Abstract: A wafer for the CVD growth of uniform graphene and method of manufacture thereof There is provided a wafer for the CVD growth of uniform graphene at a temperature in excess of 700° C., the wafer comprising in order: a planar silicon substrate, an insulating layer provided across the silicon substrate, and a barrier layer provided across the insulating layer, wherein the insulating layer is a silicon nitride and/or aluminium nitride layer, and wherein the barrier layer has a constant thickness of 50 nm or less and provides a growth surface for the CVD growth of uniform graphene.

Abstract: A method for the manufacture of an improved graphene substrate and applications therefor There is provided a method (100) for the manufacture of an electronic device precursor, the method comprising: (i) providing a silicon wafer (200) having a growth surface (205); (ii) forming (105) an insulative layer (210) on the growth surface (205) having a thickness of from 1 nm to 10 nm, preferably 2 nm to 1 nm; (iii) forming (110) a graphene monolayer or multi-layer structure (215) on the insulative layer (210); (iv) optionally forming (115, 120) one or more further layers (220) and/or electrical contacts (225, 230) on the graphene monolayer or multi-layer structure (215); (v) forming (125) a polymer coating (235) over the graphene monolayer or multi-layer structure (215) and any further layers (115) and/or electrical contacts (225, 230); (vi) thinning (130) the silicon wafer (200), or removing the silicon wafer (200) to provide an exposed surface of the insulative layer (210), by etching with an etchant, wherein the