Abstract: Provided is a display panel including a light-emitting element, and a pixel circuit electrically connected to the light-emitting element, and including a driving unit electrically connected to the light-emitting element, the driving unit including a first transistor including a first bottom electrode for receiving a first voltage, and a first semiconductor pattern including an oxide semiconductor above the first bottom electrode, and at least one diode including a second bottom electrode for receiving a second voltage at a same layer as the first bottom electrode, and a second semiconductor pattern above the second bottom electrode, at a same layer as the first semiconductor pattern, including an oxide semiconductor, and integrated with the first semiconductor pattern.

Abstract: A display device includes a first lower electrode disposed on a base substrate, a first upper electrode disposed on the first lower electrode, overlapping the first lower electrode in a plan view, including a silicon semiconductor, and constituting a first capacitor together with the first lower electrode, a second lower electrode disposed on the first upper electrode, and a second upper electrode disposed on the second lower electrode, overlapping the second lower electrode in a plan view, including an oxide semiconductor, and constituting a second capacitor together with the second lower electrode.

Abstract: A display apparatus includes a substrate including a transmission area having a first through hole, a display area surrounding the transmission area, and a middle area disposed between the transmission area and the display area, a pixel circuit disposed on the display area, the pixel circuit including a first thin film transistor including a first semiconductor layer having polycrystalline silicon, and a second thin film transistor including a second semiconductor layer including an oxide semiconductor, a display element including a pixel electrode electrically connected to the pixel circuit, an opposite electrode disposed on the pixel electrode, and an intermediate layer disposed between the pixel electrode and the opposite electrode and including an emission layer, and a groove disposed in the middle area while surrounding the first through hole.

Abstract: A display panel includes a light-emitting element, and a pixel circuit electrically connected to the light-emitting element. The pixel circuit includes a first transistor including a first semiconductor pattern including a first channel region, and a first gate electrode disposed on the first semiconductor pattern and overlapping the first channel region, a first insulation layer disposed between the first semiconductor pattern and the first gate electrode and overlapping the first channel region, a second insulation layer disposed on the first gate electrode and covering the first transistor, a second transistor disposed on the second insulation layer, and including a second semiconductor pattern including a second channel region, and a second gate electrode disposed on the second semiconductor pattern and overlapping the second channel region, and a third insulation layer disposed between the second semiconductor pattern and the second gate electrode and overlapping the first transistor in a plan view.

Abstract: Provided is a display panel including a light-emitting element, and a pixel circuit electrically connected to the light-emitting element, and including a driving unit electrically connected to the light-emitting element, the driving unit including a first transistor including a first bottom electrode for receiving a first voltage, and a first semiconductor pattern including an oxide semiconductor above the first bottom electrode, and at least one diode including a second bottom electrode for receiving a second voltage at a same layer as the first bottom electrode, and a second semiconductor pattern above the second bottom electrode, at a same layer as the first semiconductor pattern, including an oxide semiconductor, and integrated with the first semiconductor pattern.

Abstract: A display apparatus includes a substrate having a display area in which display elements are arranged, a first thin-film transistor in the display area and including a first semiconductor layer and a first gate electrode, the first semiconductor layer including an oxide semiconductor and the first gate electrode being insulated from the first semiconductor layer, and a first interlayer insulating layer between the first semiconductor layer and the first gate electrode, wherein the first interlayer insulating layer on the first semiconductor layer has a first length in a first direction, wherein the first gate electrode on the first interlayer insulating layer has a second length in the first direction, and wherein the first length is greater than the second length.

