Abstract: Systems and methods to determine ozone concentration in a gas mixture of ozone and oxygen, based on measurements of a total mass flow and a corresponding change in a chamber pressure accepting the mixture flow, can enable the measurements of ozone concentration at low pressure settings. The ozone concentration determination can be applied to a vacuum processing chamber, enabling precision semiconductor processing.

Abstract: Systems and methods to determine ozone concentration in a gas mixture of ozone and oxygen, based on measurements of the total gas mixture properties, can enable the measurements of ozone concentration at low pressure settings. The ozone concentration determination can be applied to vacuum processing chamber, using either novel ozone sensor or existing mass flow meter or controller.

Abstract: Remote-plasma treatments of surfaces, for example in semiconductor manufacture, can be improved by preferentially exposing the surface to only a selected subset of the plasma species generated by the plasma source. The probability that a selected species reaches the surface, or that an unselected species is quenched or otherwise converted or diverted before reaching the surface, can be manipulated by introducing additional gases with selected properties either at the plasma source or in the process chamber, varying chamber pressure or flow rate to increase or decrease collisions, or changing the dimensions or geometry of the injection ports, conduits and other passages traversed by the species. Some example processes treat surfaces preferentially with relatively low-energy radicals, vary the concentration of radicals at the surface in real time, or clean and passivate in the same unit process.

Abstract: A shielding component and a sputter gun are described. The sputter gun has a housing. The housing has a region configured to expose a target surface. The shielding component extends around an inward facing periphery of the region. The shielding component comprises metal foam. The shielding component is configured to provide a fluid proximate to the target surface. An annular channel may be arranged to provide a gas through pores of the metal foam of the shielding component, to the region proximate to the target.

Abstract: An apparatus and method for multiple symmetrical divisional gas distribution providing a mounting plate, a plurality of manifolds coupled to the mounting plate, a center purge block coupled to the mounting plate and the plurality of manifolds, a plurality of reactant distribution blocks, wherein each reactant distribution block is stacked atop each other to form a reactant distribution block stack, wherein the reactant distribution block stack sits atop the center purge block, a coupling mechanism to secure the plurality of reactant distribution blocks of the reactant distribution block stack together; and a top cap coupled to the reactant distribution block stack and the coupling mechanism.

Abstract: A top assembly for a processing chamber having a back plate and a hub is provided. The back plate has a first portion and a second portion. The first portion is connected to the second portion through a central region of the back plate, wherein a gap is defined between opposing surfaces of the first and second portions outside the central region. The first portion includes an embedded heating element. The hub is affixed to a top surface of the second portion of the back plate over the central region. The hub has a top surface with a plurality of channel openings defined within a central region of the hub and a bottom surface having a central extension with a plurality of channels defined therethrough. The bottom surface includes an annular extension spaced apart from the central extension.

Abstract: A method of combinatorially processing a substrate and combinatorial processing chamber are provided. The processing chamber includes opposing annular rings defining a conductance gap that extends radially outward. The opposing annular rings are configured to vary the conductance gap in-situ. The variation of the conductance gap is another parameter for processing regions of a substrate differently to evaluate the impact of the conductance variation on a deposition process.

Abstract: Embodiments provided herein describe bubbler assemblies for substrate processing systems. The substrate processing bubbler assemblies include an inner shell, an outer shell, and a thermoelectric device. The inner shell is configured to hold a liquid. The outer shell at least partially surrounds the inner shell. The inner shell and the outer shell are sized and shaped such that a gap is formed between the inner shell and the outer shell. The thermoelectric device interconnects the inner shell and the outer shell. The thermoelectric device has a first side adjacent to the inner shell and a second side adjacent to the outer shell and is configured to transfer heat between the first side and the second side thereof.

Abstract: Systems and methods to determine ozone concentration in a gas mixture of ozone and oxygen, based on measurements of a total mass flow and a corresponding change in a chamber pressure accepting the mixture flow, can enable the measurements of ozone concentration at low pressure settings. The ozone concentration determination can be applied to a vacuum processing chamber, enabling precision semiconductor processing.

Abstract: Systems and methods to determine ozone concentration in a gas mixture of ozone and oxygen, based on measurements of the total gas mixture properties, can enable the measurements of ozone concentration at low pressure settings. The ozone concentration determination can be applied to vacuum processing chamber, using either novel ozone sensor or existing mass flow meter or controller.

