Abstract: Mechanisms to mitigate signal race conditions in circuits that utilize multiple voltage domains. The mechanisms are applicable in signal fanout scenarios where leakage becomes problematic to signal timing, such machine memory devices, e.g., volatile single port or multi-port memory devices such as SRAMs (volatile static random access memory) or other bit-storing cell arrangements that include memory cells and a hierarchical bitline structure including local bitlines for subsets of the memory banks and a global bitline spanning the subsets.

Abstract: The disclosure provides improvements for transmitting data between different voltage domains of an IC, such as a chip. The disclosure introduces a data transfer circuit that uses a multi-voltage RAM, referred to herein as MVRAM, for transmitting data across the different voltage domains. The MVRAM has multiple memory cells with write ports and read ports on different clock and voltage domains. Accordingly, a write operation can occur completely on the write domain voltage and the read operation can occur completely on the read domain voltage. In one example, the data transfer circuit includes: (1) write logic operating at a first operating voltage, (2) read logic operating at second operating voltage, and (3) a MVRAM with write ports that operate under the first operating voltage and read ports that operate under the second operating voltage.

Abstract: Multi-ported memories that include write peripheral logic configured to operate in a first voltage domain, read peripheral logic configured to operate in a second voltage domain, and at least one bit cell array, wherein the write peripheral logic and the read peripheral logic are disposed on opposite sides of the bit cell array and voltage domain crossings between the first voltage domain and the second voltage domain are localized in bit cells of the at least one bit cell array.

Abstract: A dual-domain dynamic multiplexer and a method of transitioning between asynchronous voltage and frequency domains. One embodiment of the dual-domain dynamic multiplexer includes: (1) a first domain having a first voltage and a first clock, and a second domain having a second voltage and a second clock, (2) a plurality of data and data select input pairs wherein a data input of an input pair is in the first domain and a data select input of an input pair is in the second domain, and (3) a pre-charge stage in the second domain that is energized upon an edge of the second clock, whereby one data and data input pair is enabled and data latched in the second domain upon another edge of the second clock.

Abstract: A system including a configurable memory controller, a memory interface, and a configurable high speed communications fabric comprising a plurality of interconnect stations arranged in an array and operable to implement a plurality of pipelined buses, where the configurable memory controller is operably coupled to the configurable high speed communications fabric using a first interconnect station of the plurality of interconnect stations, where the memory interface is operably coupled to the configurable high speed communications fabric using a second interconnect station of the plurality of interconnect stations, where the plurality of interconnect stations are configured to satisfy a timing requirement of the memory interface, and where the configurable memory controller, the memory interface, and the configurable high speed communications fabric are associated with a configurable integrated circuit.

Abstract: A system including a configurable memory controller, a memory interface, and a configurable high speed communications fabric comprising a plurality of interconnect stations arranged in an array and operable to implement a plurality of pipelined buses, where the configurable memory controller is operably coupled to the configurable high speed communications fabric using a first interconnect station of the plurality of interconnect stations, where the memory interface is operably coupled to the configurable high speed communications fabric using a second interconnect station of the plurality of interconnect stations, where the plurality of interconnect stations are configured to satisfy a timing requirement of the memory interface, and where the configurable memory controller, the memory interface, and the configurable high speed communications fabric are associated with a configurable integrated circuit.

Abstract: A subsystem configured to select the power supply to a static random access memory cell compares the level of a dedicated memory supply voltage to the primary system supply voltage. The subsystem then switches the primary system supply to the SRAM cell when the system voltage is higher than the memory supply voltage with some margin. When the system voltage is lower than the memory supply voltage, with margin, the subsystem switches the memory supply to the SRAM cell. When the system voltage is comparable to the memory supply, the subsystem switches the system voltage to the SRAM cell if performance is a prioritized consideration, but switches the memory supply to the SRAM cell if power reduction is a prioritized consideration. In this manner, the system achieves optimum performance without incurring steady state power losses and avoids timing issues in accessing memory.

Abstract: A subsystem configured to select the power supply to a static random access memory cell compares the level of a dedicated memory supply voltage to the primary system supply voltage. The subsystem then switches the primary system supply to the SRAM cell when the system voltage is higher than the memory supply voltage with some margin. When the system voltage is lower than the memory supply voltage, with margin, the subsystem switches the memory supply to the SRAM cell. When the system voltage is comparable to the memory supply, the subsystem switches the system voltage to the SRAM cell if performance is a prioritized consideration, but switches the memory supply to the SRAM cell if power reduction is a prioritized consideration. In this manner, the system achieves optimum performance without incurring steady state power losses and avoids timing issues in accessing memory.

