Abstract: An integrated circuit (IC) structure with a single active region having a doping profile different than that of a set of active regions, is disclosed. The IC structure provides a single active region, e.g., a fin, on a substrate with a first doping profile, and a set of active regions, e.g., fins, electrically isolated from the single active region on the substrate. The set of active regions have a second doping profile that is different than the first doping profile of the single active region. For example, the second doping profile can have a deeper penetration into the substrate than the first doping profile.

Abstract: An integrated circuit (IC) structure with a single active region having a doping profile different than that of a set of active regions, is disclosed. The IC structure provides a single active region, e.g., a fin, on a substrate with a first doping profile, and a set of active regions, e.g., fins, electrically isolated from the single active region on the substrate. The set of active regions have a second doping profile that is different than the first doping profile of the single active region. For example, the second doping profile can have a deeper penetration into the substrate than the first doping profile.

Abstract: Disclosed are a system and method, wherein, during manufacturing of integrated circuit chips on a semiconductor wafer, an in-line optical inspection is performed to acquire a two-dimensional (2D) image of an area of the semiconductor wafer and to confirm and classify a defect in the area. The 2D image is then converted into a virtual three-dimensional (3D) image. To ensure that the 3D image is accurate, techniques are employed to determine the topography of the surface shown in the 2D image based on material-specific image intensity information and, optionally, to filter out any edge effects that result in anomalies within the 3D image. The resulting 3D image is usable for performing an in-line failure analysis to determine a root cause of a defect. Such an in-line failure analysis can be performed significantly faster than any off-line failure analysis and, thus, allows for essentially real-time advanced process control (APC).

Abstract: Disclosed are a system and method, wherein, during manufacturing of integrated circuit chips on a semiconductor wafer, an in-line optical inspection is performed to acquire a two-dimensional (2D) image of an area of the semiconductor wafer and to confirm and classify a defect in the area. The 2D image is then converted into a virtual three-dimensional (3D) image. To ensure that the 3D image is accurate, techniques are employed to determine the topography of the surface shown in the 2D image based on material-specific image intensity information and, optionally, to filter out any edge effects that result in anomalies within the 3D image. The resulting 3D image is usable for performing an in-line failure analysis to determine a root cause of a defect. Such an in-line failure analysis can be performed significantly faster than any off-line failure analysis and, thus, allows for essentially real-time advanced process control (APC).