Patents by Inventor Jason Keleher
Jason Keleher has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8435421Abstract: The present invention provides chemical-mechanical polishing (CMP) compositions and methods for polishing copper- and/or silver-containing substrates. The compositions of the present invention comprise a particulate abrasive, a primary film-forming metal-complexing agent, and a secondary film-forming metal-passivating agent in an aqueous carrier. Methods of polishing a substrate with the compositions of the invention are also disclosed.Type: GrantFiled: January 11, 2011Date of Patent: May 7, 2013Assignee: Cabot Microelectronics CorporationInventors: Jason Keleher, Pankaj Singh, Vlasta Brusic
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Publication number: 20110247996Abstract: The inventive polishing composition comprises an abrasive, an aqueous medium, a surfactant in an amount above its critical micelle concentration, and a hydrophobic surface active compound. The invention also provides a method of using a polishing composition.Type: ApplicationFiled: June 23, 2011Publication date: October 13, 2011Applicant: CABOT MICROELECTRONICS CORPORATIONInventors: Francesco De Rege Thesauro, Jason Keleher
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Patent number: 7955520Abstract: The present invention provides chemical-mechanical polishing (CMP) methods and compositions for polishing copper-containing substrates. The methods of the present invention entail abrading a surface of a copper-containing substrate with a CMP composition of the invention, preferably in the presence of an oxidizing agent (e.g., hydrogen peroxide). The CMP compositions of the invention comprise a particulate abrasive, a copper-complexing agent, a copper-passivating agent bearing an acidic OH group and an additional oxygen substituent in a 1,6 relationship to the acidic OH group, and an aqueous carrier. A preferred composition of the invention comprises about 0.01 to about 1 percent by weight of the particulate abrasive, about 0.1 to about 1 percent by weight of the copper-complexing agent, about 10 to about 1000 ppm of the copper-passivating agent.Type: GrantFiled: November 27, 2007Date of Patent: June 7, 2011Assignee: Cabot Microelectronics CorporationInventors: Daniela White, Jason Keleher, John Parker
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Publication number: 20110100956Abstract: The present invention provides chemical-mechanical polishing (CMP) compositions and methods for polishing copper- and/or silver-containing substrates. The compositions of the present invention comprise a particulate abrasive, a primary film-forming metal-complexing agent, and a secondary film-forming metal-passivating agent in an aqueous carrier. Methods of polishing a substrate with the compositions of the invention are also disclosed.Type: ApplicationFiled: January 11, 2011Publication date: May 5, 2011Inventors: Jason KELEHER, Pankaj Singh, Vlasta Brusic
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Publication number: 20090134122Abstract: The present invention provides chemical-mechanical polishing (CMP) methods and compositions for polishing copper-containing substrates. The methods of the present invention entail abrading a surface of a copper-containing substrate with a CMP composition of the invention, preferably in the presence of an oxidizing agent (e.g., hydrogen peroxide). The CMP compositions of the invention comprise a particulate abrasive, a copper-complexing agent, a copper-passivating agent bearing an acidic OH group and an additional oxygen substituent in a 1,6 relationship to the acidic OH group, and an aqueous carrier. A preferred composition of the invention comprises about 0.01 to about 1 percent by weight of the particulate abrasive, about 0.1 to about 1 percent by weight of the copper-complexing agent, about 10 to about 1000 ppm of the copper-passivating agent.Type: ApplicationFiled: November 27, 2007Publication date: May 28, 2009Inventors: Daniela White, Jason Keleher, John Parker
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Patent number: 7456107Abstract: The present invention provides a chemical-mechanical polishing (CMP) composition suitable for polishing low-k dielectric materials. The composition comprises a particulate abrasive material, at least one silicone-free nonionic surfactant comprising a hydrophilic portion and a lipophilic portion, at least one silicone-containing nonionic surfactant comprising a hydrophilic portion and a lipophilic portion, and an aqueous carrier therefor. A CMP method for polishing a low-k dielectric surface utilizing the composition is also disclosed.Type: GrantFiled: November 9, 2006Date of Patent: November 25, 2008Assignee: Cabot Microelectronics CorporationInventors: Jason Keleher, Daniel Woodland, Francesco De Rege Thesauro, Robert Medsker, Jason Aggio
