Patents by Inventor Jason (Jianhai) Qi

Jason (Jianhai) Qi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Stacked trench metal-oxide-semiconductor field effect transistor device
    Patent number: 8183629
    Abstract: Embodiments of the present invention are directed toward a trench metal-oxide-semiconductor field effect transistor (TMOSFET) device. The TMOSFET device includes a source-side-gate TMOSFET coupled to a drain-side-gate TMOSFET 1203. A switching node metal layer couples the drain of the source-side-gate TMOSFET to the source of the drain-side-gate TMOSFET so that the TMOSFETs are packaged as a stacked or lateral device.
    Type: Grant
    Filed: March 18, 2008
    Date of Patent: May 22, 2012
    Assignee: Vishay-Siliconix
    Inventors: Deva Pattanayak, Jason (Jianhai) Qi, Yuming Bai, Kam-Hong Lui, Ronald Wong
  • Stacked Trench Metal-Oxide-Semiconductor Field Effect Transistor Device
    Publication number: 20090050960
    Abstract: Embodiments of the present invention are directed toward a trench metal-oxide-semiconductor field effect transistor (TMOSFET) device. The TMOSFET device includes a source-side-gate TMOSFET coupled to a drain-side-gate TMOSFET 1203. A switching node metal layer couples the drain of the source-side-gate TMOSFET to the source of the drain-side-gate TMOSFET so that the TMOSFETs are packaged as a stacked or lateral device.
    Type: Application
    Filed: March 18, 2008
    Publication date: February 26, 2009
    Applicant: VISHAY-SILICONIX
    Inventors: Deva Pattanayak, Jason (Jianhai) Qi, Yuming Bai, Kam-Hong Lui, Ronald Wong
  • Method of manufacturing a drain side gate trench metal-oxide-semiconductor field effect transistor
    Patent number: 7344945
    Abstract: Embodiments of the present invention provide a striped or closed cell trench metal-oxide-semiconductor field effect transistor (TMOSFET). The striped or closed cell TMOSFET comprises a source region, a body region disposed above the source region, a drift region disposed above the body region, a drain region disposed above the drift region. A gate region is disposed above the source region and adjacent the body region. A gate insulator region electrically isolates the gate region from the source region, body region, drift region and drain region. The body region is electrically coupled to the source region.
    Type: Grant
    Filed: December 22, 2004
    Date of Patent: March 18, 2008
    Assignee: Vishay-Siliconix
    Inventors: Deva Pattanayak, Jason (Jianhai) Qi, Yuming Bai, Kam-Hong Lui, Ronald Wong
  • Drain side gate trench metal-oxide-semiconductor field effect transistor
    Patent number: 6906380
    Abstract: Embodiments of the present invention provide a striped or closed cell trench metal-oxide-semiconductor field effect transistor (TMOSFET). The striped or closed cell TMOSFET comprises a source region, a body region disposed above the source region, a drift region disposed above the body region, a drain region disposed above the drift region. A gate region is disposed above the source region and adjacent the body region. A gate insulator region electrically isolates the gate region from the source region, body region, drift region and drain region. The body region is electrically coupled to the source region.
    Type: Grant
    Filed: May 13, 2004
    Date of Patent: June 14, 2005
    Assignee: Vishay-Siliconix
    Inventors: Deva Pattanayak, Jason (Jianhai) Qi, Yuming Bai, Kam-Hong Lui, Ronald Wong