Abstract: An organic light emitting display device includes a substrate including a light emitting region, a first active layer having a source region and a drain region disposed in the light emitting region on the substrate, a gate insulation layer disposed on the first active layer, a first gate electrode disposed on the gate insulation layer, a first insulating interlayer disposed on the first gate electrode, a second insulating interlayer disposed on the first insulating interlayer, a first source electrode disposed on the second insulating interlayer, the first source electrode being connected to the source region of the first active layer through a contact hole formed in the gate insulation layer, the first insulating interlayer, and the second insulating interlayer, a protective insulating layer disposed on the first source electrode, a first drain electrode disposed on the protective insulating layer, the first drain electrode being connected to the drain region of the first active layer through a contact hole

Abstract: A display device includes a first lower electrode disposed on a base substrate, a first upper electrode disposed on the first lower electrode, overlapping the first lower electrode in a plan view, including a silicon semiconductor, and constituting a first capacitor together with the first lower electrode, a second lower electrode disposed on the first upper electrode, and a second upper electrode disposed on the second lower electrode, overlapping the second lower electrode in a plan view, including an oxide semiconductor, and constituting a second capacitor together with the second lower electrode.

Abstract: A display apparatus includes a substrate including a transmission area having a first through hole, a display area surrounding the transmission area, and a middle area disposed between the transmission area and the display area, a pixel circuit disposed on the display area, the pixel circuit including a first thin film transistor including a first semiconductor layer having polycrystalline silicon, and a second thin film transistor including a second semiconductor layer including an oxide semiconductor, a display element including a pixel electrode electrically connected to the pixel circuit, an opposite electrode disposed on the pixel electrode, and an intermediate layer disposed between the pixel electrode and the opposite electrode and including an emission layer, and a groove disposed in the middle area while surrounding the first through hole.

Abstract: A display device includes a first pixel and a second pixel. The light emitting element of the second pixel and the driving circuit are disposed in the second area. The first pixel includes a silicon transistor and an oxide transistor disposed in the second area. The first pixel includes a first sub-light emitting element and a second sub-light emitting element disposed in a first area, and a first sub-pixel circuit and a second sub-pixel circuit disposed in a second area. A first connection wiring connecting a transistor included in the first sub-pixel circuit and the first sub-light emitting element, and a second connection wiring connecting a transistor included in the second sub-pixel circuit and the second sub-light emitting element are disposed on different layers and include a transparent conductive oxide.

Abstract: A semiconductor device includes a base substrate. A first thin-film transistor is disposed on the base substrate. The first thin-film transistor includes a first input electrode, a first output electrode, a first semiconductor pattern disposed below a first insulating layer, and a first control electrode disposed on the first insulating layer and below a second insulating layer. A second thin-film transistor includes a second input electrode, a second output electrode, a second semiconductor pattern disposed on the second insulating layer, and a second control electrode disposed on an insulating pattern formed on the second semiconductor pattern and exposes a portion of the second semiconductor pattern. The first semiconductor pattern includes a crystalline semiconductor. The second semiconductor pattern incudes an oxide semiconductor. The first semiconductor pattern, the first control electrode, the second semiconductor pattern, and the second control electrode are overlapped.

Abstract: A display device is disclosed that includes: a substrate comprising a display area and a component area including a transmission area; a first thin-film transistor comprising a first semiconductor layer and a first gate electrode, the first semiconductor layer including a silicon semiconductor; a first insulating layer covering the first gate electrode; a second thin-film transistor comprising a second semiconductor layer arranged on the first insulating layer and a second gate electrode, the second semiconductor layer including an oxide semiconductor; a second insulating layer covering the second gate electrode and having a transmission hole overlapping the transmission area; an intermediate insulating layer between the first insulating layer and the second insulating layer; a conductive pattern between the intermediate insulating layer and the first insulating layer; and a display element arranged on the second insulating layer, wherein the transmission hole exposes an upper surface of the intermediate insu

Abstract: A display apparatus includes a substrate including a transmission area having a first through hole, a display area surrounding the transmission area, and a middle area disposed between the transmission area and the display area, a pixel circuit disposed on the display area, the pixel circuit including a first thin film transistor including a first semiconductor layer having polycrystalline silicon, and a second thin film transistor including a second semiconductor layer including an oxide semiconductor, a display element including a pixel electrode electrically connected to the pixel circuit, an opposite electrode disposed on the pixel electrode, and an intermediate layer disposed between the pixel electrode and the opposite electrode and including an emission layer, and a groove disposed in the middle area while surrounding the first through hole.

