Abstract: The present disclosure provides a layering structure that permits integration of epitaxially oriented perovskite oxides, such as bismuth ferrite (BiFeO3), epitaxially oriented barium titanate (BaTiO3), epitaxially oriented (SrTiO3), or their superstructures (BTO/STO) or solid solutions, onto a Si substrate through a perovskite buffer layer. The structure can retain thermal process-sensitive dopant positions and other thermal process window-sensitive features through atomic layer deposition of an oxide perovskite. Also provided are methods of preparing these layered structures.