Abstract: In APT systems and methods, a sample is analyzed by concurrently applying different types of energy to the tip of the sample, thereby causing atom evaporation from the end of the tip. Evaporated atoms are analyzed to determine chemical nature and original position information, which is used to generate a compositional profile. To ensure an accurate profile, the applied energy includes: a D.C. voltage, which lowers the critical energy level (Q) for atom evaporation; first laser pulses, which are applied to opposing first sides of the tip near the end to further lower Q and which are phase-shifted so resulting standing wave patterns of heat distribution have energy maxima that are offset and below a threshold to avoid damage to tip side surfaces; and second laser pulse(s), which is/are applied to second side(s) of the tip near the distal end to reach Q and cause atom evaporation from the end.

Abstract: An integrated circuit (IC) structure with a single active region having a doping profile different than that of a set of active regions, is disclosed. The IC structure provides a single active region, e.g., a fin, on a substrate with a first doping profile, and a set of active regions, e.g., fins, electrically isolated from the single active region on the substrate. The set of active regions have a second doping profile that is different than the first doping profile of the single active region. For example, the second doping profile can have a deeper penetration into the substrate than the first doping profile.

Abstract: In APT systems and methods, a sample is analyzed by concurrently applying different types of energy to the tip of the sample, thereby causing atom evaporation from the end of the tip. Evaporated atoms are analyzed to determine chemical nature and original position information, which is used to generate a compositional profile. To ensure an accurate profile, the applied energy includes: a D.C. voltage, which lowers the critical energy level (Q) for atom evaporation; first laser pulses, which are applied to opposing first sides of the tip near the end to further lower Q and which are phase-shifted so resulting standing wave patterns of heat distribution have energy maxima that are offset and below a threshold to avoid damage to tip side surfaces; and second laser pulse(s), which is/are applied to second side(s) of the tip near the distal end to reach Q and cause atom evaporation from the end.

Abstract: An illustrative method disclosed herein includes measuring at least one electrical-related parameter of a doped semiconductor material by simultaneously irradiating at least a portion of an upper surface of the doped semiconductor material, urging a conductive tip of a cantilever beam probe into conductive contact with the upper surface of the irradiated portion of the doped semiconductor material, and generating an electrical current that flows through the doped semiconductor material, through a measurement device that is operatively coupled to the cantilever beam probe and through the cantilever beam probe, wherein the measurement device measures the at least one electrical-related parameter of the doped semiconductor material.

Abstract: An integrated circuit (IC) structure with a single active region having a doping profile different than that of a set of active regions, is disclosed. The IC structure provides a single active region, e.g., a fin, on a substrate with a first doping profile, and a set of active regions, e.g., fins, electrically isolated from the single active region on the substrate. The set of active regions have a second doping profile that is different than the first doping profile of the single active region. For example, the second doping profile can have a deeper penetration into the substrate than the first doping profile.

Abstract: An illustrative system disclosed herein includes a conductive probe that is adapted to hold a quantity of mercury, wherein the conductive probe includes a conductive body with an outlet and a mercury control system adapted to supply mercury to the conductive probe. In this example, the system also includes an image sensor that is adapted to obtain an image of a mercury droplet positioned on a surface of a material and a measurement system that is adapted to receive the image of the mercury droplet and calculate a contact area between the mercury droplet and the surface of the material based upon the image of the mercury droplet.

Abstract: Disclosed are a system and method, wherein, during manufacturing of integrated circuit chips on a semiconductor wafer, an in-line optical inspection is performed to acquire a two-dimensional (2D) image of an area of the semiconductor wafer and to confirm and classify a defect in the area. The 2D image is then converted into a virtual three-dimensional (3D) image. To ensure that the 3D image is accurate, techniques are employed to determine the topography of the surface shown in the 2D image based on material-specific image intensity information and, optionally, to filter out any edge effects that result in anomalies within the 3D image. The resulting 3D image is usable for performing an in-line failure analysis to determine a root cause of a defect. Such an in-line failure analysis can be performed significantly faster than any off-line failure analysis and, thus, allows for essentially real-time advanced process control (APC).

Abstract: Disclosed are a system and method, wherein, during manufacturing of integrated circuit chips on a semiconductor wafer, an in-line optical inspection is performed to acquire a two-dimensional (2D) image of an area of the semiconductor wafer and to confirm and classify a defect in the area. The 2D image is then converted into a virtual three-dimensional (3D) image. To ensure that the 3D image is accurate, techniques are employed to determine the topography of the surface shown in the 2D image based on material-specific image intensity information and, optionally, to filter out any edge effects that result in anomalies within the 3D image. The resulting 3D image is usable for performing an in-line failure analysis to determine a root cause of a defect. Such an in-line failure analysis can be performed significantly faster than any off-line failure analysis and, thus, allows for essentially real-time advanced process control (APC).