Abstract: A method for maintaining a fluidic dispensing device includes providing a fluidic dispensing device having a fluid reservoir containing fluid, the fluid reservoir being defined in part by a base wall, and having a stir bar located in the fluid reservoir adjacent to the base wall, and having a fluid ejection chip having a fluid ejection direction; positioning the fluidic dispensing device at a predetermined orientation, wherein the fluid ejection direction is oriented in a range of upward vertical, plus or minus 90 degrees; and rotating the stir bar in a first rotational direction starting with a first rotational speed and increasing rotational velocity from the first rotational speed to a second rotational speed.

Abstract: A fluidic dispensing device includes a housing having a chamber that defines an interior space, and has an inlet port and an outlet port. A flow control portion has a flow separator feature. The flow separator feature is positioned adjacent the inlet port. A stir bar is located in the chamber, has a rotational axis, and has a plurality of paddles, with each paddle having a free end tip. The stir bar has a stir bar radius from the rotational axis to the free end tip. A guide portion confines the stir bar in a predetermined portion of the interior space of the chamber. A ratio of the stir bar radius and a clearance distance between the free end tip and the flow control portion is 5:2 to 5:0.025.

Abstract: A method for maintaining a fluidic dispensing device includes providing a fluidic dispensing device having a fluid reservoir containing fluid, the fluid reservoir being defined in part by a base wall, and having a stir bar located in the fluid reservoir adjacent to the base wall, and having a fluid ejection chip having a fluid ejection direction; positioning the fluidic dispensing device at a predetermined orientation, wherein the fluid ejection direction is oriented in a range of upward vertical, plus or minus 90 degrees; and rotating the stir bar in a first rotational direction starting with a first rotational speed and increasing rotational velocity from the first rotational speed to a second rotational speed.

Abstract: A fluidic dispensing device includes a housing having a chamber that defines an interior space, and has an inlet port and an outlet port. A flow control portion has a flow separator feature. The flow separator feature is positioned adjacent the inlet port. A stir bar is located in the chamber, has a rotational axis, and has a plurality of paddles, with each paddle having a free end tip. The stir bar has a stir bar radius from the rotational axis to the free end tip. A guide portion confines the stir bar in a predetermined portion of the interior space of the chamber. A ratio of the stir bar radius and a clearance distance between the free end tip and the flow control portion is 5:2 to 5:0.025.

Abstract: A fluidic dispensing device includes a housing having an exterior wall and a chamber. The exterior wall has a chip mounting surface defining a first plane and has an opening. The chamber has a port coupled in fluid communication with the opening. An ejection chip is mounted to the chip mounting surface and is oriented along the first plane, and is in fluid communication with the opening. The ejection chip has a fluid ejection direction that is substantially orthogonal to the first plane. A stir bar is located in the chamber, and has a rotational axis. The rotational axis of the stir bar is oriented in an angular range of perpendicular, plus or minus 45 degrees, relative to the fluid ejection direction.

Abstract: A method of etching a semiconductor substrate. The method includes the steps of applying a photoresist etch mask layer to a device surface of the substrate. A select first area of the photoresist etch mask is masked, imaged and developed. A select second area of the photoresist etch mask layer is irradiated to assist in post etch stripping of the etch mask layer from the select second area. The substrate is etched to form fluid supply slots through a thickness of the substrate. At least the select second area of the etch mask layer is removed from the substrate, whereby mask layer residue formed from the select second area of the etch mask layer is significantly reduced.

Abstract: A method for improving fluidic flow for a microfluidic device having a through hole or slot therein. The method includes the steps of forming one or more openings through at least part of a thickness of a substrate from a first surface to an opposite second surface using a reactive ion etching process whereby an etch stop layer is applied to side wall surfaces in the one or more openings during alternating etching and passivating steps as the openings are etched through at least a portion of the substrate. Substantially all of the etch stop layer coating is removed from the side wall surfaces by treating the side wall surfaces using a method selected from chemical treatment and mechanical treatment, whereby a surface energy of the treated side wall surfaces is increased relative to a surface energy of the side wall surfaces containing the etch stop layer coating.

Abstract: A method of etching a semiconductor substrate. The method includes the steps of applying a photoresist etch mask layer to a device surface of the substrate. A select first area of the photoresist etch mask is masked, imaged and developed. A select second area of the photoresist etch mask layer is irradiated to assist in post etch stripping of the etch mask layer from the select second area. The substrate is etched to form fluid supply slots through a thickness of the substrate. At least the select second area of the etch mask layer is removed from the substrate, whereby mask layer residue formed from the select second area of the etch mask layer is significantly reduced.

Abstract: A method for improving fluidic flow for a microfluidic device having a through hole or slot therein. The method includes the steps of forming one or more openings through at least part of a thickness of a substrate from a first surface to an opposite second surface using a reactive ion etching process whereby an etch stop layer is applied to side wall surfaces in the one or more openings during alternating etching and passivating steps as the openings are etched through at least a portion of the substrate. Substantially all of the etch stop layer coating is removed from the side wall surfaces by treating the side wall surfaces using a method selected from chemical treatment and mechanical treatment, whereby a surface energy of the treated side wall surfaces is increased relative to a surface energy of the side wall surfaces containing the etch stop layer coating.