Patents by Inventor Jason L. Nevill
Jason L. Nevill has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10665307Abstract: Memory devices include an array of memory cells and circuitry for control and/or access of the array of memory cells, wherein the circuitry is configured to perform a method including applying a first voltage to the access line following a verify of the program operation then electrically floating the access line, connecting the access line to the first input of the operational amplifier, applying a second voltage to a second access line adjacent the access line, applying a reference current to the access line while applying the second voltage to the second access line, applying the reference voltage to the second input of the operational amplifier while applying the second voltage to the second access line, and indicating a fail status of the program operation if current flow to or from the access line exceeds the reference current sinking current from, or sourcing current to, respectively, the first access line.Type: GrantFiled: June 5, 2019Date of Patent: May 26, 2020Assignee: Micron Technology, Inc.Inventors: Jeffrey A. Kessenich, Joemar Sinipete, Chiming Chu, Jason L. Nevill, Kenneth W. Marr, Renato C. Padilla
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Publication number: 20190287634Abstract: Memory devices include an array of memory cells and circuitry for control and/or access of the array of memory cells, wherein the circuitry is configured to perform a method including applying a first voltage to the access line following a verify of the program operation then electrically floating the access line, connecting the access line to the first input of the operational amplifier, applying a second voltage to a second access line adjacent the access line, applying a reference current to the access line while applying the second voltage to the second access line, applying the reference voltage to the second input of the operational amplifier while applying the second voltage to the second access line, and indicating a fail status of the program operation if current flow to or from the access line exceeds the reference current sinking current from, or sourcing current to, respectively, the first access line.Type: ApplicationFiled: June 5, 2019Publication date: September 19, 2019Applicant: MICRON TECHNOLOGY, INC.Inventors: Jeffrey A. Kessenich, Joemar Sinipete, Chiming Chu, Jason L. Nevill, Kenneth W. Marr, Renato C. Padilla
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Patent number: 10366767Abstract: Memory devices include an array of memory cells and circuitry for control and/or access of the array of memory cells, wherein the circuitry is configured to perform a method including applying a particular voltage to an unselected access line of a program operation, sensing a current of a selected access line of the program operation while applying the particular voltage to the unselected access line, indicating a fail status of the program operation if an absolute value of the sensed current of the selected access line is greater than a particular current, and proceeding with the program operation if the absolute value of the sensed current of the selected access line is less than a particular current.Type: GrantFiled: August 25, 2017Date of Patent: July 30, 2019Assignee: Micron Technology, Inc.Inventors: Jeffrey A. Kessenich, Joemar Sinipete, Chiming Chu, Jason L. Nevill, Kenneth W. Marr, Renato C. Padilla
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Publication number: 20170352431Abstract: Memory devices include an array of memory cells and circuitry for control and/or access of the array of memory cells, wherein the circuitry is configured to perform a method including applying a particular voltage to an unselected access line of a program operation, sensing a current of a selected access line of the program operation while applying the particular voltage to the unselected access line, indicating a fail status of the program operation if an absolute value of the sensed current of the selected access line is greater than a particular current, and proceeding with the program operation if the absolute value of the sensed current of the selected access line is less than a particular current.Type: ApplicationFiled: August 25, 2017Publication date: December 7, 2017Applicant: MICRON TECHNOLOGY, INC.Inventors: Jeffrey A. Kessenich, Joemar Sinipete, Chiming Chu, Jason L. Nevill, Kenneth W. Marr, Renato C. Padilla
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Patent number: 9761322Abstract: Methods of operating a memory device having embedded leak checks may mitigate data loss events due to access line defects, and may facilitate improved power consumption characteristics. Such methods might include applying a program pulse to a selected access line coupled to a memory cell selected for programming, verifying whether the selected memory cell has reached a desired data state, bringing the selected access line to a first voltage, applying a second voltage to an unselected access line, applying a reference current to the selected access line, and determining if a current flow between the selected access line and the unselected access line is greater than the reference current.Type: GrantFiled: February 9, 2016Date of Patent: September 12, 2017Assignee: Micron Technology, Inc.Inventors: Jeffery A. Kessenich, Joemar Sinipete, Chiming Chu, Jason L. Nevill, Kenneth W. Marr, Renato C. Padilla
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Publication number: 20160155513Abstract: Methods of operating a memory device having embedded leak checks may mitigate data loss events due to access line defects, and may facilitate improved power consumption characteristics. Such methods might include applying a program pulse to a selected access line coupled to a memory cell selected for programming, verifying whether the selected memory cell has reached a desired data state, bringing the selected access line to a first voltage, applying a second voltage to an unselected access line, applying a reference current to the selected access line, and determining if a current flow between the selected access line and the unselected access line is greater than the reference current.Type: ApplicationFiled: February 9, 2016Publication date: June 2, 2016Applicant: MICRON TECHNOLOGY, INC.Inventors: Jeffery A. Kessenich, Joemar Sinipete, Chiming Chu, Jason L. Nevill, Kenneth W. Marr, Renato C. Padilla
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Patent number: 9281078Abstract: Methods of operating a memory device having embedded leak checks may mitigate data loss events due to access line defects, and may facilitate improved power consumption characteristics. Such methods might include applying a program pulse to a selected access line coupled to a memory cell selected for programming, verifying whether the selected memory cell has reached a desired data state, bringing the selected access line to a first voltage, applying a second voltage to an unselected access line, applying a reference current to the selected access line, and determining if a current flow between the selected access line and the unselected access line is greater than the reference current.Type: GrantFiled: June 12, 2014Date of Patent: March 8, 2016Assignee: Micron Technology, Inc.Inventors: Jeffrey A. Kessenich, Joemar Sinipete, Chiming Chu, Jason L. Nevill, Kenneth W. Marr, Renato C. Padilla
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Publication number: 20150364213Abstract: Methods of operating a memory device having embedded leak checks may mitigate data loss events due to access line defects, and may facilitate improved power consumption characteristics. Such methods might include applying a program pulse to a selected access line coupled to a memory cell selected for programming, verifying whether the selected memory cell has reached a desired data state, bringing the selected access line to a first voltage, applying a second voltage to an unselected access line, applying a reference current to the selected access line, and determining if a current flow between the selected access line and the unselected access line is greater than the reference current.Type: ApplicationFiled: June 12, 2014Publication date: December 17, 2015Applicant: Micron Technology, Inc.Inventors: Jeffrey A. Kessenich, Joemar Sinipete, Chiming Chu, Jason L. Nevill, Kenneth W. Marr, Renato C. Padilla