Abstract: A semiconductor structure, system, and method of forming a crescent-shaped dielectric isolation layer for stacked field-effect transistors (FETs). The semiconductor structure may include a transistor including an epi. The semiconductor may also include a substrate, where the epi is directly connected to the substrate. The semiconductor may also include an isolation layer directly connected to the epi and the substrate. The system may include a semiconductor structure. The method may include forming an isolation layer directly connected to a substrate. The method may also include forming a first transistor, where forming the first transistor includes growing a first epi, where the first epi is directly connected to the isolation layer and the substrate.

Abstract: A pipe joint having a compound locking ring is disclosed herein. The pipe joint bell has a segment cavity into which ring segments may be inserted through a slot on the face or outer surface of the bell end of a first pipe. The locking ring has multiple ring segments, each segment having an arcuate outer surface. The outer surface may be a compound surface of multiple arcs.

Abstract: A semiconductor device includes a top side and a bottom side opposite the top side. A central portion including a semiconductor substrate is disposed between the top side and the bottom side. A component is disposed in the central portion in contact with the semiconductor substrate. The component includes a first electrical connection from the top side and a second electrical connection from the bottom side.

Abstract: A direct converter for an axisymmetric mirror confinement system provides a set of radially symmetric vanes charged to capture ions escaping along the axis of the confinement system and to convert their energy to electrical power. An electron trap positioned before the charged vanes uses a magnetic field to divert and collect electrons, separating them from the ions, and may support a radial electric field providing plasma control. The charged vanes may be constructed of or have a coating of a getter material absorbing neutrals derived from those ions after capture.

Abstract: A semiconductor device includes a stacked transistor structure having field effect transistors on two levels. The two levels include a top side and a bottom side. Active regions are disposed on the bottom side including a leveled surface facing the top side and a faceted backside surface opposite the leveled surface. The leveled surface includes two different semiconductor materials. A backside contact in contact with the faceted backside surface forms a wraparound contact to reduce contact resistance.

Abstract: A semiconductor device includes a stacked transistor structure having field effect transistors on two levels. The two levels include a top side and bottom side. Active regions are disposed on the bottom side. The active regions include a recessed portion therein. A metal cap is disposed within the recessed portion. A contact is disposed within the metal cap to reduce contact resistance.

Abstract: Crest Factor Reduction (CFR) parameters are determined for a dual band Power Amplifier (PA). A first band of the dual band PA is associated with a first Multi-Link Operation (MLO) link and a second band of the dual band PA is associated with a second MLO link. Determining the CFR parameters comprises determining based on a configuration of the first MLO link and the second MLO link. A first portion of the CFR parameters is provided to a first crest factor reduction block. First portion of the CFR parameters comprises a first clipping threshold associated with the first band and first filter coefficients associated with the first band. A second portion of the CFR parameters is provided to a second crest factor reduction block. The second portion of the CFR parameters comprises a second clipping threshold associated with the second band and second filter coefficients associated with the second band.

Abstract: Embodiments of present invention provide a semiconductor structure. The semiconductor structure includes a first transistor having a first source/drain (S/D) region; a second transistor having a second S/D region, the second transistor being stacked on top of the first transistor; and a first S/D contact shared by the first S/D region of the first transistor and the second S/D region of the second transistor, where the first S/D contact has a first portion and a second portion, the first portion being in direct contact with a top surface of the first S/D region of the first transistor and in direct contact with a bottom surface of the second S/D region, and the second portion being in direct contact with an inner sidewall of the second S/D region of the second transistor. A method of manufacturing the semiconductor structure is also provided.

Abstract: A direct converter for an axisymmetric mirror confinement system provides a set of radially symmetric vanes charged to capture ions escaping along the axis of the confinement system and to convert their energy to electrical power. An electron trap positioned before the charged vanes uses a magnetic field to divert and collect electrons, separating them from the ions, and may support a radial electric field providing plasma control. The charged vanes may be constructed of or have a coating of a getter material absorbing neutrals derived from those ions after capture.

Abstract: Crest Factor Reduction (CFR) parameters are determined for a dual band Power Amplifier (PA). A first band of the dual band PA is associated with a first Multi-Link Operation (MLO) link and a second band of the dual band PA is associated with a second MLO link. Determining the CFR parameters comprises determining based on a configuration of the first MLO link and the second MLO link. A first portion of the CFR parameters is provided to a first crest factor reduction block. First portion of the CFR parameters comprises a first clipping threshold associated with the first band and first filter coefficients associated with the first band. A second portion of the CFR parameters is provided to a second crest factor reduction block. The second portion of the CFR parameters comprises a second clipping threshold associated with the second band and second filter coefficients associated with the second band.

Abstract: Alleviating spectral regrowth and Receive (RX) blocking may be provided. To alleviate spectral regrowth and RX blocking one or more targeted intermodulation products may be identified for a Transmit (TX) data packet of a radio of a Multi-Link Device (MLD). A puncture resolution and a puncture position on the Bandwidth (BW) of the TX data packet may then be determined. A puncture of the TX data packet may then be caused, wherein the puncture has the puncture resolution and the puncture position.

