Abstract: A system has detectors configured to receive a beam of light reflected from a wafer. For example, three detectors may be used. Each of the detectors is a different channel. Images from the detectors are combined into a pseudo-color RGB image. A convolutional neural network unit (CNN) can receive the pseudo-color RGB image and determine a size of a defect in the pseudo-color RGB image. The CNN also can classify the defect into a size category.

Abstract: A location of grid lines in an image of a laser-annealed semiconductor wafer is determined. An area covered by the grid lines can be filled using a new gray value. The new gray value can be based on a second gray scale value of a neighborhood around the area. The neighborhood is outside of the area covered by the grid lines.

Abstract: A system has detectors configured to receive a beam of light reflected from a wafer. For example, three detectors may be used. Each of the detectors is a different channel. Images from the detectors are combined into a pseudo-color RGB image. A convolutional neural network unit (CNN) can receive the pseudo-color RGB image and determine a size of a defect in the pseudo-color RGB image. The CNN also can classify the defect into a size category.

Abstract: A system for defect detection and analysis is provided. The system may include an inspection sub-system and a controller including a memory and one or more processors. The inspection sub-system may include an illumination source and one or more detectors configured to acquire control patch images of defects of a control specimen along one or more detector channels. The one or more processors may be configured to train a defect classifier using the control patch images and known parameters associated with the defects of the control specimen. The inspection sub-system may be further configured to acquire patch images of identified defects on an additional specimen. The one or more processors may be configured to determine parameters of the identified defects using the defect classifier.

Abstract: Systems and methods for detecting defects on a wafer are provided. One method includes generating output for a wafer by scanning the wafer with an inspection system using first and second optical states of the inspection system. The first and second optical states are defined by different values for at least one optical parameter of the inspection system. The method also includes generating first image data for the wafer using the output generated using the first optical state and second image data for the wafer using the output generated using the second optical state. In addition, the method includes combining the first image data and the second image data corresponding to substantially the same locations on the wafer thereby creating additional image data for the wafer. The method further includes detecting defects on the wafer using the additional image data.

Abstract: A system for defect detection and analysis is provided. The system may include an inspection sub-system and a controller including a memory and one or more processors. The inspection sub-system may include an illumination source and one or more detectors configured to acquire control patch images of defects of a control specimen along one or more detector channels. The one or more processors may be configured to train a defect classifier using the control patch images and known parameters associated with the defects of the control specimen. The inspection sub-system may be further configured to acquire patch images of identified defects on an additional specimen. The one or more processors may be configured to determine parameters of the identified defects using the defect classifier.

Abstract: Systems and methods for detecting defects on a wafer are provided. One method includes generating output for a wafer by scanning the wafer with an inspection system using first and second optical states of the inspection system. The first and second optical states are defined by different values for at least one optical parameter of the inspection system. The method also includes generating first image data for the wafer using the output generated using the first optical state and second image data for the wafer using the output generated using the second optical state. In addition, the method includes combining the first image data and the second image data corresponding to substantially the same locations on the wafer thereby creating additional image data for the wafer. The method further includes detecting defects on the wafer using the additional image data.

Abstract: Systems and methods for detecting defects on a wafer are provided. One method includes generating output for a wafer by scanning the wafer with an inspection system using first and second optical states of the inspection system. The first and second optical states are defined by different values for at least one optical parameter of the inspection system. The method also includes generating first image data for the wafer using the output generated using the first optical state and second image data for the wafer using the output generated using the second optical state. In addition, the method includes combining the first image data and the second image data corresponding to substantially the same locations on the wafer thereby creating additional image data for the wafer. The method further includes detecting defects on the wafer using the additional image data.

Abstract: Various embodiments for determining parameters for wafer inspection and/or metrology are provided.

Abstract: Methods and systems for determining inspection scenarios without input from a user are presented. Inspection scenarios include at least one acquisition mode, defect detection parameter values, and classification parameter values. In one example, a number of defect events are determined by a hot inspection of a wafer surface. The defect events are classified and attributes associated with each defect event are identified. The defect events are labeled with this information. Based on the identified attributes and classification, inspection scenarios are determined. The inspection scenarios are solutions in a mathematical space formed by the identified attributes. In some examples, a plurality of inspection scenarios are determined and a desired inspection scenario is selected from the plurality based on the number of defects of interest and the number of nuisance events captured by the selected inspection scenario.

Abstract: Methods and systems for determining inspection scenarios without input from a user are presented. Inspection scenarios include at least one acquisition mode, defect detection parameter values, and classification parameter values. In one example, a number of defect events are determined by a hot inspection of a wafer surface. The defect events are classified and attributes associated with each defect event are identified. The defect events are labeled with this information. Based on the identified attributes and classification, inspection scenarios are determined. The inspection scenarios are solutions in a mathematical space formed by the identified attributes. In some examples, a plurality of inspection scenarios are determined and a desired inspection scenario is selected from the plurality based on the number of defects of interest and the number of nuisance events captured by the selected inspection scenario.

