Patents by Inventor Jason Q. Niu

Jason Q. Niu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Sacrificial benzocyclobutene/norbornene polymers for making air gap semiconductor devices
    Patent number: 7598114
    Abstract: A method of forming an air gap within a semiconductor structure by the steps of: (a) using a sacrificial polymer to occupy a space in a semiconductor structure; and (b) heating the semiconductor structure to decompose the sacrificial polymer leaving an air gap within the semiconductor structure, wherein the sacrificial polymer of step (a) is: (a) a copolymer of 5-ethylidene-2-norbornene and vinylbenzocyclobutene (or a vinylbenzocyclobutene derivative); or (b) a copolymer of 5-ethylidene-2-norbornene and 5-(3benzocyclobutylidene)-2-norbornene; or (c) a polymer of 5-(3benzocyclobutylidene)-2-norbornene. In addition, a semiconductor structure, having a sacrificial polymer positioned between conductor lines, wherein the sacrificial polymer is: (a) a copolymer of 5-ethylidene-2-norbornene and vinylbenzocyclobutene (or a vinylbenzocyclobutene derivative); or (b) a copolymer of 5-ethylidene-2-norbornene and 5-(3benzocyclobutylidene)-2-norbornene; or (c) a polymer of 5-(3benzocyclobutylidene)-2-norbornene.
    Type: Grant
    Filed: January 30, 2004
    Date of Patent: October 6, 2009
    Inventors: Youngfu Li, Robert A. Kirchhoff, Jason Q. Niu, Kenneth L. Foster
  • Sacrificial benzocyclobutene copolymers for making air gap semiconductor devices
    Patent number: 7585785
    Abstract: A method of forming an air gap within a semiconductor structure by the steps of: (a) using a sacrificial polymer to occupy a space in a semiconductor structure; and (b) heating the semiconductor structure to decompose the sacrificial polymer leaving an air gap within the semiconductor structure, wherein the sacrificial polymer of step (a) is a copolymer of bis[3-(4-benzocyclobutenyl)]1,n (n=2-12) alkyldiol diacrylate (such as bis[3-(4-benzocyclobutenyl)]1,6 hexanediol diacrylate) and 1,3 bis 2[4-benzocyclobutenyl(ethenyl)]benzene. In addition, a semiconductor structure, having a sacrificial polymer positioned between conductor lines, wherein the sacrificial polymer is a copolymer of bis[3-(4-benzocyclobutenyl)]1,n (n=2-12)alkyldiol diacrylate and 1,3 bis 2[4-benzocyclobutenyl(ethenyl)]benzene.
    Type: Grant
    Filed: January 30, 2004
    Date of Patent: September 8, 2009
    Assignee: Dow Global Technologies
    Inventors: Robert A. Kirchhoff, Jason Q. Niu, Yongfu Li, Kenneth L. Foster