Patents by Inventor Jason Y. Wu
Jason Y. Wu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11985832Abstract: A device includes, in a first region, a first conductive interconnect, an electrode structure on the first conductive interconnect, where the electrode structure includes a first conductive hydrogen barrier layer and a first conductive fill material. A trench capacitor including a ferroelectric material or a paraelectric material is on the electrode structure. A second dielectric includes an amorphous, greater than 90% film density hydrogen barrier material laterally surrounds the memory device. A via electrode including a second conductive hydrogen barrier material is on at least a portion of the memory device. A second region includes a conductive interconnect structure embedded within a less than 90% film density dielectric material.Type: GrantFiled: December 15, 2021Date of Patent: May 14, 2024Assignee: Kepler Computing Inc.Inventors: Somilkumar J. Rathi, Noriyuki Sato, Niloy Mukherjee, Rajeev Kumar Dokania, Amrita Mathuriya, Tanay Gosavi, Pratyush Pandey, Jason Y. Wu, Sasikanth Manipatruni
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Patent number: 11961877Abstract: A device includes, in a first region, a first conductive interconnect, an electrode structure on the first conductive interconnect, where the electrode structure includes a first conductive hydrogen barrier layer and a first conductive fill material. A trench capacitor including a ferroelectric material or a paraelectric material is on the electrode structure. A second dielectric includes an amorphous, greater than 90% film density hydrogen barrier material laterally surrounds the memory device. A via electrode including a second conductive hydrogen barrier material is on at least a portion of the memory device. A second region includes a conductive interconnect structure embedded within a less than 90% film density dielectric material.Type: GrantFiled: December 14, 2021Date of Patent: April 16, 2024Assignee: KEPLER COMPUTING INC.Inventors: Somilkumar J. Rathi, Noriyuki Sato, Niloy Mukherjee, Rajeev Kumar Dokania, Amrita Mathuriya, Tanay Gosavi, Pratyush Pandey, Jason Y. Wu, Sasikanth Manipatruni
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Patent number: 11955512Abstract: A device includes, in a first region, a first conductive interconnect, an electrode structure on the first conductive interconnect, where the electrode structure includes a first conductive hydrogen barrier layer and a first conductive fill material. A trench capacitor including a ferroelectric material or a paraelectric material is on the electrode structure. A second dielectric includes an amorphous, greater than 90% film density hydrogen barrier material laterally surrounds the memory device. A via electrode including a second conductive hydrogen barrier material is on at least a portion of the memory device. A second region includes a conductive interconnect structure embedded within a less than 90% film density dielectric material.Type: GrantFiled: December 15, 2021Date of Patent: April 9, 2024Assignee: Kepler Computing Inc.Inventors: Somilkumar J. Rathi, Noriyuki Sato, Niloy Mukherjee, Rajeev Kumar Dokania, Amrita Mathuriya, Tanay Gosavi, Pratyush Pandey, Jason Y. Wu, Sasikanth Manipatruni
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Patent number: 11908704Abstract: A memory device includes a first electrode comprising a first conductive nonlinear polar material, where the first conductive nonlinear polar material comprises a first average grain length. The memory device further includes a dielectric layer comprising a perovskite material on the first electrode, where the perovskite material includes a second average grain length. A second electrode comprising a second conductive nonlinear polar material is on the dielectric layer, where the second conductive nonlinear polar material includes a third grain average length that is less than or equal to the first average grain length or the second average grain length.Type: GrantFiled: February 1, 2022Date of Patent: February 20, 2024Assignee: KEPLER COMPUTING INC.Inventors: Niloy Mukherjee, Somilkumar J. Rathi, Jason Y. Wu, Pratyush Pandey, Zeying Ren, Fnu Atiquzzaman, Gabriel Antonio Paulius Velarde, Noriyuki Sato, Mauricio Manfrini, Tanay Gosavi, Rajeev Kumar Dokania, Amrita Mathuriya, Ramamoorthy Ramesh, Sasikanth Manipatruni