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Publication number: 20080203059Abstract: The inventive polishing composition comprises an abrasive, an aqueous medium, a surfactant in an amount above its critical micelle concentration, and a hydrophobic surface active compound. The invention also provides a method of using a polishing composition.Type: ApplicationFiled: February 27, 2007Publication date: August 28, 2008Applicant: Cabot Microelectronics CorporationInventors: Francesco De Rege Thesauro, Jason Keleher
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Publication number: 20080111101Abstract: The present invention provides a chemical-mechanical polishing (CMP) composition suitable for polishing low-k dielectric materials. The composition comprises a particulate abrasive material, at least one silicone-free nonionic surfactant comprising a hydrophilic portion and a lipophilic portion, at least one silicone-containing nonionic surfactant comprising a hydrophilic portion and a lipophilic portion, and an aqueous carrier therefor. A CMP method for polishing a low-k dielectric surface utilizing the composition is also disclosed.Type: ApplicationFiled: November 9, 2006Publication date: May 15, 2008Inventors: Jason Keleher, Daniel Woodland, Francesco De Rege Thesauro, Robert Medsker, Jason Aggio
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Publication number: 20080034670Abstract: A method of CMP of a substrate surface includes providing a polishing pad having a polishing layer, that may be substantially free of abrasive particles, with a functional group chemically bonded (covalent or ionic) to the polishing layer. The functional group acts as an activator or catalyst for a compound of a polishing slurry to exhibit a higher material removal rate for removing selected portions of the surface of the substrate than exhibited in CMP of a substantially identical substrate in the presence of a substantially identical polishing slurry and a polishing pad wherein the substantially identical polishing layer does not have the functional group. The functional group may be derived from a compound comprising a polyamine, a polyelectrolyte, and/or an amino acid. A method of making the CMP pad and the CMP pad formed thereby is also disclosed.Type: ApplicationFiled: August 20, 2007Publication date: February 14, 2008Applicant: PPG INDUSTRIES OHIO, INC.Inventors: Yuzhuo Li, Stuart Hellring, Jason Keleher, Tianxi Zhang
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Publication number: 20070037491Abstract: A method of CMP of a substrate surface includes providing a polishing pad having a polishing layer, that may be substantially free of abrasive particles, with a functional group chemically bonded (covalent or ionic) to the polishing layer. The functional group acts as an activator or catalyst for a compound of a polishing slurry to exhibit a higher material removal rate for removing selected portions of the surface of the substrate than exhibited in CMP of a substantially identical substrate in the presence of a substantially identical polishing slurry and a polishing pad wherein the substantially identical polishing layer does not have the functional group. The functional group may be derived from a compound comprising a polyamine, a polyelectrolyte, and/or an amino acid. A method of making the CMP pad and the CMP pad formed thereby is also disclosed.Type: ApplicationFiled: August 12, 2005Publication date: February 15, 2007Inventors: Yuzhuo Li, Stuart Hellring, Jason Keleher, Tianxi Zhang
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Patent number: 6916428Abstract: A photo-chemical remediation of Cu-CMP waste streams basically includes the following acts: adding photo-catalyst particles into waste streams containing copper ions and organic pollutants and exposing the waste streams to UV light or sunlight to make copper ions become deposited on surfaces of the photo-catalyst particles. Whereby, the copper ions are removed from the waste streams. Meanwhile, organic and inorganic pollutants are decomposed by the photolysis capability of the photo-catalyst to make the waste streams dischargable within environmental standards to the environment.Type: GrantFiled: October 3, 2003Date of Patent: July 12, 2005Assignees: Amia Corporation, Persee Chemical Co., Ltd.Inventors: Yuzhuo Li, Jason Keleher, Ning Gao
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Publication number: 20050072742Abstract: A photo-chemical remediation of Cu-CMP waste streams basically includes the following acts: adding photo-catalyst particles into waste streams containing copper ions and organic pollutants and exposing the waste streams to UV light or sunlight to make copper ions become deposited on surfaces of the photo-catalyst particles. Whereby, the copper ions are removed from the waste streams. Meanwhile, organic and inorganic pollutants are decomposed by the photolysis capability of the photo-catalyst to make the waste streams dischargable within environmental standards to the environment.Type: ApplicationFiled: October 3, 2003Publication date: April 7, 2005Inventors: Yuzhuo Li, Jason Keleher, Ning Gao
