Abstract: A Radio-Frequency (RF) circuit for an RF front-end includes a balanced amplifier with first and second amplifiers and an output directional coupler. First and second ports of the output directional coupler are coupled to outputs of the first and second amplifiers, a third port of the output directional coupler is coupled to an input-output terminal that is configured to be coupled to an antenna, and a fourth port of the output directional coupler is coupled to an input of a receiver amplifier. In a transmit mode, the output directional coupler may couple an RF signal to the input-output terminal. In a receive mode, the output directional coupler may couple a signal received from an antenna to the input of the receiver amplifier.

Abstract: A multiple-stage splitter/combiner circuit includes first and second splitter/combiner circuits coupled together. The first splitter/combiner circuit has first, second, and third input/output (I/O) ports, a first quarter wave line with a first end coupled to the first I/O port and a second end coupled to the second I/O port, a second quarter wave line with a first end coupled to the first I/O port and a second end coupled to the third I/O port, and a first resistor with first and second terminals coupled to the second and third I/O ports, respectively. The second splitter/combiner circuit has fourth, fifth, and sixth I/O ports, and a ring of multiple quarter wave lines, which includes third and fourth quarter wave lines. The third and fourth quarter wave lines each extend from the fourth I/O port in different directions from each other to the fifth and sixth I/O ports, respectively.

Abstract: A radio frequency, RF, switch circuit (201, 301, 401, 501, 601, 701, 751, 801) includes at least one first PiN diode device (252, 352, 452, 552, 652, 752, 852, 945) configured to sink or source a first alternating current; and an impedance inversion circuit (222, 322, 422, 522, 622, 722, 822, 922), connected to the at least one first PiN diode device and arranged to provide a transformed impedance between a first side of the impedance inversion circuit and a second side of the impedance inversion circuit. The RF switch further includes a second diode-based device (254, 354, 454, 554, 654, 754, 854, 945) configured to source or sink a second alternating current; and a bias circuit (330, 430, 530, 630, 830, 930) connected to at least one of the at least one first PiN diode device and the second diode-based device, wherein the at least one first PiN diode device cooperates with the second diode-based device as a push-pull current circuit.

Abstract: A radio frequency, RF, switch circuit (201, 301, 401, 501, 601, 701, 751, 801) includes at least one first PiN diode device (252, 352, 452, 552, 652, 752, 852, 945) configured to sink or source a first alternating current; and an impedance inversion circuit (222, 322, 422, 522, 622, 722, 822, 922), connected to the at least one first PiN diode device and arranged to provide a transformed impedance between a first side of the impedance inversion circuit and a second side of the impedance inversion circuit. The RF switch further includes a second diode-based device (254, 354, 454, 554, 654, 754, 854, 945) configured to source or sink a second alternating current; and a bias circuit (330, 430, 530, 630, 830, 930) connected to at least one of the at least one first PiN diode device and the second diode-based device, wherein the at least one first PiN diode device cooperates with the second diode-based device as a push-pull current circuit.