Abstract: A system including a configurable memory controller, a memory interface, and a configurable high speed communications fabric comprising a plurality of interconnect stations arranged in an array and operable to implement a plurality of pipelined buses, where the configurable memory controller is operably coupled to the configurable high speed communications fabric using a first interconnect station of the plurality of interconnect stations, where the memory interface is operably coupled to the configurable high speed communications fabric using a second interconnect station of the plurality of interconnect stations, where the plurality of interconnect stations are configured to satisfy a timing requirement of the memory interface, and where the configurable memory controller, the memory interface, and the configurable high speed communications fabric are associated with a configurable integrated circuit.

Abstract: A system including a configurable memory controller, a memory interface, and a configurable high speed communications fabric comprising a plurality of interconnect stations arranged in an array and operable to implement a plurality of pipelined buses, where the configurable memory controller is operably coupled to the configurable high speed communications fabric using a first interconnect station of the plurality of interconnect stations, where the memory interface is operably coupled to the configurable high speed communications fabric using a second interconnect station of the plurality of interconnect stations, where the plurality of interconnect stations are configured to satisfy a timing requirement of the memory interface, and where the configurable memory controller, the memory interface, and the configurable high speed communications fabric are associated with a configurable integrated circuit.

Abstract: A dual-domain dynamic multiplexer and a method of transitioning between asynchronous voltage and frequency domains. One embodiment of the dual-domain dynamic multiplexer includes: (1) a first domain having a first voltage and a first clock, and a second domain having a second voltage and a second clock, (2) a plurality of data and data select input pairs wherein a data input of an input pair is in the first domain and a data select input of an input pair is in the second domain, and (3) a pre-charge stage in the second domain that is energized upon an edge of the second clock, whereby one data and data input pair is enabled and data latched in the second domain upon another edge of the second clock.

Abstract: A system for general purpose input-output (IO), including a first pad; an IO buffer comprising the first pad; and an IO datapath logic block operatively connected to the IO buffer, where the IO datapath logic block and the IO buffer are associated with a general purpose IO block in a heterogeneous configurable integrated circuit (HCIC).

Abstract: A system including a plurality of programmable logic blocks, a plurality of special-purpose blocks, and a configurable high-speed mesh interconnect fabric operatively connecting the plurality of programmable logic blocks and the plurality of special-purpose blocks, where the configurable high-speed mesh interconnect fabric is configured to implement a plurality of interconnect pipeline buses spanning across the system.

Abstract: A system including a configurable memory controller, a memory interface, and a configurable high speed communications fabric comprising a plurality of interconnect stations arranged in an array and operable to implement a plurality of pipelined buses, where the configurable memory controller is operably coupled to the configurable high speed communications fabric using a first interconnect station of the plurality of interconnect stations, where the memory interface is operably coupled to the configurable high speed communications fabric using a second interconnect station of the plurality of interconnect stations, where the plurality of interconnect stations are configured to satisfy a timing requirement of the memory interface, and where the configurable memory controller, the memory interface, and the configurable high speed communications fabric are associated with a configurable integrated circuit.

Abstract: A system including a plurality of programmable logic blocks, a plurality of special-purpose blocks, and a configurable high-speed mesh interconnect fabric operatively connecting the plurality of programmable logic blocks and the plurality of special-purpose blocks, where the configurable high-speed mesh interconnect fabric is configured to implement a plurality of interconnect pipeline buses spanning across the system.

Abstract: A system for general purpose input-output (IO), including a first pad; an IO buffer comprising the first pad; and an IO datapath logic block operatively connected to the IO buffer, where the IO datapath logic block and the IO buffer are associated with a general purpose IO block in a heterogeneous configurable integrated circuit (HCIC).

Abstract: Methods and apparatus for programming a phase change device (PCD) to a low resistance state. According to an exemplary method, one or more first programming pulses having a predetermined magnitude and/or duration are applied to a PCD. After each programming pulse is applied, the programmed resistance of the PCD is compared to a target resistance specification. If the programmed resistance is not in accordance with the target resistance specification, one or more second programming pulses having a magnitude and/or duration different than the magnitude and/or duration of the one or more first programming pulses are applied to the PCD. This process is repeated until the programmed resistance of the PCD satisfies the target resistance specification or it is determined that the PCD cannot be programmed to a resistance value that satisfies the target resistance specification.