Abstract: Methods and apparatus for detecting the presence or absence of unwanted metal deposits on a substrate holder of an electroplating apparatus are described herein. In various embodiments, a plating sensor is used to detect unwanted metal deposits. The plating sensor may be mounted relatively far away from the area that it measures (e.g., the sensor target area). For instance, the plating sensor may be on one side of the electroplating apparatus (in some cases mounted on a drip shield), and the sensor target area may be on the opposite side of the electroplating apparatus. In this way, the plating sensor can measure across the electroplating apparatus. This placement provides a relatively deep depth of focus for the plating sensor, and provides some physical separation between the plating sensor and the electroplating chemistry. Both of these factors lead to more reliable detection results.

Abstract: Methods and apparatus for detecting the presence or absence of unwanted metal deposits on a substrate holder of an electroplating apparatus are described herein. In various embodiments, a plating sensor is used to detect unwanted metal deposits. The plating sensor may be mounted relatively far away from the area that it measures (e.g., the sensor target area). For instance, the plating sensor may be on one side of the electroplating apparatus (in some cases mounted on a drip shield), and the sensor target area may be on the opposite side of the electroplating apparatus. In this way, the plating sensor can measure across the electroplating apparatus. This placement provides a relatively deep depth of focus for the plating sensor, and provides some physical separation between the plating sensor and the electroplating chemistry. Both of these factors lead to more reliable detection results.

Abstract: An apparatus for conditioning deionized water and delivering it to a semiconductor wafer in a post electrofill module includes a degassing station configured to remove dissolved gas from the deionized water flow, a heating station configured to heat the deionized water flow, and a nozzle configured to deliver the deionized water flow to the wafer. The heating and degassing are performed before the delivery of the deionized water flow to the wafer. In some implementations the degassing station includes a contact degasser or an inert gas bubbler, and the heating station is configured to heating the deionized water flow to a temperature of between about 35-40° C. In some embodiments the deionized water flow is passed through the degassing station before being passed through the heating station.