Patents by Inventor Jason E. Nobles

Jason E. Nobles has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • FERROELECTRIC SEMICONDUCTING FLOATING GATE FIELD-EFFECT TRANSISTOR
    Publication number: 20220199631
    Abstract: Non-volatile memory devices utilizing polarizable ferroelectric-semiconductor materials as the floating gate in floating-gate field-effect metal oxide transistors are described. Such materials can be annealed at temperatures less than 450° C., and fields below about 250 kV/cm can be used for changing polarization of the ferroelectric semiconductor materials, leading to devices capable of high endurance (>1010 cycles).
    Type: Application
    Filed: December 21, 2021
    Publication date: June 23, 2022
    Applicant: Advanced Nanoscale Devices
    Inventors: Carlos A. Paz de Araujo, Jolanta B. Celinska, Christopher R. McWilliams, Jason E. Nobles