Abstract: A display apparatus includes a base substrate, a polysilicon active pattern disposed on the base substrate, including polycrystalline silicon, including a source region and a drain region each doped with impurities and a channel region between the source region and the drain region, and including indium, a first gate electrode overlapping the channel region, and a source electrode electrically connected to the source region and a drain electrode electrically connected to the drain region.

Abstract: A display device includes a base substrate, a first transistor, a second transistor, an organic light emitting diode, and a capacitor electrically connected to the first thin film transistor. The first transistor includes a first semiconductor pattern below a first interlayer insulation layer and a first control electrode above the first interlayer insulation layer and below a second interlayer insulation layer. The second transistor includes a second control electrode above the first interlayer insulation layer and below the second interlayer insulation layer. A second semiconductor pattern is above the second interlayer insulation layer.

Abstract: A display device is disclosed that includes: a substrate comprising a display area and a component area including a transmission area; a first thin-film transistor comprising a first semiconductor layer and a first gate electrode, the first semiconductor layer including a silicon semiconductor; a first insulating layer covering the first gate electrode; a second thin-film transistor comprising a second semiconductor layer arranged on the first insulating layer and a second gate electrode, the second semiconductor layer including an oxide semiconductor; a second insulating layer covering the second gate electrode and having a transmission hole overlapping the transmission area; an intermediate insulating layer between the first insulating layer and the second insulating layer; a conductive pattern between the intermediate insulating layer and the first insulating layer; and a display element arranged on the second insulating layer, wherein the transmission hole exposes an upper surface of the intermediate insu

Abstract: A semiconductor device includes a base substrate, a first transistor disposed on the base substrate, the first transistor including a first input electrode, a first output electrode, a first control electrode, and a first semiconductor pattern including a crystalline semiconductor, a second transistor disposed on the base substrate, the second transistor including a second input electrode, a second output electrode, a second control electrode, and a second semiconductor pattern including an oxide semiconductor, a plurality of insulating layers disposed on the base substrate, and an upper electrode disposed on the first control electrode with at least one insulating layer of the plurality of insulating layers interposed between the upper electrode and the first control electrode. The upper electrode overlaps the first control electrode and forms a capacitor with the first control electrode.

Abstract: A display device includes a base substrate, a first transistor, a second transistor, an organic light emitting diode, and a capacitor electrically connected to the first thin film transistor. The first transistor includes a first semiconductor pattern below a first interlayer insulation layer and a first control electrode above the first interlayer insulation layer and below a second interlayer insulation layer. The second transistor includes a second control electrode above the first interlayer insulation layer and below the second interlayer insulation layer. A second semiconductor pattern is above the second interlayer insulation layer.

Abstract: A display device includes a first semiconductor layer, a first conductive layer disposed on the first semiconductor layer and including a first capacitor electrode at least partially overlapping the first semiconductor layer in a plan view to constitute a first transistor, a second capacitor electrode disposed on the first conductive layer and overlapping the first capacitor electrode in a plan view to constitute a first capacitor, a second semiconductor layer disposed on the second capacitor electrode and including a third capacitor electrode overlapping the second capacitor electrode in a plan view to constitute a second capacitor, a second conductive layer disposed on the second semiconductor layer and at least partially overlapping the second semiconductor layer, and a third conductive layer disposed over the second conductive layer to implement a high-resolution image by overlapping the first capacitor electrode, the second capacitor electrode, and the third capacitor electrode.

Abstract: A display device includes a base substrate, a first transistor, a second transistor, an organic light emitting diode, and a capacitor electrically connected to the first thin film transistor. The first transistor includes a first semiconductor pattern below a first interlayer insulation layer and a first control electrode above the first interlayer insulation layer and below a second interlayer insulation layer. The second transistor includes a second control electrode above the first interlayer insulation layer and below the second interlayer insulation layer. A second semiconductor pattern is above the second interlayer insulation layer.