Abstract: An electro-optic modulator is a liquid-crystal-based electro-optical light modulator. The liquid-crystal-based electro-optical light modulator is fabricated using surface Micro-electromechanical Systems (MEMS) techniques. The electro-optical light modulator is used for inspecting flat panel displays or the like. Utilizing surface MEMS techniques for fabrication considerably thins the electro-optic modulator and allows the use of pure liquid crystal without the need for thick containment plates.

Abstract: An electro-optic modulator is disclosed with reduced switching voltage. The electro-optic modulator includes a modulator material film layer. The modulator material film layer includes a polymer matrix. Droplets of liquid crystals are dispersed within the polymer matrix. The liquid crystals are configured to modulate light transmissivity through the electro-optic modulator. Alkanes are dispersed within the droplets. The alkane additives reduce the switching voltage of the electro-optic modulator. n-decane and mineral oil compositions are experimentally demonstrated to reduce the switching voltage.

Abstract: An electro-optic modulator is disclosed. The electro-optic modulator includes a modulator material film layer. The modulator material film layer includes a polymer matrix. Liquid crystals and getter molecules are dispersed within the polymer matrix. The liquid crystals are configured to modulate light transmissivity through the electro-optic modulator. The getter molecules capture or coordinate with cationic impurities present within the polymer matrix. By gettering the cationic impurities, switching of the device at modulated low frequencies are improved as well as a reduction on the switching voltage of the device. Three classes of getter molecules have been so far demonstrated to work: inorganic ion traps (dihydrogen ammonium phosphate), organic cation traps (EDTA), and organic ion extractors (nicotinic acid). An amount for the getter molecules may be 0.01 to 1.0 percent by weight of the polymer matrix.

Abstract: An electro-optic modulator is a liquid-crystal-based electro-optical light modulator. The liquid-crystal-based electro-optical light modulator is fabricated using surface Micro-electromechanical Systems (MEMS) techniques. The electro-optical light modulator is used for inspecting flat panel displays or the like. Utilizing surface MEMS techniques for fabrication considerably thins the electro-optic modulator and allows the use of pure liquid crystal without the need for thick containment plates.

Abstract: A chalcogenide alloy that optimizes operating parameters of an ovonic threshold switch includes an atomic percentage of arsenic in the range of 9 to 39, an atomic percentage of germanium in the range of 10 and 40, an atomic percentage of silicon in the range of 5 and 18, an atomic percentage of nitrogen in the range of 0 and 10, and an alloy of sulfur, selenium, and tellurium. A ratio of sulfur to selenium in the range of 0.25 and 4, and a ration of sulfur to tellurium in the alloy of sulfur, selenium, and tellurium is in the range of 0.11 and 1.

Abstract: By making an ovonic threshold switch using a carbon interfacial layer having a thickness of less than or equal to ten percent of the thickness of the associated electrode, cycle endurance may be improved. In some embodiments, a glue layer may be used between the carbon and the chalcogenide of the ovonic threshold switch. The glue layer may be effective to improve adherence between carbon and chalcogenide.

Abstract: A method for making an integrated circuit is disclosed comprising depositing alternating regions of electrically conductive material and hybrid organic inorganic dielectric material on a substrate, wherein an area of dielectric material is formed by hydrolyzing a plurality of precursors to form a hybrid organic inorganic material comprised of a silicon oxide backbone and having an organic substituent bound to the backbone, and depositing the hybrid organic inorganic material on a substrate, removing the hybrid organic-inorganic material in selected areas, and depositing an electrically conductive material in the selected areas, wherein one of the precursors is a compound of the general formula R1R2R3SiR4, wherein R1, R2, R3 are each bound to the Si and are independently an aryl group, a cross linkable group, or an alkyl group having from 1-14 carbons, and wherein R4 is selected from the group consisting of an alkoxy group, an acyloxy group, an —OH group or a halogen.

Abstract: By making an ovonic threshold switch using a carbon interfacial layer having a thickness of less than or equal to ten percent of the thickness of the associated electrode, cycle endurance may be improved. In some embodiments, a glue layer may be used between the carbon and the chalcogenide of the ovonic threshold switch. The glue layer may be effective to improve adherence between carbon and chalcogenide.

