Patents by Inventor Jassy Wang

Jassy Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20060211816
    Abstract: A method for making a series of nanoscale microstructures, including helical microstructures and cylindrical microstructures. This method includes the steps of: (1) forming a chiral block copolymer containing a plurality of chiral first polymer blocks and a second polymer blocks wherein the chiral first polymer blocks have a volume fraction ranging from 20 to 49%; (2) causing a phase separation in the chiral block copolymer. In a preferred embodiment, the chiral block copolymer is poly(styrene)-poly(L-lactide) (PS-PLLA) chiral block copolymer, and the copolymerization process is a living copolymerization process which includes the following steps: (a) mixing styrene with BPO and 4-OH-TEMPO to form 4-hydroxy-TEMPO-terminated polystyrene; and (2) mixing the 4-hydroxy-TEMPO-terminated polystyrene with [(?3-EDBP)Li2]2[(?3-nBu)Li(0.5Et2O)]2 and L-lactide in an organic solvent preferably CH2Cl2 to form the poly(styrene)-poly(L-lactide) chiral block copolymer.
    Type: Application
    Filed: March 12, 2004
    Publication date: September 21, 2006
    Inventors: Rong-Ming Ho, Yeo-Wan Chiang, Chu-Chieh Lin, Bao-Tsan Ko, Yi-Chun Chen, Tsai-Ming Chung, Hsi-Hsin Shih, Jassy Wang
  • Publication number: 20060141266
    Abstract: A cadmium tin oxide (Cd1-xSnxO) multi-layer laminate is disclosed. The laminate comprises: a substrate; and a layer of Cd1-xSnxO which is not an epitaxial structure; wherein, the composition of Sn/(Cd+Sn) is 1˜20%. The method for producing the Cd1-xSnxO multi-layer laminate is also described here. The method comprises steps of: (a) providing metal or oxide targets for sputtering films of Cd1-xSnxO; and (b) sputtering films of Cd1-xSnxO from the targets onto the substrate; wherein the composition of Sn/(Cd+Sn) is 1˜20%.
    Type: Application
    Filed: December 20, 2005
    Publication date: June 29, 2006
    Applicants: Industrial technology Research Institute, Toth Information System, Inc.
    Inventors: Tien-Heng Huang, Ren-Jye Wu, Wen-Hsuan Chao, Lih-Ping Wang, Hung-Chiao Cheng, Jassy Wang, Shu-Hei Wang, John Rodgers