Patents by Inventor JASON MICHAEL STEPHENS

JASON MICHAEL STEPHENS has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • System and method for recycling a gas used to deposit a semiconductor layer
    Patent number: 8444766
    Abstract: A system for recycling includes a processing chamber, a reclamation reservoir and a mixing reservoir. The processing chamber is configured to receive a deposition gas deposited onto a semiconductor layer. The processing chamber has an exhaust to discharge an unused portion of the deposition gas as an effluent gas. The reclamation reservoir is in fluid communication with the processing chamber. The reclamation reservoir is configured to receive and store the effluent gas from the processing chamber. The mixing reservoir is in fluid communication with the reclamation reservoir and the processing chamber. The mixing reservoir is configured to mix the effluent gas with a virgin gas to form a recycled deposition gas. The mixing reservoir supplies the recycled deposition gas to the processing chamber to deposit an additional portion of the semiconductor layer.
    Type: Grant
    Filed: December 10, 2009
    Date of Patent: May 21, 2013
    Assignee: ThinSilicon Corporation
    Inventors: Jason Michael Stephens, Bradley Owen Stimson, Guleid Nur Abdi Hussen
  • SYSTEM AND METHOD FOR RECYCLING A GAS USED TO DEPOSIT A SEMICONDUCTOR LAYER
    Publication number: 20100144066
    Abstract: A system for recycling includes a processing chamber, a reclamation reservoir and a mixing reservoir. The processing chamber is configured to receive a deposition gas deposited onto a semiconductor layer. The processing chamber has an exhaust to discharge an unused portion of the deposition gas as an effluent gas. The reclamation reservoir is in fluid communication with the processing chamber. The reclamation reservoir is configured to receive and store the effluent gas from the processing chamber. The mixing reservoir is in fluid communication with the reclamation reservoir and the processing chamber. The mixing reservoir is configured to mix the effluent gas with a virgin gas to form a recycled deposition gas. The mixing reservoir supplies the recycled deposition gas to the processing chamber to deposit an additional portion of the semiconductor layer.
    Type: Application
    Filed: December 10, 2009
    Publication date: June 10, 2010
    Applicant: THINSILICON CORPORATION
    Inventors: JASON MICHAEL STEPHENS, BRADLEY OWEN STIMSON, GULEID NUR ABDI HUSSEN