Abstract: A device, apparatus and method for trapping metal ions and detecting metal ion contamination in a solution provide a semiconductor device formed on a semiconductor substrate and including an N-well formed over a P-type substrate and at least a contact portion of the N-well in electrical contact with the solution. When the semiconductor device is optically illuminated, a P/N junction is formed as a result of photovoltaic phenomena. Metal ions from the solution migrate to the contact area due to the voltage created at the P/N junction. The semiconductor device includes a conductive structure with conductive features separated by a gap and therefore in an initially electrically open state. When the ions migrate to the contact area, they precipitate, at least partially bridging the gap and creating conductance through the conductive structure. The conductance may be measured to determine the amount of metal ion contamination.

Abstract: A hand-held controller includes a handle extending in a longitudinal direction. The handle is shaped and dimensioned to be grasped by a hand of a user. A ring is attached to an end of the handle and surrounds a thumb of the user when the handle is grasped by the hand of the user. The ring has an annular surface defining a plane that forms a predetermined angle with respect to the longitudinal direction. The ring also has a curved outer surface. A sensor is embedded within the ring or mounted on a side surface of the handle to detect whether the hand of the user grasping the handle is a right hand of the user or a left hand of the user.

Abstract: A haptic skull cap provides different types of haptic feedback to a user, which can be advantageous for providing a more immersive virtual reality experience. The haptic skull cap includes a fabric cap worn by a user. Physically attached to the fabric cap is a linear actuator that provides a focal impact to a user's forehead. Additionally, vibrational motors are physically attached to the fabric cap, where each vibration motor provides vibrational feedback to a different location of the user's head. The haptic skull cap can be worn by a user in conjunction with a head mounted display. Therefore, each type of haptic feedback provided by the haptic skull cap can be synchronized with the visual data stream provided by the head mounted display which further enhances the overall virtual reality experience for a user.

Abstract: A hand-held controller includes a handle extending in a longitudinal direction. The handle is shaped and dimensioned to be grasped by a hand of a user. A ring is attached to an end of the handle and surrounds a thumb of the user when the handle is grasped by the hand of the user. The ring has an annular surface defining a plane that forms a predetermined angle with respect to the longitudinal direction. The ring also has a curved outer surface. A sensor is embedded within the ring or mounted on a side surface of the handle to detect whether the hand of the user grasping the handle is a right hand of the user or a left hand of the user.

Abstract: A system maps a user's interaction with a game controller to predefined hand positions that can be used in gaming and multimedia applications. A game controller with sensors receives user input with capacitive sensors and generates sensor outputs. A controller modeling module receives the sensor outputs and trains a model based on the outputs. The trained kinematic model maps the sensor outputs to one or more of a plurality of predefined hand positions. When an application requests the status of a user's hand position, e.g., through an API, the mapped hand position is sent to the application.

Abstract: A device, apparatus and method for trapping metal ions and detecting metal ion contamination in a solution provide a semiconductor device formed on a semiconductor substrate and including an N-well formed over a P-type substrate and at least a contact portion of the N-well in electrical contact with the solution. When the semiconductor device is optically illuminated, a P/N junction is formed as a result of photovoltaic phenomena. Metal ions from the solution migrate to the contact area due to the voltage created at the P/N junction. The semiconductor device includes a conductive structure with conductive features separated by a gap and therefore in an initially electrically open state. When the ions migrate to the contact area, they precipitate, at least partially bridging the gap and creating conductance through the conductive structure. The conductance may be measured to determine the amount of metal ion contamination.

Abstract: A device, apparatus and method for trapping metal ions and detecting metal ion contamination in a solution provide a semiconductor device formed on a semiconductor substrate and including an N-well formed over a P-type substrate and at least a contact portion of the N-well in electrical contact with the solution. When the semiconductor device is optically illuminated, a P/N junction is formed as a result of photovoltaic phenomena. Metal ions from the solution migrate to the contact area due to the voltage created at the P/N junction. The semiconductor device includes a conductive structure with conductive features separated by a gap and therefore in an initially electrically open state. When the ions migrate to the contact area, they precipitate, at least partially bridging the gap and creating conductance through the conductive structure. The conductance may be measured to determine the amount of metal ion contamination.

Abstract: A device, apparatus and method for trapping metal ions and detecting metal ion contamination in a solution provide a semiconductor device formed on a semiconductor substrate and including an N-well formed over a P-type substrate and at least a contact portion of the N-well in electrical contact with the solution. When the semiconductor device is optically illuminated, a P/N junction is formed as a result of photovoltaic phenomena. Metal ions from the solution migrate to the contact area due to the voltage created at the P/N junction. The semiconductor device includes a conductive structure with conductive features separated by a gap and therefore in an initially electrically open state. When the ions migrate to the contact area, they precipitate, at least partially bridging the gap and creating conductance through the conductive structure. The conductance may be measured to determine the amount of metal ion contamination.

Abstract: A device, apparatus and method for trapping metal ions and detecting metal ion contamination in a solution provide a semiconductor device formed on a semiconductor substrate and including an N-well formed over a P-type substrate and at least a contact portion of the N-well in electrical contact with the solution. When the semiconductor device is optically illuminated, a P/N junction is formed as a result of photovoltaic phenomena. Metal ions from the solution migrate to the contact area due to the voltage created at the P/N junction. The semiconductor device includes a conductive structure with conductive features separated by a gap and therefore in an initially electrically open state. When the ions migrate to the contact area, they precipitate, at least partially bridging the gap and creating conductance through the conductive structure. The conductance may be measured to determine the amount of metal ion contamination.