Abstract: A microelectronic device includes a stack structure including a vertically alternating sequence of conductive structures and insulating structures arranged in tiers, a dielectric-filled opening vertically extending into the stack structure and defined between two internal sidewalls of the stack structure, a stadium structure within the stack structure and comprising steps defined by horizontal ends of at least some of the tiers, a first ledge extending upward from a first uppermost step of the steps of the stadium structure and interfacing with a first internal sidewall of the two internal sidewalls of the stack structure, and a second ledge extending upward from a second, opposite uppermost step of the steps of the stadium structure and interfacing with a second, opposite internal sidewall of the two internal sidewalls.

Abstract: A microelectronic device includes a stack structure including a vertically alternating sequence of conductive structures and insulating structures arranged in tiers, a dielectric-filled opening vertically extending into the stack structure and defined between two internal sidewalls of the stack structure, a stadium structure within the stack structure and comprising steps defined by horizontal ends of at least some of the tiers, a first ledge extending upward from a first uppermost step of the steps of the stadium structure and interfacing with a first internal sidewall of the two internal sidewalls of the stack structure, and a second ledge extending upward from a second, opposite uppermost step of the steps of the stadium structure and interfacing with a second, opposite internal sidewall of the two internal sidewalls.

Abstract: Methods of improving adhesion between a photoresist and conductive or insulating structures. The method comprises forming a slot through at least a portion of alternating conductive structures and insulating structures on a substrate. Portions of the conductive structures or of the insulating structures are removed to form recesses in the conductive structures or in the insulating structures. A photoresist is formed over the alternating conductive structures and insulating structures and within the slot. Methods of improving adhesion between a photoresist and a spin-on dielectric material are also disclosed, as well as methods of forming a staircase structure.

Abstract: Methods of improving adhesion between a photoresist and conductive or insulating structures. The method comprises forming a slot through at least a portion of alternating conductive structures and insulating structures on a substrate. Portions of the conductive structures or of the insulating structures are removed to form recesses in the conductive structures or in the insulating structures. A photoresist is formed over the alternating conductive structures and insulating structures and within the slot. Methods of improving adhesion between a photoresist and a spin-on dielectric material are also disclosed, as well as methods of forming a staircase structure.

Abstract: A device comprises an array of elevationally-extending transistors and a circuit structure adjacent and electrically coupled to the elevationally-extending transistors of the array. The circuit structure comprises a stair step structure comprising vertically-alternating tiers comprising conductive steps that are at least partially elevationally separated from one another by insulative material. Operative conductive vias individually extend elevationally through one of the conductive steps at least to a bottom of the vertically-alternating tiers and individually electrically couple to an electronic component below the vertically-alternating tiers. Dummy structures individually extend elevationally through one of the conductive steps at least to the bottom of the vertically-alternating tiers. Methods are also disclosed.

Abstract: Methods of improving adhesion between a photoresist and conductive or insulating structures. The method comprises forming a slot through at least a portion of alternating conductive structures and insulating structures on a substrate. Portions of the conductive structures or of the insulating structures are removed to form recesses in the conductive structures or in the insulating structures. A photoresist is formed over the alternating conductive structures and insulating structures and within the slot. Methods of improving adhesion between a photoresist and a spin-on dielectric material are also disclosed, as well as methods of forming a staircase structure.

Abstract: Methods of improving adhesion between a photoresist and conductive or insulating structures. The method comprises forming a slot through at least a portion of alternating conductive structures and insulating structures on a substrate. Portions of the conductive structures or of the insulating structures are removed to form recesses in the conductive structures or in the insulating structures. A photoresist is formed over the alternating conductive structures and insulating structures and within the slot. Methods of improving adhesion between a photoresist and a spin-on dielectric material are also disclosed, as well as methods of forming a staircase structure.

Abstract: A microelectronic device includes a stack structure including a vertically alternating sequence of conductive structures and insulating structures arranged in tiers, a dielectric-filled opening vertically extending into the stack structure and defined between two internal sidewalls of the stack structure, a stadium structure within the stack structure and comprising steps defined by horizontal ends of at least some of the tiers, a first ledge extending upward from a first uppermost step of the steps of the stadium structure and interfacing with a first internal sidewall of the two internal sidewalls of the stack structure, and a second ledge extending upward from a second, opposite uppermost step of the steps of the stadium structure and interfacing with a second, opposite internal sidewall of the two internal sidewalls.

Abstract: A device comprises an array of elevationally-extending transistors and a circuit structure adjacent and electrically coupled to the elevationally-extending transistors of the array. The circuit structure comprises a stair step structure comprising vertically-alternating tiers comprising conductive steps that are at least partially elevationally separated from one another by insulative material. Operative conductive vias individually extend elevationally through one of the conductive steps at least to a bottom of the vertically-alternating tiers and individually electrically couple to an electronic component below the vertically-alternating tiers. Dummy structures individually extend elevationally through one of the conductive steps at least to the bottom of the vertically-alternating tiers. Methods are also disclosed.

