Patents by Inventor Jason D Slinker

Jason D Slinker has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240341111
    Abstract: Systems and methods for an active emissive layer configured for use in an electroluminescent device. The active emissive layer includes a host-guest blend in which the host includes a perovskite (e.g., CsPbBr3, CsPbCl3, and/or CsPbI3) and the guest includes quantum shells (QSs) embedded in the host. The QSs include a quantum-confined, spheroidal shell that is a first semiconductor (e.g., CdSe) sandwiched between a core and an outer layer that are a wider band gap semiconductor (e.g., CdS). The active emissive layer is formed by mixing a perovskite solution with a colloid to generate a blended mixture, where the colloid is the QSs suspended in a same solvent used for the perovskite solution. The perovskite solution is coated on a substrate to form a film that is then annealed, and electrodes are formed to flow a current through the active emissive layer, causing emitted light.
    Type: Application
    Filed: April 10, 2024
    Publication date: October 10, 2024
    Applicant: BOARD OF REGENTS, THE UNIVERSITY OF TEXAS SYSTEM
    Inventors: Jason D. Slinker, Aditya Kumar Mishra, Anton V. Malko
  • Publication number: 20230171982
    Abstract: Active emissive layers (e.g., of a light-emitting electrochemical cell (LEC)) are provided and can comprise zero-dimensional (0D) perovskite material in combination with a three-dimensional (3D) perovskite material, as well as electroluminescent devices (e.g., LECs) utilizing such active emissive layers and methods of fabricating and using such active emissive layers and electroluminescent devices. The 0D perovskite material can be incorporated into a matrix film of the 3D perovskite material. The 0D perovskite material can be, for example, perovskite nanocrystals (PNCs). The 0D perovskite material can be, for example, Cs4PbBr6, and the 3D perovskite material can be, for example, CsPbBr3.
    Type: Application
    Filed: November 28, 2022
    Publication date: June 1, 2023
    Inventors: Jason D. Slinker, Aditya Kumar Mishra, Riya Bose, Anton Malko
  • Publication number: 20140291590
    Abstract: Embodiments of the invention are directed to single layer light-emitting electrochemical cells that are enhanced by ionic additives, and methods of manufacture. These devices exhibit high efficiency, rapid response and long lifetimes.
    Type: Application
    Filed: March 28, 2014
    Publication date: October 2, 2014
    Applicant: The Board of Regents of the University of Texas System
    Inventors: Jason D. Slinker, Shen Yulong, Bradley J. Holliday
  • Patent number: 8541940
    Abstract: The invention teaches electrospun light-emitting fibers made from ionic transition metal complexes (“iTMCs”) such as [Ru(bpy)3]2+(PF6?)2]/PEO mixtures with dimensions in the 10.0 nm to 5.0 micron range and capable of highly localized light emission at low operating voltages such as 3-4 V with turn-on voltages approaching the band-gap limit of the organic semiconductor that may be used as point source light emitters on a chip.
    Type: Grant
    Filed: December 27, 2011
    Date of Patent: September 24, 2013
    Assignee: Cornell University
    Inventors: Jose M. Moran-Mirabal, Harold G. Craighead, George G. Malliaras, Héctor D. Abruna, Jason D. Slinker
  • Publication number: 20120097832
    Abstract: The invention teaches electrospun light-emitting fibers made from ionic transition metal complexes (‘iTMCs”) such as [Ru(bpy)3]2+(PF6?)2]/PEO mixtures with dimensions in the 10.0 nm to 5.0 micron range and capable of highly localized light emission at low operating voltages such as 3-4 V with turn-on voltages approaching the band-gap limit of the organic semiconductor that may be used as point source light emitters on a chip.