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Patent number: 11894417Abstract: A memory device includes a first electrode comprising a first conductive nonlinear polar material, where the first conductive nonlinear polar material comprises a first average grain length. The memory device further includes a dielectric layer comprising a perovskite material on the first electrode, where the perovskite material includes a second average grain length. A second electrode comprising a second conductive nonlinear polar material is on the dielectric layer, where the second conductive nonlinear polar material includes a third grain average length that is less than or equal to the first average grain length or the second average grain length.Type: GrantFiled: February 3, 2022Date of Patent: February 6, 2024Assignee: KEPLER COMPUTING INC.Inventors: Niloy Mukherjee, Somilkumar J. Rathi, Jason Y. Wu, Pratyush Pandey, Zeying Ren, FNU Atiquzzaman, Gabriel Antonio Paulius Velarde, Noriyuki Sato, Mauricio Manfrini, Tanay Gosavi, Rajeev Kumar Dokania, Amrita Mathuriya, Ramamoorthy Ramesh, Sasikanth Manipatruni
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Patent number: 11832451Abstract: Non lead-based perovskite ferroelectric devices for high density memory and logic applications and methods of fabrication are described. While various embodiments are described with reference to FeRAM, capacitive structures formed herein can be used for any application where a capacitor is desired. For example, the capacitive structure can be used for fabricating ferroelectric based or paraelectric based majority gate, minority gate, and/or threshold gate.Type: GrantFiled: August 6, 2021Date of Patent: November 28, 2023Assignee: KEPLER COMPUTING INC.Inventors: Debraj Guhabiswas, Maria Isabel Perez, Jason Y. Wu, James David Clarkson, Gabriel Antonio Paulius Velarde, Niloy Mukherjee, Noriyuki Sato, Amrita Mathuriya, Sasikanth Manipatruni, Ramamoorthy Ramesh
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Patent number: 11769790Abstract: A memory device includes a first electrode comprising a first conductive nonlinear polar material, where the first conductive nonlinear polar material comprises a first average grain length. The memory device further includes a dielectric layer comprising a perovskite material on the first electrode, where the perovskite material includes a second average grain length. A second electrode comprising a second conductive nonlinear polar material is on the dielectric layer, where the second conductive nonlinear polar material includes a third grain average length that is less than or equal to the first average grain length or the second average grain length.Type: GrantFiled: February 1, 2022Date of Patent: September 26, 2023Assignee: KEPLER COMPUTING INC.Inventors: Niloy Mukherjee, Somilkumar J. Rathi, Jason Y. Wu, Pratyush Pandey, Zeying Ren, Fnu Atiquzzaman, Gabriel Antonio Paulius Velarde, Noriyuki Sato, Mauricio Manfrini, Tanay Gosavi, Rajeev Kumar Dokania, Amrita Mathuriya, Ramamoorthy Ramesh, Sasikanth Manipatruni
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Publication number: 20230298905Abstract: A memory device includes a first electrode comprising a first conductive nonlinear polar material, where the first conductive nonlinear polar material comprises a first average grain length. The memory device further includes a dielectric layer comprising a perovskite material on the first electrode, where the perovskite material includes a second average grain length. A second electrode comprising a second conductive nonlinear polar material is on the dielectric layer, where the second conductive nonlinear polar material includes a third grain average length that is less than or equal to the first average grain length or the second average grain length.Type: ApplicationFiled: February 1, 2022Publication date: September 21, 2023Applicant: Kepler Computing Inc.Inventors: Niloy Mukherjee, Somilkumar J. Rathi, Jason Y. Wu, Pratyush Pandey, Zeying Ren, FNU Atiquzzaman, Gabriel Antonio Paulius Velarde, Noriyuki Sato, Mauricio Manfrini, Tanay Gosavi, Rajeev Kumar Dokania, Amrita Mathuriya, Ramamoorthy Ramesh, Sasikanth Manipatruni
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Patent number: 11744081Abstract: Described are ferroelectric device film stacks which include a templating or texturing layer or material deposited below a ferroelectric layer, to enable a crystal lattice of the subsequently deposited ferroelectric layer to template off this templating layer and provide a large degree of preferential orientation despite the lack of epitaxial substrates.Type: GrantFiled: May 7, 2021Date of Patent: August 29, 2023Assignee: Kepler Computing Inc.Inventors: Niloy Mukherjee, Ramamoorthy Ramesh, Sasikanth Manipatruni, James Clarkson, FNU Atiquzzaman, Gabriel Antonio Paulius Velarde, Jason Y. Wu