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Publication number: 20040092102Abstract: A chemical mechanical polishing (CMP) formulation and method for using the same. The composition is useful for polishing semiconductor substrates, and particularly substrate surfaces containing copper, tungsten, or alloys of the same. The CMP formulation may contain a copolymer enhancement agent such as a Pluronics® compound, and/or a vesicle encapsulating agent, as well as an active agent that is chemically reactive with the substrate to enhance polishing performance. The active agent may be a bifunctional compound that is capable of functioning as both a passivating agent and a complexing agent to achieve an optimum rate of passivation and oxidation on the substrate surface. An active agent can also take the form of an oxidation activator, such as a metal ion, encapsulated in a vesicle or micelle, that is released with applied pressure to accelerate the removal process and improve planarization efficiency.Type: ApplicationFiled: November 12, 2002Publication date: May 13, 2004Applicant: Sachem, Inc.Inventors: Yuzhou Li, Jason Keleher, Junzi Zhao, Chris Brancewicz
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Patent number: 6660639Abstract: The present invention provides a method of removing copper overlaying a tantalum-based barrier layer during the fabrication of a copper damascene structure having a plurality of copper lines. The method includes providing a chemical-mechanical polishing slurry and polishing the copper layer using the slurry until the tantalum-based barrier layer is exposed. The slurry includes an oxidizing agent that releases free radicals and a non-chelating free radical quencher that retards the corrosion of said copper lines during chemical mechanical polishing. Preferred non-chelating free radical quenchers are ascorbic acid, thiamine, 2-propanol, and alkyl glycols. The present invention also provides copper damascene structures formed according to the method.Type: GrantFiled: October 7, 2002Date of Patent: December 9, 2003Assignee: Ferro CorporationInventors: Yuzhuo Li, Jason Keleher
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Patent number: 6656241Abstract: This invention relates to a slurry composition and a method of its preparation. In particular, the slurry composition of the present invention includes a silica wherein the silica comprises a surface modification. The silica-based slurry of the present invention is suitable for polishing articles and especially useful for chemical-mechanical planarization (“CMP”) of semiconductor and other microelectronic substrates.Type: GrantFiled: June 14, 2001Date of Patent: December 2, 2003Assignee: PPG Industries Ohio, Inc.Inventors: Stuart D. Hellring, Colin P. McCann, Charles F. Kahle, Yuzhuo Li, Jason Keleher
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Publication number: 20030098434Abstract: The present invention provides a chemical-mechanical polishing slurry for use in removing copper overlaying a tantalum-based barrier layer during the fabrication of a copper damascene structure, and a method of retarding the corrosion of copper lines during the chemical-mechanical polishing of a copper damascene structure using the slurry. The slurry according to the invention includes an oxidizing agent that releases free radicals and a non-chelating free radical quencher that is effective to retard the corrosion of the copper lines during chemical-mechanical polishing. Preferred oxidizing agents that release free radicals used in the slurry according to the invention include peroxides, peroxydiphosphates, and persulfates. Preferred non-chelating free radical quenchers used in the slurry according to the invention include ascorbic acid, thiamine, 2-propanol, and alkyl glycols, with ascorbic acid being most preferred.Type: ApplicationFiled: October 7, 2002Publication date: May 29, 2003Applicant: Ferro CorporationInventors: Yuzhuo Li, Jason Keleher
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Patent number: 6508953Abstract: The present invention provides a chemical-mechanical polishing slurry for use in removing copper overlaying a tantalum-based barrier layer during the fabrication of a copper damascene structure, and a method of retarding the corrosion of copper lines during the chemical-mechanical polishing of a copper damascene structure using the slurry. The slurry according to the invention includes an oxidizing agent that releases free radicals and a non-chelating free radical quencher that is effective to retard the corrosion of the copper lines during chemical-mechanical polishing. Preferred oxidizing agents that release free radicals used in the slurry according to the invention include peroxides, peroxydiphosphates, and persulfates. Preferred non-chelating free radical quenchers used in the slurry according to the invention include ascorbic acid, thiamine, 2-propanol, and alkyl glycols, with ascorbic acid being most preferred.Type: GrantFiled: October 19, 2000Date of Patent: January 21, 2003Assignee: Ferro CorporationInventors: Yuzhuo Li, Jason Keleher