Abstract: A device comprises an array of elevationally-extending transistors and a circuit structure adjacent and electrically coupled to the elevationally-extending transistors of the array. The circuit structure comprises a stair step structure comprising vertically-alternating tiers comprising conductive steps that are at least partially elevationally separated from one another by insulative material. Operative conductive vias individually extend elevationally through one of the conductive steps at least to a bottom of the vertically-alternating tiers and individually electrically couple to an electronic component below the vertically-alternating tiers. Dummy structures individually extend elevationally through one of the conductive steps at least to the bottom of the vertically-alternating tiers. Methods are also disclosed.

Abstract: A method used in forming integrated circuitry comprises forming a stack of vertically-alternating tiers of different composition materials. A stair-step structure is formed into the stack and an upper landing is formed adjacent and above the stair-step structure. The stair-step structure is formed to comprise vertically-alternating tiers of the different composition materials. A plurality of stairs individually comprise two of the tiers of different composition materials. At least some of the stairs individually have only two tiers that are each only of a different one of the different composition materials. An upper of the stairs that is below the upper landing comprises at least four of the tiers of different composition materials. Structure independent of method is disclosed.

Abstract: Methods of improving adhesion between a photoresist and conductive or insulating structures. The method comprises forming a slot through at least a portion of alternating conductive structures and insulating structures on a substrate. Portions of the conductive structures or of the insulating structures are removed to form recesses in the conductive structures or in the insulating structures. A photoresist is formed over the alternating conductive structures and insulating structures and within the slot. Methods of improving adhesion between a photoresist and a spin-on dielectric material are also disclosed, as well as methods of forming a staircase structure.

Abstract: Methods of improving adhesion between a photoresist and conductive or insulating structures. The method comprises forming a slot through at least a portion of alternating conductive structures and insulating structures on a substrate. Portions of the conductive structures or of the insulating structures are removed to form recesses in the conductive structures or in the insulating structures. A photoresist is formed over the alternating conductive structures and insulating structures and within the slot. Methods of improving adhesion between a photoresist and a spin-on dielectric material are also disclosed, as well as methods of forming a staircase structure.

Abstract: Methods of improving adhesion between a photoresist and conductive or insulating structures. The method comprises forming a slot through at least a portion of alternating conductive structures and insulating structures on a substrate. Portions of the conductive structures or of the insulating structures are removed to form recesses in the conductive structures or in the insulating structures. A photoresist is formed over the alternating conductive structures and insulating structures and within the slot. Methods of improving adhesion between a photoresist and a spin-on dielectric material are also disclosed, as well as methods of forming a staircase structure.

Abstract: A method used in forming integrated circuitry comprises forming a stack of vertically-alternating tiers of different composition materials. A stair-step structure is formed into the stack and an upper landing is formed adjacent and above the stair-step structure. The stair-step structure is formed to comprise vertically-alternating tiers of the different composition materials. A plurality of stairs individually comprise two of the tiers of different composition materials. At least some of the stairs individually have only two tiers that are each only of a different one of the different composition materials. An upper of the stairs that is below the upper landing comprises at least four of the tiers of different composition materials. Structure independent of method is disclosed.

Abstract: Methods of improving adhesion between a photoresist and conductive or insulating structures. The method comprises forming a slot through at least a portion of alternating conductive structures and insulating structures on a substrate. Portions of the conductive structures or of the insulating structures are removed to form recesses in the conductive structures or in the insulating structures. A photoresist is formed over the alternating conductive structures and insulating structures and within the slot. Methods of improving adhesion between a photoresist and a spin-on dielectric material are also disclosed, as well as methods of forming a staircase structure.

Abstract: A device comprises an array of elevationally-extending transistors and a circuit structure adjacent and electrically coupled to the elevationally-extending transistors of the array. The circuit structure comprises a stair step structure comprising vertically-alternating tiers comprising conductive steps that are at least partially elevationally separated from one another by insulative material. Operative conductive vias individually extend elevationally through one of the conductive steps at least to a bottom of the vertically-alternating tiers and individually electrically couple to an electronic component below the vertically-alternating tiers. Dummy structures individually extend elevationally through one of the conductive steps at least to the bottom of the vertically-alternating tiers. Methods are also disclosed.

Abstract: Methods of improving adhesion between a photoresist and conductive or insulating structures. The method comprises forming a slot through at least a portion of alternating conductive structures and insulating structures on a substrate. Portions of the conductive structures or of the insulating structures are removed to form recesses in the conductive structures or in the insulating structures. A photoresist is formed over the alternating conductive structures and insulating structures and within the slot. Methods of improving adhesion between a photoresist and a spin-on dielectric material are also disclosed, as well as methods of forming a staircase structure.