Patents by Inventor Jason McMonagle

Jason McMonagle has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Capacitor including a capacitor plate formed from a doped semiconductor
    Patent number: 9299858
    Abstract: A capacitor comprising: a metal plate a doped semiconductor plate; and a dielectric sandwiched therebetween.
    Type: Grant
    Filed: November 7, 2007
    Date of Patent: March 29, 2016
    Assignee: RFMD (UK) Limited
    Inventors: Ronald Arnold, Jason McMonagle
  • Method of correcting for pattern run out
    Patent number: 7862859
    Abstract: A method of correcting for pattern run out in a desired pattern in directional deposition or etching comprising the steps of providing a test substrate; providing a stencil of known thickness on the test substrate; providing a stencil pattern extending through the stencil to the test substrate.
    Type: Grant
    Filed: June 1, 2007
    Date of Patent: January 4, 2011
    Assignee: RFMD (UK) Limited
    Inventor: Jason McMonagle
  • CAPACITOR
    Publication number: 20080106851
    Abstract: A capacitor comprising: a metal plate a doped semiconductor plate; and a dielectric sandwiched therebetween.
    Type: Application
    Filed: November 7, 2007
    Publication date: May 8, 2008
    Applicant: FILTRONIC COMPOUND SEMICONDUCTORS LIMITED
    Inventors: Ronald Arnold, Jason McMonagle
  • METHOD OF CORRECTING FOR PATTERN RUN OUT
    Publication number: 20070281225
    Abstract: A method of correcting for pattern run out in a desired pattern in directional deposition or etching comprising the steps of providing a test substrate; providing a stencil of known thickness on the test substrate; providing a stencil pattern extending through the stencil to the test substrate.
    Type: Application
    Filed: June 1, 2007
    Publication date: December 6, 2007
    Applicant: FILTRONIC COMPOUND SEMICONDUCTORS LIMITED
    Inventor: Jason McMonagle
  • Method of producing a trench in a photo-resist on a III-V wafer and a compound wafer having a photo-resist including such a trench
    Publication number: 20070042611
    Abstract: A method of producing a trench in a photo-resist on a III-V wafer comprising providing a III-V wafer; providing a photo-resist on the wafer; exposing the photo-resist to UV radiation through a mask; removing one of the exposed or non-exposed portions of the photo-resist to produce a recess; applying a polymer spacer to the photo-resist; heating the wafer to initiate a polymer cross linking reaction at the interface of the photo-resist and polymer; and removing the un-reacted polymer.
    Type: Application
    Filed: August 18, 2006
    Publication date: February 22, 2007
    Inventor: Jason McMonagle