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Publication number: 20230246063Abstract: A memory device includes a first electrode comprising a first conductive nonlinear polar material, where the first conductive nonlinear polar material comprises a first average grain length. The memory device further includes a dielectric layer comprising a perovskite material on the first electrode, where the perovskite material includes a second average grain length. A second electrode comprising a second conductive nonlinear polar material is on the dielectric layer, where the second conductive nonlinear polar material includes a third grain average length that is less than or equal to the first average grain length or the second average grain length.Type: ApplicationFiled: February 1, 2022Publication date: August 3, 2023Applicant: Kepler Computing Inc.Inventors: Niloy Mukherjee, Somilkumar J. Rathi, Jason Y. Wu, Pratyush Pandey, Zeying Ren, FNU Atiquzzaman, Gabriel Antonio Paulius Velarde, Noriyuki Sato, Mauricio Manfrini, Tanay Gosavi, Rajeev Kumar Dokania, Amrita Mathuriya, Ramamoorthy Ramesh, Sasikanth Manipatruni
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Publication number: 20230246064Abstract: A memory device includes a first electrode comprising a first conductive nonlinear polar material, where the first conductive nonlinear polar material comprises a first average grain length. The memory device further includes a dielectric layer comprising a perovskite material on the first electrode, where the perovskite material includes a second average grain length. A second electrode comprising a second conductive nonlinear polar material is on the dielectric layer, where the second conductive nonlinear polar material includes a third grain average length that is less than or equal to the first average grain length or the second average grain length.Type: ApplicationFiled: February 3, 2022Publication date: August 3, 2023Applicant: Kepler Computing Inc.Inventors: Niloy Mukherjee, Somilkumar J. Rathi, Jason Y. Wu, Pratyush Pandey, Zeying Ren, FNU Atiquzzaman, Gabriel Antonio Paulius Velarde, Noriyuki Sato, Mauricio Manfrini, Tanay Gosavi, Rajeev Kumar Dokania, Amrita Mathuriya, Ramamoorthy Ramesh, Sasikanth Manipatruni
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Publication number: 20230246062Abstract: A memory device includes a first electrode comprising a first conductive nonlinear polar material, where the first conductive nonlinear polar material comprises a first average grain length. The memory device further includes a dielectric layer comprising a perovskite material on the first electrode, where the perovskite material includes a second average grain length. A second electrode comprising a second conductive nonlinear polar material is on the dielectric layer, where the second conductive nonlinear polar material includes a third grain average length that is less than or equal to the first average grain length or the second average grain length.Type: ApplicationFiled: January 31, 2022Publication date: August 3, 2023Applicant: Kepler Computing Inc.Inventors: Niloy Mukherjee, Somilkumar J. Rathi, Jason Y. Wu, Pratyush Pandey, Zeying Ren, FNU Atiquzzaman, Gabriel Antonio Paulius Velarde, Noriyuki Sato, Mauricio Manfrini, Tanay Gosavi, Rajeev Kumar Dokania, Amrita Mathuriya, Ramamoorthy Ramesh, Sasikanth Manipatruni
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Patent number: 11716858Abstract: Described are ferroelectric device film stacks which include a templating or texturing layer or material deposited below a ferroelectric layer, to enable a crystal lattice of the subsequently deposited ferroelectric layer to template off this templating layer and provide a large degree of preferential orientation despite the lack of epitaxial substrates.Type: GrantFiled: May 7, 2021Date of Patent: August 1, 2023Assignee: Kepler Computing Inc.Inventors: Niloy Mukherjee, Ramamoorthy Ramesh, Sasikanth Manipatruni, James Clarkson, Fnu Atiquzzaman, Gabriel Antonio Paulius Velarde, Jason Y. Wu
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Patent number: 11659714Abstract: Described are ferroelectric device film stacks which include a templating or texturing layer or material deposited below a ferroelectric layer, to enable a crystal lattice of the subsequently deposited ferroelectric layer to template off this templating layer and provide a large degree of preferential orientation despite the lack of epitaxial substrates.Type: GrantFiled: May 7, 2021Date of Patent: May 23, 2023Assignee: Kepler Computing Inc.Inventors: Niloy Mukherjee, Ramamoorthy Ramesh, Sasikanth Manipatruni, James Clarkson, FNU Atiquzzaman, Gabriel Antonio Paulius Velarde, Jason Y. Wu