Abstract: Methods of forming semiconductor devices including an air gap extending through at least one metal layer, and the semiconductor device so formed, are disclosed. The air gap has a lower portion that contacts a silicide layer over a gate body of a transistor gate and has an inverted T-shape over the gate body. The air gap reduces the capacitance between a transistor gate in a device layer and adjacent wires and vias used to contact the source and drain of the transistor.

Abstract: The disclosed subject matter relates generally to semiconductor devices. More particularly, the present disclosure relates to Hall effect devices integrated with junction transistors to achieve tunable parameters within the Hall effect devices. The present disclosure also relates to methods of forming the Hall effect devices.