Abstract: A process for forming T-shaped metal contacts on a dielectric substrate. The process includes deposition of first and second photoresist layers onto a substrate; individually overall electron beam exposure of both layers; with subsequent imagewise UV exposure and development of both layers to form hollow cavities in the layers. By concentrating the electron beam radiation on the mid-point in the thickness of each photoresist layer, the radiation is distributed throughout each layer, resulting in solubility properties which lead to the formation of hollow cavities of a certain desired shape. In one embodiment of the invention, three-dimensional structures are formed in the photoresist layers by filling the hollow cavities with metal. Subsequent removal of unwanted portions of the photoresist layers produces a dielectric substrate having T-shaped metal contacts on its surface.

Abstract: A process for forming a photoresist image on a substrate and a process for forming metal contacts on a substrate are described. The process of forming a photoresist image includes depositing a positive working photoresist composition onto a metal layer which is on a substrate to thereby form a photoresist layer then imagewise exposing the photoresist layer to actinic radiation and developing said photoresist layer to form a plurality of cavities through the photoresist layer thereby revealing portions of the metal layer. Then the inventions provides for etching away the revealed portions of the metal layer followed by an overall exposing both the substrate and the remaining photoresist layer and remaining metal layer portions to sufficient electron beam radiation to render a part of the photoresist layer directly adjacent to the metal layer more soluble in a developer than the balance of the photoresist layer.

Abstract: A process for forming a photoresist image on a substrate and a process for forming metal contacts on a substrate are described.