Abstract: Systems and methods for detecting defects on a wafer are provided. One method includes generating output for a wafer by scanning the wafer with an inspection system using first and second optical states of the inspection system. The first and second optical states are defined by different values for at least one optical parameter of the inspection system. The method also includes generating first image data for the wafer using the output generated using the first optical state and second image data for the wafer using the output generated using the second optical state. In addition, the method includes combining the first image data and the second image data corresponding to substantially the same locations on the wafer thereby creating additional image data for the wafer. The method further includes detecting defects on the wafer using the additional image data.

Abstract: Systems and methods for detecting defects on a wafer are provided. One method includes generating output for a wafer by scanning the wafer with an inspection system using first and second optical states of the inspection system. The first and second optical states are defined by different values for at least one optical parameter of the inspection system. The method also includes generating first image data for the wafer using the output generated using the first optical state and second image data for the wafer using the output generated using the second optical state. In addition, the method includes combining the first image data and the second image data corresponding to substantially the same locations on the wafer thereby creating additional image data for the wafer. The method further includes detecting defects on the wafer using the additional image data.

Abstract: Systems and methods for detecting defects on a wafer are provided. One method includes generating output for a wafer by scanning the wafer with an inspection system using first and second optical states of the inspection system. The first and second optical states are defined by different values for at least one optical parameter of the inspection system. The method also includes generating first image data for the wafer using the output generated using the first optical state and second image data for the wafer using the output generated using the second optical state. In addition, the method includes combining the first image data and the second image data corresponding to substantially the same locations on the wafer thereby creating additional image data for the wafer. The method further includes detecting defects on the wafer using the additional image data.

Abstract: Systems and methods for detecting defects on a wafer are provided. One method includes generating output for a wafer by scanning the wafer with an inspection system using first and second optical states of the inspection system. The first and second optical states are defined by different values for at least one optical parameter of the inspection system. The method also includes generating first image data for the wafer using the output generated using the first optical state and second image data for the wafer using the output generated using the second optical state. In addition, the method includes combining the first image data and the second image data corresponding to substantially the same locations on the wafer thereby creating additional image data for the wafer. The method further includes detecting defects on the wafer using the additional image data.

Abstract: Various embodiments for determining parameters for wafer inspection and/or metrology are provided.

Abstract: Computer-implemented methods, carrier media, and systems for selecting polarization settings for an inspection system for inspection of a layer of a wafer are provided. One method includes detecting a population of defects on the layer of the wafer using results of each of two or more scans of the wafer performed with different combinations of polarization settings of the inspection system for illumination and collection of light scattered from the wafer. The method also includes identifying a subpopulation of the defects for each of the different combinations, each of which includes the defects that are common to at least two of the different combinations, and determining a characteristic of a measure of signal-to-noise for each of the subpopulations. The method further includes selecting the polarization settings for the illumination and the collection to be used for the inspection corresponding to the subpopulation having the best value for the characteristic.

Abstract: Systems and methods for detecting defects on a wafer are provided. One method includes generating output for a wafer by scanning the wafer with an inspection system using first and second optical states of the inspection system. The first and second optical states are defined by different values for at least one optical parameter of the inspection system. The method also includes generating first image data for the wafer using the output generated using the first optical state and second image data for the wafer using the output generated using the second optical state. In addition, the method includes combining the first image data and the second image data corresponding to substantially the same locations on the wafer thereby creating additional image data for the wafer. The method further includes detecting defects on the wafer using the additional image data.

Abstract: Computer-implemented methods, carrier media, and systems for selecting polarization settings for an inspection system for inspection of a layer of a wafer are provided. One method includes detecting a population of defects on the layer of the wafer using results of each of two or more scans of the wafer performed with different combinations of polarization settings of the inspection system for illumination and collection of light scattered from the wafer. The method also includes identifying a subpopulation of the defects for each of the different combinations, each of which includes the defects that are common to at least two of the different combinations, and determining a characteristic of a measure of signal-to-noise for each of the subpopulations. The method further includes selecting the polarization settings for the illumination and the collection to be used for the inspection corresponding to the subpopulation having the best value for the characteristic.

Abstract: A heat shield includes an inner portion, an outer portion, first and second insulating portions, and a deflecting portion. The inner portion includes a reflective material to reflect thermal energy that radiates from a heat/acoustic source. The outer portion includes a rigid material to provide structural support for the heat shield. The first and second insulating portions are intermediately positioned between the inner and outer portions. The deflecting portion is intermediately positioned between the first and second insulating portions to deflect acoustics from the heat/acoustic source. A method for manufacturing the heat shield is also disclosed.