Abstract: A coatable resin solution capable of forming a coating when applied to the surface of a substrate that is photo-patternable and developable as a dielectric material upon exposure to ultraviolet radiation is provided. The resin solution comprises a silsequioxane-based (SSQ-based) resin, at least one initiator, and an organic solvent. The SSQ-based resin includes both a hydride component and at least one photo-curable component. The resulting coating exhibits a dielectric constant that is less than or equal to about 3.5.

Abstract: A method of preparing a DIABS-based silsesquioxane resin for use in an antireflective hard-mask coating for photolithography is provided. Methods of preparing an antireflective coating from the DIABS-based silsesquioxane resin and using said antireflective coating in photolithography is alternatively presented. The DIABS-based silsequioxane resin has structural units formed from the hydrolysis and condensation of silane monomers including di-t-butoxydiacetoxysilane (DIABS) and at least one selected from the group of R1 SiX3, R2SiX3, R3SiX3, and SiX4 with water; wherein R1 is H or an alkyl group, X is a halide or an alkoxy group, R2 is a chromophore moiety, and R3 is a reactive site or crosslinking site. The DIABS-based silsesqioxane resin is characterized by the presence of at least one tetra-functional SiO4/2 unit formed via the hydrolysis of di-t-butoxydiacetoxysilane (DIABS).

Abstract: A coatable resin solution capable of forming a coating when applied to the surface of a substrate that is photo-patternable and developable as a dielectric material upon exposure to ultraviolet radiation is provided. The resin solution comprises a silsequioxane-based (SSQ-based) resin, at least one initiator, and an organic solvent. The SSQ-based resin includes both a hydride component and at least one photo-curable component. The resulting coating exhibits a dielectric constant that is less than or equal to about 3.5.

Abstract: An antireflective coating compositions comprising (I) a silsesquioxane resin (II) a compound selected from photo-acid generators and thermal acid generators; and (III) a solvent wherein in the silsesquioxane resin contains a carboxylic acid forming group or a sulfuric acid forming group.

Abstract: An antireflective coating compositions comprising (I) a silsesquioxane resin (II) a compound selected from photo-acid generators and thermal acid generators; and (III) a solvent wherein in the silsesquioxane resin contains a carboxylic acid forming group or a sulfuric acid forming group.