Patents by Inventor Jassem Ahmed Abdallah

Jassem Ahmed Abdallah has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Simultaneous photoresist development and neutral polymer layer formation
    Patent number: 8715917
    Abstract: A photoresist layer is lithographically exposed to form lithographically exposed photoresist regions and lithographically unexposed photoresist regions. The photoresist layer is developed with a non-polar or weakly polar solvent including a dissolved neutral polymer material. A neutral polymer layer is selectively formed on physically exposed surfaces of a hard mask layer underlying the photoresist layer. The neutral polymer layer has a pattern corresponding to the complement of the area of remaining portions of the photoresist layer. The remaining portions of the photoresist layer are then removed with a polar solvent without removing the neutral polymer layer on the hard mask layer. A block copolymer material can be subsequently applied over the neutral polymer, and the neutral polymer layer can guide the alignment of a phase-separated block copolymer material in a directed self-assembly.
    Type: Grant
    Filed: October 4, 2012
    Date of Patent: May 6, 2014
    Assignee: International Business Machines Corporation
    Inventors: Steven J. Holmes, Jassem Ahmed Abdallah, Joy Cheng, Matthew E. Colburn, Chi-chun Liu
  • SIMULTANEOUS PHOTORESIST DEVELOPMENT AND NEUTRAL POLYMER LAYER FORMATION
    Publication number: 20140099583
    Abstract: A photoresist layer is lithographically exposed to form lithographically exposed photoresist regions and lithographically unexposed photoresist regions. The photoresist layer is developed with a non-polar or weakly polar solvent including a dissolved neutral polymer material. A neutral polymer layer is selectively formed on physically exposed surfaces of a hard mask layer underlying the photoresist layer. The neutral polymer layer has a pattern corresponding to the complement of the area of remaining portions of the photoresist layer. The remaining portions of the photoresist layer are then removed with a polar solvent without removing the neutral polymer layer on the hard mask layer. A block copolymer material can be subsequently applied over the neutral polymer, and the neutral polymer layer can guide the alignment of a phase-separated block copolymer material in a directed self-assembly.
    Type: Application
    Filed: October 4, 2012
    Publication date: April 10, 2014
    Applicant: International Business Machines Corporation
    Inventors: Steven J. Holmes, Jassem Ahmed Abdallah, Joy Cheng, Matthew E. Colburn, Chi-chun Liu