Abstract: One illustrative device disclosed herein includes a V-groove in a base semiconductor layer of a semiconductor-on-insulator (SOI) substrate, wherein the V-groove is adapted to have a fiber optics cable positioned therein, and an optical component positioned above the V-groove. The device also includes a first layer of silicon dioxide positioned above the optical component, a second layer of silicon dioxide positioned on and in contact with the first layer of silicon dioxide and a third layer of silicon dioxide positioned on and in contact with the second layer of silicon dioxide.

Abstract: A method of forming a semiconductor device includes forming a silicide contact region of a field effect transistor (FET); forming a shallow impurity region in a top surface of the silicide contact region; and forming a stressed liner over the FET such that the shallow impurity region is located at an interface between the silicide contact region and the stressed liner, wherein the shallow impurity region comprises one or more impurities, and is configured to hinder diffusion of silicon within the silicide contact region and prevent morphological degradation of the silicide contact region.

Abstract: A method of forming a semiconductor device includes forming a silicide contact region of a field effect transistor (FET); forming a shallow impurity region in a top surface of the silicide contact region; and forming a stressed liner over the FET such that the shallow impurity region is located at an interface between the silicide contact region and the stressed liner, wherein the shallow impurity region comprises one or more impurities, and is configured to hinder diffusion of silicon within the silicide contact region and prevent morphological degradation of the silicide contact region.

Abstract: A system and method for optimizing and implementing a metrology sampling plan. A system is provided that includes a system for collecting historical metrology data from a metrology tool; and a reduction analysis system that compares an initial capability calculated from the historical metrology data with a recalculated capability for a reduced data set, wherein the reduced data set is obtained by removing a subset of data from the historical metrology data.

Abstract: A system and method for optimizing and implementing a metrology sampling plan. A system is provided that includes a system for collecting historical metrology data from a metrology tool; and a reduction analysis system that compares an initial capability calculated from the historical metrology data with a recalculated capability for a reduced data set, wherein the reduced data set is obtained by removing a subset of data from the historical metrology data.

Abstract: Two measurements spaced a shorter time apart than a stabilization period are made of a TV display and used to access a predicted white balance adjustment database to return white balance offsets for entry into the TV.

Abstract: A system and method for optimizing and implementing a metrology sampling plan. A system is provided that includes a system for collecting historical metrology data from a metrology tool; and a reduction analysis system that compares an initial capability calculated from the historical metrology data with a recalculated capability for a reduced data set, wherein the reduced data set is obtained by removing a subset of data from the historical metrology data.

Abstract: A system and method for optimizing and implementing a metrology sampling plan. A system is provided that includes a system for collecting historical metrology data from a metrology tool; and a reduction analysis system that compares an initial capability calculated from the historical metrology data with a recalculated capability for a reduced data set, wherein the reduced data set is obtained by removing a subset of data from the historical metrology data.