Abstract: Thin films are disclosed that are suitable as dielectrics in IC's and for other similar applications. In particular, the invention concerns thin films comprising compositions obtainable by hydrolysis of two or more silicon compounds, which yield an at least partially cross-linked siloxane structure. The invention also concerns a method for producing such films by preparing siloxane compositions by hydrolysis of suitable reactants, by applying the hydrolyzed compositions on a substrate in the form of a thin layer and by curing the layer to form a film. In one example, a thin film comprising a composition is obtained by hydrolyzing a monomeric silicon compound having at least one hydrocarbyl radical, containing an unsaturated carbon-to-carbon bond, and at least one hydrolyzable group attached to the silicon atom of the compound with another monomeric silicon compound having at least one aryl group and at least one hydrolyzable group attached to the silicon atom of the compound to form a siloxane material.

Abstract: A method for making an integrated circuit is disclosed as comprising depositing alternating regions of electrically conductive and dielectric materials on a substrate, wherein an area of dielectric material is formed by: a silane precursor having a fully or partially fluorinated first organic group comprising an unsaturated carbon-carbon double bond, the fully or partially fluorinated organic group bound to silicon in the silane precursor; forming from the silane precursor a hybrid organic-inorganic material having a molecular weight of at least 500 on a substrate; and increasing the molecular weight of the hybrid material by exposure to heat, electromagnetic radiation or electron beam so as to break the unsaturated carbon-carbon double bond and cross link via the fully or partially fluorinated organic group.

Abstract: A micro-electromechanical device is formed on a substrate. The device has sliding, abrading or impacting surfaces. At least one of these surfaces is covered with an anti-stiction material. The anti-stiction material is provided from a slicon compound precursor (e.g. silane, silanol) or multiple silicon compound precursors. Preferably the precursor(s) is fluorinated—more preferably perfluorinated, and is deposited with a solvent as a low molecular weight oligomer or in monomeric form. Examples include silanes (fluorinated or not) with aromatic or polycyclic ring sturctures, and/or silanes (fluorinated or not) having alkenyl, alkynyl, epoxy or acrylate groups. Mixtures either or both of these groups with alkyl chain silanes (preferably fluorinated) are also contemplated.

Abstract: A method for making an integrated circuit is disclosed as comprising depositing alternating regions of electrically conductive and dielectric materials on a substrate, wherein an area of dielectric material is formed by: a silane precursor having a fully or partially fluorinated first organic group comprising an unsaturated carbon-carbon double bond, the fully or partially fluorinated organic group bound to silicon in the silane precursor; forming from the silane precursor a hybrid organic-inorganic material having a molecular weight of at least 500 on a substrate; and increasing the molecular weight of the hybrid material by exposure to heat, electromagnetic radiation or electron beam so as to break the unsaturated carbon-carbon double bond and cross link via the fully or partially fluorinated organic group.

Abstract: MEMS devices are provided that are capable of movement due to a flexible portion formed of unique materials for this purpose. The MEMS device can have a flexible portion formed of a nitride or oxynitride of at least one transition metal, and formed of a nitride or oxynitride of at least one metalloid or near metalloid; a flexible portion formed of a single transition metal nitride or oxynitride and in the absence of any other metal or metalloid nitrides; a flexible portion formed of one or more late transition metal nitrides or oxynitrides; a flexible portion formed of a single transition metal in nitride form, and an additional metal substantially in elemental form; or a flexible portion formed of at least one metalloid nitride or oxynitride. The MEMS devices can be any device, though preferably one with a flexible portion such as an accelerometer, DC relay or RF switch, optical cross connect or optical switch, or micromirror arrays for direct view and projection displays. The flexible portion (e.g.

Abstract: An integrated circuit is provided comprising a substrate and discrete areas of electrically insulating and electrically conductive material, wherein the electrically insulating material is a hybrid organic-inorganic material that has a density of 1.45 g/cm3 or more and a dielectric constant of 3.0 or less. The integrated circuit can be made by a method comprising: providing a substrate; forming discrete areas of electrically insulating and electrically conductive material on the substrate; wherein the electrically insulating material is deposited on the substrate followed by heating at a temperature of 350° C. or less; and wherein the electrically insulating material is a hybrid organic-inorganic material that has a density of 1.45 g/cm3 or more after densification. Also disclosed is a method for making an integrated circuit comprising performing a dual damascene method with an electrically conductive material and a dielectric, the dielectric being a directly photopatterned hybrid organic-inorganic material.