    Type: Application
    Filed: December 27, 2011
    Publication date: April 26, 2012
    Applicant: CORNELL UNIVERSITY
    Inventors: Jose M. Moran-Mirabal, Harold G. Craighead, George G. Malliaras, Hector D. Abruna, Jason D. Slinker
  • Patent number: 8106580
    Abstract: The invention teaches electrospun light-emitting fibers made from ionic transition metal complexes (“iTMCs”) such as [Ru(bpy)3]2+(PF6.)2]/PEO mixtures with dimensions in the 10.0 nm to 5.0 micron range and capable of highly localized light emission at low operating voltages such as 3-4 V with turn-on voltages approaching the band-gap limit of the organic semiconductor that may be used as point source light emitters on a chip.
    Type: Grant
    Filed: September 18, 2008
    Date of Patent: January 31, 2012
    Assignee: Cornell University
    Inventors: Jose M. Moran-Mirabal, Harold G. Craighead, George G. Malliaras, Hector D. Abruna, Jason D. Slinker
  • Patent number: 8063556
    Abstract: A cascaded light emitting device. The cascaded light emitting device includes: a base electrode formed of a base electrode material and electrically coupled to a base voltage lead; a top electrode layer formed of a top electrode material and electrically coupled to a top voltage lead; a number of electroluminescent layers arranged between and electrically coupled to the base electrode and top electrode layer; and at least one middle electrode layer formed of a middle electrode material. Each of the middle electrodes is coupled between two juxtaposed electroluminescent layers. The electroluminescent layers include a mixed conductor that luminesces with a peak wavelength.
    Type: Grant
    Filed: January 22, 2010
    Date of Patent: November 22, 2011
    Assignees: Panasonic Corporation, Cornell Research Foundation, Inc.
    Inventors: George G. Malliaras, Kiyotaka Mori, Jason D. Slinker, Daniel A. Bernards, Hector D. Abruna
  • Patent number: 7755275
    Abstract: A cascaded light emitting device. The cascaded light emitting device includes: a base electrode formed of a base electrode material and electrically coupled to a base voltage lead; a top electrode layer formed of a top electrode material and electrically coupled to a top voltage lead; a number of electroluminescent layers arranged between and electrically coupled to the base electrode and top electrode layer; and at least one middle electrode layer formed of a middle electrode material. Each of the middle electrodes is coupled between two juxtaposed electroluminescent layers. The electroluminescent layers include a mixed conductor that luminesces with a peak wavelength.
    Type: Grant
    Filed: March 28, 2005
    Date of Patent: July 13, 2010
    Assignees: Panasonic Corporation, Cornell University
    Inventors: George G. Malliaras, Kiyotaka Mori, Jason D Slinker, Daniel A. Bernards, Hector D. Abruna
  • Publication number: 20100117518
    Abstract: A cascaded light emitting device. The cascaded light emitting device includes: a base electrode formed of a base electrode material and electrically coupled to a base voltage lead; a top electrode layer formed of a top electrode material and electrically coupled to a top voltage lead; a number of electroluminescent layers arranged between and electrically coupled to the base electrode and top electrode layer; and at least one middle electrode layer formed of a middle electrode material. Each of the middle electrodes is coupled between two juxtaposed electroluminescent layers. The electroluminescent layers include a mixed conductor that luminesces with a peak wavelength.
    Type: Application
    Filed: January 22, 2010
    Publication date: May 13, 2010
    Applicants: Cornell Research Foundation, Inc., Matsushita Electric Industrial Co., Ltd.
    Inventors: George M. Malliaras, Kiyotaka Mori, Jason D. Slinker, Daniel A. Bernards, Hector D. Abruna
  • Publication number: 20090072728
    Abstract: The invention teaches electrospun light-emitting fibers made from ionic transition metal complexes (“iTMCs”) such as [Ru(bpy)3]2+(PF6.)2]/PEO mixtures with dimensions in the 10.0 nm to 5.0 micron range and capable of highly localized light emission at low operating voltages such as 3-4 V with turn-on voltages approaching the band-gap limit of the organic semiconductor that may be used as point source light emitters on a chip.
    Type: Application
    Filed: September 18, 2008
    Publication date: March 19, 2009
    Applicant: Cornell University
    Inventors: Jose M. Moran-Mirabal, Harold G. Craighead, George G. Malliaras, Hector D. Abruna, Jason D. Slinker