive and is configured to produce a difference in phase between the first and second output signals in response to the movement of the multi-pole ring magnet.

Abstract: Methods, apparatuses, and systems for detecting a stray magnetic field are provided. An example apparatus may include a first magnetic sensor element at a first position relative to a magnetic field source to detect a target magnetic field emitted by the magnetic field source, a second magnetic sensor element at a second position relative to the magnetic field source to detect the target magnetic field emitted by the magnetic field source, and a processor element electronically coupled to the first magnetic sensor element and the second magnetic sensor element. In some examples, the processor element may be configured to: receive a first output from the first magnetic sensor element, receive a second output from the second magnetic sensor element, and detect the stray magnetic field interfering with the target magnetic field based at least in part on the first output and the second output.

Abstract: Methods, apparatuses, and systems for detecting a stray magnetic field are provided. An example apparatus may include a first magnetic sensor element at a first position relative to a magnetic field source to detect a target magnetic field emitted by the magnetic field source, a second magnetic sensor element at a second position relative to the magnetic field source to detect the target magnetic field emitted by the magnetic field source, and a processor element electronically coupled to the first magnetic sensor element and the second magnetic sensor element. In some examples, the processor element may be configured to: receive a first output from the first magnetic sensor element, receive a second output from the second magnetic sensor element, and detect the stray magnetic field interfering with the target magnetic field based at least in part on the first output and the second output.

Abstract: An electronic device incorporating a magnet and a Hall-effect sensor to determine a location of a portion of the electronic device. The electronic device comprises a magnet mechanically coupled to a first portion of the electronic device and a Hall-effect sensor coupled to a second portion of the electronic device where the first portion and the second portion are moveable with reference to each other and where the Hall-effect sensor receives a magnetic field of the magnet. The device further comprises an electronic stage that outputs a comparison threshold signal based on peak detecting an output of the Hall-effect sensor using a long term adjustment and resetting the long term adjustment to a current output of the Hall-effect sensor in response to a short term adjustment and a switch electronic stage that switches in response to the output of the Hall-effect sensor exceeding the comparison threshold output.

Abstract: An electronic device incorporating a magnet and a Hall-effect sensor to determine a location of a portion of the electronic device. The electronic device comprises a magnet mechanically coupled to a first portion of the electronic device and a Hall-effect sensor coupled to a second portion of the electronic device where the first portion and the second portion are moveable with reference to each other and where the Hall-effect sensor receives a magnetic field of the magnet. The device further comprises an electronic stage that outputs a comparison threshold signal based on peak detecting an output of the Hall-effect sensor using a long term adjustment and resetting the long term adjustment to a current output of the Hall-effect sensor in response to a short term adjustment and a switch electronic stage that switches in response to the output of the Hall-effect sensor exceeding the comparison threshold output.

Abstract: A movement sensor comprises a multi-pole ring magnet, a semiconductor substrate, a first magnetic sensor formed on the semiconductor substrate, and a second magnetic sensor formed on the semiconductor substrate. The first magnetic sensor is configured to produce a first output signal in response to movement of the multi-pole ring magnet, and a centroid of the first and second magnetic sensors are separate and radially aligned on the semiconductor substrate relative to the multi-pole ring magnet. The second magnetic sensor is arranged at a predetermined angle with respect to the first magnetic sensor and is configured to produce a second output signal in response to the movement of the multi-pole ring magnet. The predetermined angle is between 0° and 90° exclusive and is configured to produce a difference in phase between the first and second output signals in response to the movement of the multi-pole ring magnet.

Abstract: Apparatus and associated methods may relate to Magneto-Resistive Sensing Devices (MRSDs). In accordance with an exemplary embodiment, an MRSD comprises an underlying semiconductor device and a magneto-resistive sensor. In some exemplary embodiments, the semiconductor device is processed through most of a standard process flow. After the standard process flow, in various embodiments, a planarization step may be performed to create a more planar top surface. In some embodiments, the magneto-resistive material, which may be made from a Nickel-Iron alloy, called Permalloy, is deposited on the planar surface. A layer of interconnect metallization also may reside in this top region. The magneto-resistive material may contact the topmost layer of metallization of the semiconductor device via contact openings in the planarized surface. In some embodiments, the magneto-resistive material may similarly contact the topmost layer of metallization through these contact openings.

Abstract: Apparatus and associated methods may relate to Magneto-Resistive Sensing Devices (MRSDs). In accordance with an exemplary embodiment, an MRSD comprises an underlying semiconductor device and a magneto-resistive sensor. In some exemplary embodiments, the semiconductor device is processed through most of a standard process flow. After the standard process flow, in various embodiments, a planarization step may be performed to create a more planar top surface. In some embodiments, the magneto-resistive material, which may be made from a Nickel-Iron alloy, called Permalloy, is deposited on the planar surface. A layer of interconnect metallization also may reside in this top region. The magneto-resistive material may contact the topmost layer of metallization of the semiconductor device via contact openings in the planarized surface. In some embodiments, the magneto-resistive material may similarly contact the topmost layer of metallization through these contact openings.

Abstract: This disclosure is directed to techniques for magnetic field angular position sensing. A device designed in accordance with this disclosure may include a magnetoresistive sensor configured to generate a signal indicative of an angular position of a magnetic field, the signal having an angular range of 180 degrees, a first polarity sensor configured to generate a signal indicative of a polarity of the magnetic field sensed from a first location, and a second polarity sensor configured to generate a signal indicative of a polarity of the magnetic field sensed from a second location different from the first location.