Abstract: Improving transmitter Effective Isotropic Radiated Power (EIRP) may be provided. Improving EIRP may include sending a trigger frame to a client and receiving an uplink transmission from the client in response. A client Transmission (TX) power and a Received Signal Strength Indication (RSSI) associated with the client may be determined using the uplink transmission. Next, a client location may be determined. A pathloss associated with the client may be determined using the client location and the uplink transmission. A directional gain may then be determined using the client TX power, the pathloss, and the RSSI. An array gain is determined based on the directional gain. An Access Point (AP) TX power is adjusted based on the array gain.

Abstract: Ultra-Wideband (UWB) ranging and location tracking, and particularly an UWB antenna array system and methods for improving the accuracy for Phase-Difference-of-Arrival (PDOA) is provided. UWB ranging may include receiving a poll signal from a client via a first and second antenna. PDOA between the first and second antenna is determined based on the poll signal. A response signal is transmitted to the client, and a first portion of a final signal is received via the first antenna and a third antenna and a second portion of the final signal is received via the second and third antenna. PDOA between the first and third antenna is determined based on the first portion, and PDOA between the second and third antenna is determined based on the second portion. The client location is then determined based on the PDOAs.

Abstract: A method, computer system, and computer program product are provided for prioritizing network traffic. An indication is received at a network controller that an alarm is activated at a physical site. A request is received from a user device to join a network at the physical site that is under control of the network controller, wherein the request includes a flag indicating an identity of a user of the user device and a priority status of the user. In response to authenticating the identity of the user via an identity provider server, the user device is authorized to join the network. Based on verifying the priority status of the user using the flag and authentication via the identity provider server, network traffic for the user device is prioritized.

Abstract: Crest Factor Reduction (CFR) parameters are determined for a dual band Power Amplifier (PA). A first band of the dual band PA is associated with a first Multi-Link Operation (MLO) link and a second band of the dual band PA is associated with a second MLO link. Determining the CFR parameters comprises determining based on a configuration of the first MLO link and the second MLO link. A first portion of the CFR parameters is provided to a first crest factor reduction block. First portion of the CFR parameters comprises a first clipping threshold associated with the first band and first filter coefficients associated with the first band. A second portion of the CFR parameters is provided to a second crest factor reduction block. The second portion of the CFR parameters comprises a second clipping threshold associated with the second band and second filter coefficients associated with the second band.

Abstract: A method for calibrating a magnetometer of a device is provided. The method includes collecting, with a portable calibration device having a magnetometer, magnetic field measurements in a spatial region about a mounting location where the device is to be installed for operation, estimating magnetometer compensation parameters to correct for magnetic field distortion at the mounting location based on the magnetic field measurements collected by the portable calibration device, and configuring the device installed at the mounting location based on the magnetometer compensation parameters.

Abstract: Presented herein are techniques to optimize wireless local area network access point beam settings. A method includes, during a survey period, causing a first access point and a second access point in a wireless local area network, to simultaneously transmit survey transmissions according to a predetermined sequence of transmission states, receiving, from a survey station that received the survey transmissions during the survey period, telemetry associated with the survey transmissions, the telemetry including a location of the survey station when the survey station received the survey transmissions, and after the survey period, controlling, based on the telemetry associated with the survey transmissions, the first access point to operate according to a first transmission state from among the transmission states and the second access point to operate according to a second transmission state from among the transmission states.

Abstract: Presented herein are techniques to allocate use of controlled wireless spectrum. A method includes receiving, from a wireless local area network service provider, a request for wireless local area network spectrum for a future time window, wherein the wireless local area network spectrum is subject to automated frequency coordination, in response to the request, sending, to an incumbent that uses the wireless local area network spectrum, a query consistent with the request for the wireless local area network spectrum for the future time window, receiving, from the incumbent, in response to the query, a grant to use the wireless local area network spectrum for the future time window, and in response to receiving the grant, sending permission to the wireless local area network service provider to use the wireless local area network spectrum for the future time window.

Abstract: In one embodiment, an apparatus includes a plurality of antennas, a plurality of Front End Modules (FEMs) coupled to the antennas, an input for receiving Power over Ethernet (PoE), a PoE detector for identifying a type of PoE received at the apparatus, wherein the type of PoE is associated with a PoE power budget, and a power controller for applying a PoE power conservation policy based on the PoE power budget, wherein applying the PoE power conservation policy comprises switching between a normal operating voltage and a reduced operating voltage at the FEMs. A method is also disclosed herein.

Abstract: Techniques herein facilitate dynamic configuration of a wireless local area network (WLAN) for large public venue (LPV) environments. In one example, a method may include providing an initial configuration for access points APs of a WLAN for an event at an LPV based on a profile for the event, a location of each AP for the venue, and anticipated demand at the APs; determining, for a particular time for the event, a distribution of wireless devices and channel support capabilities of the wireless devices different locations for the LPV; and providing an updated configuration for one or more APs at the one or more locations for the venue based on the distribution of the wireless devices and the channel support capabilities of the wireless devices determined for the particular time for the event at the LPV.