Abstract: A polishing pad for chemical mechanical polishing comprises a polishing layer and an adjacent subpad layer. The polishing layer includes a polishing surface, a polishing layer interface surface opposite the polishing surface, a polishing layer thickness extending from the polishing surface to the polishing layer interface surface, and recesses extending from the polishing layer surface toward the polishing layer interface surface. A depth of the recesses is at least 80% the polishing layer thickness. The subpad layer has a subpad interface surface adjacent to the polishing layer interface surface and a bottom surface opposite the subpad interface surface. The subpad layer has a thermal conductivity of 1 to 35 Watts/m-K. The combination of the deep grooves in the top layer and the thermal conductivity of the subpad layer can facilitate thermal management at the polishing interface during polishing of a substrate.

Abstract: A polishing pad for chemical mechanical polishing comprises a polishing layer and a subpad. The polishing layer has a polishing surface and a polishing layer interface surface opposite the polishing surface and comprises a polishing material. The subpad layer has a subpad interface surface adjacent to the polishing layer interface surface and a bottom surface opposite the subpad interface surface, and comprises a subpad material. The subpad layer has an average elastic modulus under compression at pressures of from 24 to less than 48 kPa of 1 to 5 MPa and an average elastic modulus under compression at pressures of 48 to 76 kPa of 5 to 20 MPa and a true strain of less than or equal to 10% over compression pressures of up to 1.2 MPa.

Abstract: According to various aspects, exemplary embodiments are provided of thermal interface material assemblies. In one exemplary embodiment, a thermal interface material assembly generally includes a thermal interface material having a first side and a second side and a metallization layer having a layer thickness of about 0.0005 inches or less. The metallization layer is disposed along at least a portion of the first side of the thermal interface material.

Abstract: According to various aspects, exemplary embodiments are provided of thermal interface material assemblies. In one exemplary embodiment, a thermal interface material assembly generally includes a thermal interface material having a first side and a second side and a metallization layer having a layer thickness of about 0.0005 inches or less. The metallization layer is disposed along at least a portion of the first side of the thermal interface material.

Abstract: The thermal interface structure of the present invention is suited for use in a non-referenced die system between a heat source and heat sink spaced up to 300 mils apart and comprises a plurality of layers including a core body of high conductivity metal or metal alloy having opposite sides, a soft thermal interface layer disposed on one side of the core body for mounting against the heat sink and a thin layer of a phase change material disposed on the opposite side of the core body for mounting against the heat source wherein the surface area dimension (footprint) of the core body is substantially larger than the surface area of the heat source upon which the phase change material is mounted to minimize the thermal resistance between the heat source and the heat sink and wherein said soft thermal interface layer is of a thickness sufficient to accommodate a variable spacing between the heat source and the heat sink of up to 300 mils.

Abstract: A thermal interface assembly and method for forming a thermal interface between a microelectronic component package and a heat sink having a total thermal resistance of no greater than about 0.03° C.-in2/W comprising interposing a thermal interface assembly between an microelectronic component package and heat sink with the thermal interface assembly comprising a thermal interface material having phase change properties and a sealing member selected from the group consisting of an o-ring and/or shim in an arrangement such that the thermal interface material is shielded from the atmosphere when the microelectronic component package is operational.

Abstract: The thermal interface structure of the present invention is suited for use in a non-referenced die system between a heat source and heat sink spaced up to 300 mils apart and comprises a plurality of layers including a core body of high conductivity metal or metal alloy having opposite sides, a soft thermal interface layer disposed on one side of the core body for mounting against the heat sink and a thin layer of a phase change material disposed on the opposite side of the core body for mounting against the heat source wherein the surface area dimension (footprint) of the core body is substantially larger than the surface area of the heat source upon which the phase change material is mounted to minimize the thermal resistance between the heat source and the heat sink and wherein said soft thermal interface layer is of a thickness sufficient to accommodate a variable spacing between the heat source and the heat sink of up to 300 mils.

Abstract: A heat sink and heat spreader assembly including a solid member of a conductive material and a layer of a low melting alloy having phase change properties bonded to at least one surface of the solid member such that a welded joint is formed there between possessing a thickness of from 0.0001 to 0.020 inches and having a composition consisting essentially of said low melting alloy with the welded joint having an exposed relatively flat surface suitable for direct attachment to an electronic heat source or heat sink respectively.