Abstract: The disclosure provides an insulated metal substrate (IMS) including a substrate having a first side and a second side. The IMS may also include a first dielectric layer on the first side of the substrate. The dielectric layer may include a metal-based oxynitride and/or a metalloid-based oxynitride layer, oxygen is from 0.1 at % to 49.9 at %, nitrogen is from 0.1 at % to 49.9 at % and a sum of oxygen and nitrogen is about 50 at %. The first dielectric layer comprises a material selected from a group consisting of aluminum oxynitride (AlON), aluminum oxyhydronitride (AlHON), aluminum oxycarbonitride (AlCON), SiGeON, GaON, SiON, and GeON. The substrate comprises one of Cu, Al, AlSi, C—Al, W—Cu, or Ti.

Abstract: Methods and systems are provided for allocating monitoring resources of a mobile device based on information received at the mobile device. A plurality of outdoor regions and a plurality of indoor regions associated with a geographic area may be stored on the mobile device. Additionally, a determination may be made whether the mobile device is outside of each of the plurality of outdoor regions. Additionally, monitoring resources of the mobile device may be allocated in a first mode or a second mode based on the determination whether the mobile device is outside of each of the plurality of outdoor regions.

Abstract: A technique includes receiving data representing an output of a security scan of an application and an audit of the security scan by a human auditor. The output represents a security issue with the application, which is identified by the security scan, and the audit represents an analysis of the security issue by the human auditor. The technique includes training a security scan classifier to learn a classification preference of the human auditor. Training the security scan classifier includes, processing the data in a processor-based machine to, based at least in part on the output of the security scan and the analysis of the security scan by the human auditor, learn the classification preference of the human auditor to the issue to build a classification model for the issue.

Abstract: A technique includes receiving data representing an output of a security scan of an application and an audit of the security scan by a human auditor. The output represents a security issue with the application, which is identified by the security scan, and the audit represents an analysis of the security issue by the human auditor. The technique includes training a security scan classifier to learn a classification preference of the human auditor. Training the security scan classifier includes, processing the data in a processor-based machine to, based at least in part on the output of the security scan and the analysis of the security scan by the human auditor, learn the classification preference of the human auditor to the issue to build a classification model for the issue.

Abstract: The disclosure provides an insulated metal substrate (IMS) including a substrate having a first side and a second side. The IMS may also include a first dielectric layer on the first side of the substrate. The dielectric layer may include a metal-based oxynitride and/or a metalloid-based oxynitride layer, oxygen is from 0.1 at % to 49.9 at %, nitrogen is from 0.1 at % to 49.9 at % and a sum of oxygen and nitrogen is about 50 at %. The first dielectric layer comprises a material selected from a group consisting of aluminum oxynitride (AION), aluminum oxyhydronitride (AIHON), aluminum oxycarbonitride (AICON), SiGeON, GaON, SiON, and GeON. The substrate comprises one of Cu, Al, AISi, C-AI, W—Cu, or Ti.

Abstract: A technique includes receiving issue data, which represents an issue identified by a security scan of an application and attributes of the issue. The technique includes applying a machine classifier to the issue data to prioritize the issue; based at least in part on a human audit of the classified data, generating additional issue data representing a priority correction for the issue; and retraining the classifier based on the additional issue data.

Abstract: Methods and systems are provided for allocating monitoring resources of a mobile device based on information received at the mobile device. A plurality of outdoor regions and a plurality of indoor regions associated with a geographic area may be stored on the mobile device. Additionally, a determination may be made whether the mobile device is outside of each of the plurality of outdoor regions. Additionally, monitoring resources of the mobile device may be allocated in a first mode or a second mode based on the determination whether the mobile device is outside of each of the plurality of outdoor regions.

Abstract: The present disclosure generally relates to systems and methods for growing group III-V nitride crystals. In particular the systems and methods include diffusing constituent species of the crystals through a porous body composed of the constituent species, where the species freely nucleate to grow large nitride crystals.

Abstract: A method of analyzing target software for security vulnerabilities comprises, with a processor, scanning a codebase of a target software using a static analysis scan to identify a number of security flaws, and calculating a number of code metrics of the codebase of the target software for a number of iterations over a period of time to obtain a number of historical scans.

Abstract: The present disclosure generally relates to systems and methods for growing group III-V nitride crystals. In particular the systems and methods include diffusing constituent species of the crystals through a porous body composed of the constituent species, where the species freely nucleate to grow large nitride crystals.

Abstract: A method of analyzing target software for security vulnerabilities comprises, with a processor, scanning a codebase of a target software using a static analysis scan to identify a number of security flaws, and calculating a number of code metrics of the codebase of the target software for a number of iterations over a period of time to obtain a number of historical scans.

Abstract: The present disclosure generally relates to systems and methods for growing and preferentially volumetrically enhancing group III-V nitride crystals. In particular the systems and methods include diffusing constituent species of the crystals through a porous body composed of the constituent species, where the species freely nucleate to grow large nitride crystals. The systems and methods further include using thermal gradients and/or chemical driving agents to enhance or limit crystal growth in one or more planes.

Abstract: The present disclosure generally relates to systems and methods for growing group III-V nitride crystals. In particular the systems and methods include diffusing constituent species of the crystals through a porous body composed of the constituent species, where the species freely nucleate to grow large nitride crystals.

Abstract: The disclosure provides a device and method used to produce a tubular structure made of a refractory metal compound. In particular, the disclosure provides a device and method used to produce a tubular structure made of a refractory metal compound by reacting a green tubular structure made of a refractory metal with at least one reactive gas.

Abstract: The disclosure provides a process to anneal group III-V metal nitride crystals, wafers, epitaxial layers, and epitaxial films to reduce nitrogen vacancies. In particular, the disclosure provides a process to perform slow annealing of the group III-V metal nitrides in a high temperature and high pressure environment.

Abstract: The disclosure provides a device and method used to produce bulk single crystals. In particular, the disclosure provides a device and method used to produce bulk single crystals of a metal compound by an elemental reaction of a metal vapor and a reactant gas by an elemental reaction of a metal vapor and a reactant gas.

Abstract: The disclosure provides a device and method used to produce a tubular structure made of a refractory metal compound. In particular, the disclosure provides a device and method used to produce a tubular structure made of a refractory metal compound by reacting a green tubular structure made of a refractory metal with at least one reactive gas.

Abstract: The disclosure provides a process to anneal group III-V metal nitride crystals, wafers, epitaxial layers, and epitaxial films to reduce nitrogen vacancies. In particular, the disclosure provides a process to perform slow annealing of the group III-V metal nitrides in a high temperature and high pressure environment.

Abstract: The disclosure provides a device and method used to produce a tubular structure made of a refractory metal compound. In particular, the disclosure provides a device and method used to produce a tubular structure made of a refractory metal compound by reacting a green tubular structure made of a refractory metal with at least one reactive gas.

Abstract: The disclosure provides a device and method used to produce bulk single crystals. In particular, the disclosure provides a device and method used to produce bulk single crystals of a metal compound by an elemental reaction of a metal vapor and a reactant gas by an elemental reaction of a metal vapor and a reactant gas.