Abstract: A method for manufacturing a germanium (Ge) epitaxial layer is provided. First, a substrate is provided. Then, a first deposition process is performed to deposit a first Ge epitaxial film on the substrate. Next, a first annealing process is performed on the first Ge epitaxial film. Following that, a second deposition process is performed to directly deposit a second Ge epitaxial film on the first Ge epitaxial film. Thereafter, a second annealing process is performed on the second Ge epitaxial film, wherein the Ge epitaxial layer includes the first Ge epitaxial film and the second Ge epitaxial film, and a thickness of the Ge epitaxial layer is greater than 0.5 microns.

Abstract: A method for manufacturing a germanium (Ge) epitaxial layer is provided. First, a substrate is provided. Then, a first deposition process is performed to deposit a first Ge epitaxial film on the substrate. Next, a first annealing process is performed on the first Ge epitaxial film. Following that, a second deposition process is performed to directly deposit a second Ge epitaxial film on the first Ge epitaxial film. Thereafter, a second annealing process is performed on the second Ge epitaxial film, wherein the Ge epitaxial layer includes the first Ge epitaxial film and the second Ge epitaxial film, and a thickness of the Ge epitaxial layer is greater than 0.5 microns.