Abstract: Apparatus and associated methods may relate to Magneto-Resistive Sensing Devices (MRSDs). In accordance with an exemplary embodiment, an MRSD comprises an underlying semiconductor device and a magneto-resistive sensor. In some exemplary embodiments, the semiconductor device is processed through most of a standard process flow. After the standard process flow, in various embodiments, a planarization step may be performed to create a more planar top surface. In some embodiments, the magneto-resistive material, which may be made from a Nickel-Iron alloy, called Permalloy, is deposited on the planar surface. A layer of interconnect metallization also may reside in this top region. The magneto-resistive material may contact the topmost layer of metallization of the semiconductor device via contact openings in the planarized surface. In some embodiments, the magneto-resistive material may similarly contact the topmost layer of metallization through these contact openings.

Abstract: This disclosure is directed to techniques for decoding two or more signals that vary sinusoidally with respect to a parameter value to produce a decoded signal that varies linearly with respect to the parameter value. The techniques may include receiving a first signal and a second signal, the first signal varying with respect to a parameter value according to a first sinusoidal function having a period and a first phase, the second signal varying with respect to the parameter value according to a second sinusoidal function having the period and a second phase different from the first phase. The techniques may further include performing one or more arithmetic operations using the first signal, the second signal, and an offset value to generate a third signal that varies linearly with respect to the parameter value for at least one-half of the period of the first signal and the second signal.

Abstract: This disclosure is directed to techniques for decoding two or more signals that vary sinusoidally with respect to a parameter value to produce a decoded signal that varies linearly with respect to the parameter value. The techniques may include receiving a first signal and a second signal, the first signal varying with respect to a parameter value according to a first sinusoidal function having a period and a first phase, the second signal varying with respect to the parameter value according to a second sinusoidal function having the period and a second phase different from the first phase. The techniques may further include performing one or more arithmetic operations using the first signal, the second signal, and an offset value to generate a third signal that varies linearly with respect to the parameter value for at least one-half of the period of the first signal and the second signal.

Abstract: This disclosure is directed to techniques for magnetic field angular position sensing. A device designed in accordance with this disclosure may include a magnetoresistive sensor configured to generate a signal indicative of an angular position of a magnetic field, the signal having an angular range of 180 degrees, a first polarity sensor configured to generate a signal indicative of a polarity of the magnetic field sensed from a first location, and a second polarity sensor configured to generate a signal indicative of a polarity of the magnetic field sensed from a second location different from the first location.

Abstract: A low dropout voltage regulator apparatus is disclosed, which includes a low dropout voltage regulator circuit connected to a supply voltage, wherein at least one input voltage is input to the low dropout voltage regulator circuit to generate at least one output voltage from the low dropout voltage regulator circuit. A feedback compensation component is also provided, which is integrated with the low dropout voltage regulator circuit. The feedback compensation component is located generally within the low dropout voltage regulator circuit to take advantage of a Miller effect associated with the low dropout voltage regulator circuit in order to withstand high voltages associated with the supply voltage and generate the output voltage from the low dropout voltage regulator circuit.

Abstract: A magnetic sensing apparatus includes a first magnetic transducer separated spatially from a second magnetic transducer and proximate to a target and a direction decoding circuit associated with the first and second magnetic transducers, wherein the direction decoding circuit produces output pulses that provide data indicative of a rotation of the target while rejecting rotational vibration signals associated with the target during a rotational detection of the target utilizing the first and second magnetic transducers without producing erroneous output pulses or missing an excessive number of the output pulses during speed and rotational detection operations thereof.

Abstract: A voltage regulator operable as a voltage follower while a fusible link is closed and in a regulated voltage mode when the fusible link becomes open. The voltage regulator can be formed on monolithic semiconductor chips. Patterned thin films including aluminum and nickel-iron, and aluminum and polycrystalline silicon, comprise the fusible link. With the fusible link closed, the voltage regulator output is an analog of positive polarity variable voltage levels at the regulator input. Systems powered by the voltage regulator are allowed to be programmed until system programming requiring variable voltage levels is complete. Afterwards, a negative polarity voltage is applied to the regulator input causing a large current to pass through the fusible link once the system programming is completed. Current thereby causes the fusible link to become opened and enables the voltage regulator to begin operating at a regulated voltage in response to positive voltage input.

Abstract: A permalloy sensor having high sensitivity is presented A substrate and a sensor has a first surface having a wafer level anisotropy in a given direction. A permalloy resistor pattern of individual runners is deposited on the surface such that the mechanical length of each of said individual runners is perpendicular to the wafer level anisotropy to cause the sensor to have an anisotropy of about 90°. The permalloy is deposited as a thin film and a silicon wafer is the preferred substrate.

Abstract: Two bridge type transducers are coupled in series with their outputs each driving one of a pair of differential amplifiers, with the outputs tied together in a push-pull configuration. In further embodiments, push-pull operation is obtained by matching amplifier gain components and using current mirrors. Lower voltage operation may be achieved by simple diode level shifting of the transducer outputs. In one embodiment, the transducers comprise Hall effect sensors.

Abstract: A magnetic sensor is disclosed in which a ferromagnetic runner (e.g., a permalloy runner) can be located relative to a target. A coil structure is generally wound about the ferromagnetic runner, such that when a magnetic field changes direction along an axial length of the ferromagnetic runner, a voltage is induced in the coil structure that is proportional to a time range of change of a magnetic flux density, due to the sudden internal magnetization reversal of the runner. Additionally, an interfacing circuit can be provided in which the ferromagnetic runner and the coil structure are integrated with the interfacing circuit to thereby produce a magnetic sensor for magnetically sensing the target. The magnetic sensor is highly sensitive and can operate without electrical current or upon a negligible electrical current.