Abstract: A system and method for exposing different parts of a single field of view for various and differing lengths of time while capturing an image is provided. For astrophotography, unwanted light pollution or over-saturation bleeding from nearby or obtrusive stars may be greatly reduced or eliminated while still capturing the image of the nearby brighter star in the same field of view. Also, a system and method for real-time contrast control while capturing an image to optimize signal-to-noise ratio for various parts of the captured image, is provided. An embodiment of the present invention provides such techniques by using spatial light modulator devices, such as a digital micro-mirror device, to controllably mask different portions of light from an image that expose film or a charge-coupled device. A system and method for a way to use a spatial light modulator device as an active and controllable mask for photolithography, is provided.

Abstract: A method and a material for creating an antireflective coating on an integrated circuit. A preferred embodiment comprises applying a dark polymer material on a reflective surface, curing the dark polymer material, and roughening a top surface of the dark polymer material. The roughening can be achieved by ashing the dark polymer material in an ash chamber. The dark polymer material, preferably a black matrix resin or a polyimide black matrix resin, when ashed in an oxygen rich atmosphere for a short period of time, forms a surface that is capable of absorbing light as well as randomly refracting light it does not absorb. A protective cap layer may be formed on top of the ashed dark polymer material to provide protection for the dark polymer material.

Abstract: The present invention provides a system for selectively restricting movement of a MEMS device (200). The system of the present invention provides a device comprising movable MEMS device structure (222) and a fixed gate structure (218). A latch structure (248) is formed or otherwise disposed along the MEMS device structure, in proximity to the gate structure. A locking electrode (212) is disposed or formed in proximity to the gate structure, and is adapted to force the latch structure into engagement with the gate structure responsive to an activation signal. Circuitry (202) provides the activation signal to the locking electrode.

Abstract: According to one embodiment of the present invention, a semiconductor device includes a first layer of dielectric material disposed upon an upper surface of a substrate of the semiconductor device, a first layer of metal disposed upon an upper surface of the first layer of dielectric material, and a thick film anti-reflective layer having a thickness of at least about one micron disposed upon an upper surface of the first layer of metal.

Abstract: According to one embodiment of the present invention, a semiconductor device includes a first layer of dielectric material disposed upon an upper surface of a substrate of a semiconductor device and a first non-conductive layer of metal disposed upon an upper surface of the dielectric material. The first layer of dielectric material and the first non-conductive layer of metal act as an optical trap for electromagnetic radiation received by the first non-conductive layer of metal. In particular embodiments, the semiconductor device may further comprise a second layer of dielectric material disposed upon an upper surface of the first non-conductive layer of metal and a second non-conductive layer of metal disposed upon an upper surface of the second layer of dielectric material.