Abstract: In one aspect, a transducer body, includes a support including a pair of clevis halves; and a sensor body coupled to each of the clevis halves. The sensor body is disposed between the clevis halves and includes a generally rigid peripheral member disposed about a spaced-apart central hub, the central hub being joined to each of the clevis halves with the peripheral member spaced apart from each clevis half, where at least three flexure components couple the peripheral member to the central hub, and where the flexure components are spaced-apart from each other at generally equal angle intervals about the central hub. A biasing assembly connected between the support and the sensor body is configured to provide a bias force between the sensor body and the support.

Abstract: In one aspect, a transducer body includes a support having clevis halves. The sensor body includes a generally rigid peripheral member disposed about a spaced-apart central hub joined to each of the clevis halves. At least three flexure components couple the peripheral member to the hub. The flexure components are spaced-apart from each other at generally equal angle intervals about the hub; the sensor body further including a flexure assembly for some flexure components joining the flexure component to at least one of the hub and the peripheral member, the flexure assembly being compliant for forces in a radial direction from the hub to the peripheral member. Each flexure assembly is configured such that forces transferred concentrate strain at a midpoint along the length of each corresponding flexure component.

Abstract: In one aspect, a transducer body, includes a support including a pair of clevis halves; and a sensor body coupled to each of the clevis halves. The sensor body is disposed between the clevis halves and includes a generally rigid peripheral member disposed about a spaced-apart central hub, the central hub being joined to each of the clevis halves with the peripheral member spaced apart from each clevis half, where at least three flexure components couple the peripheral member to the central hub, and where the flexure components are spaced-apart from each other at generally equal angle intervals about the central hub. A biasing assembly connected between the support and the sensor body is configured to provide a bias force between the sensor body and the support.

Abstract: In one aspect, a platform balance includes a frame support, and at least three spaced-apart transducer bodies coupled to the frame support. Each transducer body includes a support having clevis halves. The sensor body includes a generally rigid peripheral member disposed about a spaced-apart central hub joined to each of the clevis halves. At least three flexure components couple the peripheral member to the hub. The flexure components are spaced-apart from each other at generally equal angle intervals about the hub; the sensor body further including a flexure assembly for some flexure components joining the flexure component to at least one of the hub and the peripheral member, the flexure assembly being compliant for forces in a radial direction from the hub to the peripheral member. Each flexure assembly is configured such that forces transferred concentrate strain at a midpoint along the length of each corresponding flexure component.

Abstract: In one aspect, a transducer body includes a support having clevis halves. The sensor body includes a generally rigid peripheral member disposed about a spaced-apart central hub joined to each of the clevis halves. At least three flexure components couple the peripheral member to the hub. The flexure components are spaced-apart from each other at generally equal angle intervals about the hub; the sensor body further including a flexure assembly for some flexure components joining the flexure component to at least one of the hub and the peripheral member, the flexure assembly being compliant for forces in a radial direction from the hub to the peripheral member. Each flexure assembly is configured such that forces transferred concentrate strain at a midpoint along the length of each corresponding flexure component.

Abstract: A test assembly structure having a first specimen support, a displacement mechanism joined to the first specimen support and a second specimen support. A loading assembly is joined to the second specimen support and configured so as to engage a specimen held by the second specimen support with a specimen held by the first specimen support. A self-reacting structure is joined to the loading assembly having a flexure substantially rigid in the direction of loading of the loading assembly and substantially compliant in the direction of displacement of the displacement mechanism. A second flexure can be configured to support the second specimen support and/or loading assembly on a base. The second flexure is substantially compliant in the direction of loading of the loading assembly and substantially rigid in the direction of displacement of the displacement mechanism.

Abstract: A method processes a thick TiW metal layer (12) on a dielectric layer (15), where the dielectric layer (15) has been deposited on a substrate (14), such as a silicon substrate. The method deposits the TiW metal layer (12) onto the dielectric layer (15), such as silicon dioxide or silicon nitride, and then deposits a photoresist (10) over the TiW metal layer (12). The method removes substantially all of the TiW metal layer (12) not in contact with the photoresist (10) with a uniform etch, such as not more than 80% to 90% of the deposited TiW metal layer. Then, the TiW metal layer (12) is selectively etched to the dielectric layer (15), to remove the TiW metal layer (12) faster than the dielectric layer (15), such as 2.7 times faster.

Abstract: A method processes a thick TiW metal layer (12) on a dielectric layer (15), where the dielectric layer (15) has been deposited on a substrate (14), such as a silicon substrate. The method deposits the TiW metal layer (12) onto the dielectric layer (15), such as silicon dioxide or silicon nitride, and then deposits a photoresist (10) over the TiW metal layer (12). The method removes substantially all of the TiW metal layer (12) not in contact with the photoresist (10) with a uniform etch, such as not more than 80% to 90% of the deposited TiW metal layer. Then, the TiW metal layer (12) is selectively etched to the dielectric layer (15), to remove the TiW metal layer (12) faster than the dielectric layer (15), such as 2.7 times faster.