Abstract: Micromechanical devices are provided that are capable of movement due to a flexible portion. The micromechanical device can have a flexible portion formed of a nitride of preferably an element from groups 3A to 6A of the periodic table (preferably from the first two rows of these groups) and a late transition metal (preferably from groups 8B or 1B of the periodic table). The micromechanical devices can be any device, particularly MEMS sensors or actuators preferably having a flexible portion such as an accelerometer, DC relay or RF switch, optical cross connect or optical switch, or a micromirror part of an array for direct view and projection displays. The flexible portion is preferably formed by sputtering a target having a group 8B or 1B element and a group 3A to 6A element. The target can have other major constituents or impurities (e.g. additional group 3A to 6A element(s)). The target is reactively sputtered in a nitrogen ambient so as to result in a sputtered hinge.

Abstract: Micromechanical devices are provided that are capable of movement due to a flexible portion. The micromechanical device can have a flexible portion formed of an oxide of preferably an element from groups 3A to 6A of the periodic table (preferably from the first two rows of these groups) and a late transition metal (preferably from groups 8B or 1B of the periodic table). The micromechanical devices can be any device, particularly MEMS sensors or actuators preferably having a flexible portion such as an accelerometer, DC relay or RF switch, optical cross connect or optical switch, or a micromirror part of an array for direct view and projection displays. The flexible portion is preferably formed by sputtering a target having a group 8B or 1B element and a selected group 3A to 6A element, namely B, Al, In, Si, Ge, Sn, or Pb. The target can have other major constituents or impurities (e.g. additional group 3A to 6A element(s)).

Abstract: Thin films are disclosed that are suitable as dielectrics in IC's and for other similar applications. In particular, the invention concerns thin films comprising compositions obtainable by hydrolysis of two or more silicon compounds, which yield an at least partially cross-linked siloxane structure. The invention also concerns a method for producing such films by preparing siloxane compositions by hydrolysis of suitable reactants, by applying the hydrolyzed compositions on a substrate in the form of a thin layer and by curing the layer to form a film. In one example, a thin film comprising a composition is obtained by hydrolyzing a monomeric silicon compound having at least one hydrocarbyl radical, containing an unsaturated carbon-to-carbon bond, and at least one hydrolyzable group attached to the silicon atom of the compound with another monomeric silicon compound having at least one aryl group and at least one hydrolyzable group attached to the silicon atom of the compound to form a siloxane material.

Abstract: A method for making a spatial light modulator is disclosed, that comprises forming an array of micromirrors each having a hinge and a micromirror plate held via the hinge on a substrate, the micromirror plate being disposed in a plane separate from the hinge and having a hinge made of a transition metal nitride, followed by releasing the micromirrors in a spontaneous gas phase chemical etchant. Also disclosed is a projection system that comprises such a spatial light modulator, as well as a light source, condensing optics, wherein light from the light source is focused onto the array of micromirrors, projection optics for projecting light selectively reflected from the array of micromirrors onto a target, and a controller for selectively actuating the micromirrors in the array.

Abstract: A method comprises depositing an organic material on a substrate; depositing additional material different from the organic material after depositing the organic material; and removing the organic material with a compressed fluid. Also disclosed is a method comprising: providing an organic layer on a substrate; after providing the organic layer, providing one or more layers of a material different than the organic material of the organic layer; removing the organic layer with a compressed fluid; and providing an anti-stiction agent with a compressed fluid to material remaining after removal of the organic layer.

Abstract: A method for making an integrated circuit is disclosed as comprising depositing alternating regions of electrically conductive and dielectric materials on a substrate, wherein an area of dielectric material is formed by: a silane precursor having a fully or partially fluorinated first organic group comprising an unsaturated carbon-carbon double bond, the fully or partially fluorinated organic group bound to silicon in the silane precursor; forming from the silane precursor a hybrid organic-inorganic material having a molecular weight of at least 500 on a substrate; and increasing the molecular weight of the hybrid material by exposure to heat, electromagnetic radiation or electron beam so as to break the unsaturated carbon-carbon double bond and cross link via the fully or partially fluorinated organic group.