Abstract: Systems and methods are disclosed for plasma discharge ignition to reduce surface particles and thereby decrease defects introduced during plasma processing. A microelectronic workpiece is positioned on a holder within a process chamber that includes a first radio frequency (RF) power source configured to couple RF power to a top portion of the process chamber, a second RF power source configured to couple RF power to the holder, and a direct current (DC) power supply. Initially, a process gas for plasma process is flowed into the process chamber. The process gas is ignited to form plasma by activating the second RF power source to apply RF power to the holder. Subsequently, the microelectronic workpiece is clamped to the holder by applying the positive voltage to the holder with the DC power supply, and the first RF power source is activated to maintain the plasma within the process chamber.

Abstract: Methods are disclosed to detect plasma light emissions during plasma processing, to analyze light intensity data associated with the plasma source, and to adjust operating parameters for the plasma source and/or the process chamber based upon light intensity distributions associated with the plasma processing. The light intensity distributions for the plasma sources and related analysis can be conducted across multiple processing tools. For some embodiments, plasma discharge stability and/or chamber-to-chamber matching information is determined based upon light intensity data, and the operation of the processing tools are adjusted or controlled based upon stability and/or matching determinations. The disclosed embodiments thereby provide simple, low-cost solutions to assess and improve plasma sources and discharge stability for plasma processing tools such as plasma etch and deposition tools.

Abstract: Provided are methods and systems for operation instability detection in a surface wave plasma source. In an embodiment a system for plasma processing may include a surface wave plasma source configured to generate a plasma field. The system may also include an optical sensor configured to generate information characteristic of optical energy collected in a region proximate to the surface wave plasma source. Additionally, the system may include a sensor logic unit configured to detect a region of instability proximate to the surface wave plasma source in response to the information generated by the optical sensor.

Abstract: Methods are disclosed to detect plasma light emissions during plasma processing, to analyze light intensity data associated with the plasma source, and to adjust operating parameters for the plasma source and/or the process chamber based upon light intensity distributions associated with the plasma processing. The light intensity distributions for the plasma sources and related analysis can be conducted across multiple processing tools. For some embodiments, plasma discharge stability and/or chamber-to-chamber matching information is determined based upon light intensity data, and the operation of the processing tools are adjusted or controlled based upon stability and/or matching determinations. The disclosed embodiments thereby provide simple, low-cost solutions to assess and improve plasma sources and discharge stability for plasma processing tools such as plasma etch and deposition tools.

Abstract: Manufacturing methods are disclosed to reduce surface particle impurities after a plasma process (e.g., etch, deposition, etc.) by repelling particles trapped within particle wells to reduce surface particle impurities on microelectronic workpieces after termination of the plasma process. Rather than turn off pressure and source power at the termination of the plasma process, the disclosed embodiments first enter a sequence to adjust process parameters to repel particles in a particle well in order to reduce or eliminate the particle well prior to terminating the plasma process. During this particle repel sequence, certain disclosed embodiments adjust parameters to maintain an electrostatic field above the surface of the wafer utilizing low plasma density and ion energy conditions that help to repel particles from the microelectronic workpiece. The disclosed methods allow for the particle well to be exhausted well prior to the collapse of electrostatic forces when the plasma process is terminated.

Abstract: Described herein is a technology related to a method for utilizing a dual-frequency surface wave plasma sources to provide stable ionizations on a plasma processing system. Particularly, the dual-frequency surface wave plasma sources may include a primary surface wave power plasma source and a secondary power plasma source, which is provided on each recess of a plurality of recesses. The secondary power plasma source, for example, may provide the stable ionization on the plasma processing system.

Abstract: Systems and methods are disclosed for plasma discharge ignition to reduce surface particles and thereby decrease defects introduced during plasma processing. A microelectronic workpiece is positioned on a holder within a process chamber that includes a first radio frequency (RF) power source configured to couple RF power to a top portion of the process chamber, a second RF power source configured to couple RF power to the holder, and a direct current (DC) power supply. Initially, a process gas for plasma process is flowed into the process chamber. The process gas is ignited to form plasma by activating the second RF power source to apply RF power to the holder. Subsequently, the microelectronic workpiece is clamped to the holder by applying the positive voltage to the holder with the DC power supply, and the first RF power source is activated to maintain the plasma within the process chamber.

Abstract: Described herein is a technology related to a method for utilizing a dual-frequency surface wave plasma sources to provide stable ionizations on a plasma processing system. Particularly, the dual-frequency surface wave plasma sources may include a primary surface wave power plasma source and a secondary power plasma source, which is provided on each recess of a plurality of recesses. The secondary power plasma source, for example, may provide the stable ionization on the plasma processing system.

Abstract: Provided are methods and systems for operation instability detection in a surface wave plasma source. In an embodiment a system for plasma processing may include a surface wave plasma source configured to generate a plasma field. The system may also include an optical sensor configured to generate information characteristic of optical energy collected in a region proximate to the surface wave plasma source. Additionally, the system may include a sensor logic unit configured to detect a region of instability proximate to the surface wave plasma source in response to the information generated by the optical sensor.

Abstract: A plasma processing method and apparatus are provided in which current spikes associated with application of a voltage to an electrostatic chuck (ESC) are minimized or reduced when the processing plasma is present. According to an example, the voltage is applied to the ESC after the processing plasma is struck, however the voltage is ramped or increased in a step-wise manner to achieve the desired final ESC voltage. In an alternate embodiment, the ESC voltage is at least partially applied before striking of the plasma for processing the wafer. By reducing current spikes associated with application of the voltage to the ESC during the presence of the processing plasma, transfer or deposition of particles on the wafer can be reduced.

Abstract: A plasma processing method and apparatus are provided in which current spikes associated with application of a voltage to an electrostatic chuck (ESC) are minimized or reduced when the processing plasma is present. According to an example, the voltage is applied to the ESC after the processing plasma is struck, however the voltage is ramped or increased in a step-wise manner to achieve the desired final ESC voltage. In an alternate embodiment, the ESC voltage is at least partially applied before striking of the plasma for processing the wafer. By reducing current spikes associated with application of the voltage to the ESC during the presence of the processing plasma, transfer or deposition of particles on the wafer can be reduced.

Abstract: A support assembly for supporting a moveable member of an agricultural combine is provided. The support assembly includes a moveable member, such as a foldable chaff pan assembly for spreading chaff and other crop residue from the rear of an agricultural combine, a support member and a resilient member connected to the support member for supporting the moveable member. The resilient member can be configured as an arched shaped or cylindrically shaped member.