Patents by Inventor Jay Crawford

Jay Crawford has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Antimonide-based compound semiconductor with titanium tungsten stack
    Patent number: 8927354
    Abstract: An apparatus in one example comprises an antimonide-based compound semiconductor (ABCS) stack, an upper barrier layer formed on the ABCS stack, and a gate stack formed on the upper barrier layer. The upper barrier layer comprises indium, aluminum, and arsenic. The gate stack comprises a base layer of titanium and tungsten formed on the upper barrier layer.
    Type: Grant
    Filed: March 11, 2013
    Date of Patent: January 6, 2015
    Assignees: Northrop Grumman Systems Corporation, The United States of America As Represented by the Secretary of The Navy
    Inventors: Yeong-Chang Chou, Jay Crawford, Jane Lee, Jeffrey Ming-Jer Yang, John Bradley Boos, Nicolas Alexandrou Papanicolaou
  • ANTIMONIDE-BASED COMPOUND SEMICONDUCTOR WITH TITANIUM TUNGSTEN STACK
    Publication number: 20130210219
    Abstract: An apparatus in one example comprises an antimonide-based compound semiconductor (ABCS) stack, an upper barrier layer formed on the ABCS stack, and a gate stack formed on the upper barrier layer. The upper barrier layer comprises indium, aluminum, and arsenic. The gate stack comprises a base layer of titanium and tungsten formed on the upper barrier layer.
    Type: Application
    Filed: March 11, 2013
    Publication date: August 15, 2013
    Inventors: Yeong-Chang CHOU, Jay CRAWFORD, Jane LEE, Jeffrey Ming-Jer YANG, John Bradley Boos, Nicolas Alexandrou Papanicolaou
  • Antimonide-based compound semiconductor with titanium tungsten stack
    Patent number: 8421121
    Abstract: An apparatus in one example comprises an antimonide-based compound semiconductor (ABCS) stack, an upper barrier layer formed on the ABCS stack, and a gate stack formed on the upper barrier layer. The upper barrier layer comprises indium, aluminum, and arsenic. The gate stack comprises a base layer of titanium and tungsten formed on the upper barrier layer.
    Type: Grant
    Filed: April 18, 2007
    Date of Patent: April 16, 2013
    Assignee: Northrop Grumman Systems Corporation
    Inventors: Yeong-Chang Chou, Jay Crawford, Jane Lee, Jeffrey Ming-Jer Yang, John Bradley Boos, Nicolas Alexandrou Papanicolaou
  • Lenticular License Plate and Method
    Publication number: 20080271351
    Abstract: A lenticular license plate including a lenticular lens that has a first surface and a second surface, a plurality of lenses affixed to the first surface of the lenticular lens, a lenticular image printed on a film, and the film is affixed to the second surface of the lenticular lens. The lenticular image may include at least two interlaced images.
    Type: Application
    Filed: June 6, 2006
    Publication date: November 6, 2008
    Inventor: Jay Crawford
  • Antimonide-based compound semiconductor with titanium tungsten stack
    Publication number: 20080258176
    Abstract: An apparatus in one example comprises an antimonide-based compound semiconductor (ABCS) stack, an upper barrier layer formed on the ABCS stack, and a gate stack formed on the upper barrier layer. The upper barrier layer comprises indium, aluminum, and arsenic. The gate stack comprises a base layer of titanium and tungsten formed on the upper barrier layer.
    Type: Application
    Filed: April 18, 2007
    Publication date: October 23, 2008
    Inventors: Yeong-Chang Chou, Jay Crawford, Jane Lee, Jeffrey Ming-Jer Yang, John Bradley Boos, Nicolas Alexandrou Papanicolaou