Abstract: An apparatus and method for multiple symmetrical divisional gas distribution providing a mounting plate, a plurality of manifolds coupled to the mounting plate, a center purge block coupled to the mounting plate and the plurality of manifolds, a plurality of reactant distribution blocks, wherein each reactant distribution block is stacked atop each other to form a reactant distribution block stack, wherein the reactant distribution block stack sits atop the center purge block, a coupling mechanism to secure the plurality of reactant distribution blocks of the reactant distribution block stack together; and a top cap coupled to the reactant distribution block stack and the coupling mechanism.

Abstract: A method of combinatorially processing a substrate and combinatorial processing chamber are provided. The processing chamber includes opposing annular rings defining a conductance gap that extends radially outward. The opposing annular rings are configured to vary the conductance gap in-situ. The variation of the conductance gap is another parameter for processing regions of a substrate differently to evaluate the impact of the conductance variation on a deposition process.

Abstract: A top assembly for a processing chamber having a back plate and a hub is provided. The back plate has a first portion and a second portion. The first portion is connected to the second portion through a central region of the back plate, wherein a gap is defined between opposing surfaces of the first and second portions outside the central region. The first portion includes an embedded heating element. The hub is affixed to a top surface of the second portion of the back plate over the central region. The hub has a top surface with a plurality of channel openings defined within a central region of the hub and a bottom surface having a central extension with a plurality of channels defined therethrough. The bottom surface includes an annular extension spaced apart from the central extension.

Abstract: The present invention relates generally to a deposition apparatus for semiconductor processing. More specifically, embodiments of the present invention relate to a gas manifold valve cluster and deposition apparatus. In some embodiments of the present invention a gas manifold valve cluster and system are provided that promotes reduced length and volumes of gas lines that will be exposed to atmosphere during cleaning which minimizes the time required to perform process chamber maintenance and therefore increase the productivity of the process chamber. In other embodiments a gas manifold valve cluster and ALD deposition apparatus are provided.

Abstract: The present invention provides a gas distribution apparatus useful in semiconductor manufacturing. The gas distribution apparatus comprises a unitary member and a gas distribution network formed within the unitary member for uniformly delivering a gas into a process region. The gas distribution network is formed of an inlet passage extending upwardly through the upper surface of the unitary member for connecting to a gas source, a plurality of first passages converged at a junction and connected with the inlet passage at the junction, a plurality of second passages connected with the plurality of first passages, and a plurality of outlet passages connected with the plurality of second passages for delivering the gas into a processing region. The first passages extend radially and outwardly from the junction to the periphery surface of the unitary member, and the second passages are non-perpendicular to the first passages and extend outwardly from the first passages to the periphery surface.

Abstract: An injector and exhaust assembly for providing delivery of gas to a substrate is provided. The injector and exhaust assembly comprises at least two injectors positioned adjacent each other and spaced apart to form at least one exhaust channel therebetween, and a mounting plate for securing the at least two injectors, wherein each of the at least two injectors being individually mounted to or removed from the mounting plate, and the mounting plate being provided with at least one exhaust slot in fluid communication with the at least one exhaust channel. An exhaust assembly is coupled to the mounting plate to remove exhaust gases from the injectors.

Abstract: The present invention provides a gas distribution apparatus comprising a plurality of outlets and at least one replaceable insert placed in at least one of the outlets. The insert is provided with a passageway adapted to alter the size of the at least one of the outlets and/or the direction of gases exiting the at least one of the outlets. The insert is provided with passageway that may be substantial straight and cylindrical. The passageway may have a first portion with a smaller diameter and a second portion with a larger diameter to selectively alter the size of the outlet passage in the gas distribution apparatus. Alternatively, the insert is provided with a main passageway and plurality of secondary passageways branched and angled from the main passageway. The angle between the main and branch passageways is in the range from about 10 to about 90 degrees. In one embodiment, the angle between the main and branch passageways is about 90 degrees.

Abstract: A resistance heater for heating fluids including a fluid-permeable porous substrate. An electrically conductive porous thin film is deposited on the porous substrate. An electrical connector coupled to the thin film and adapted to provide an electrical circuit through said thin film to effect heating of said thin film in order to heat a fluid passing through the pours of the thin film and substrate. A method of making and using a resistance heater is also disclosed.

Abstract: A resistance heater for heating fluids including a fluid-permeable porous substrate. An electrically conductive porous thin film is deposited on the porous substrate. An electrical connector coupled to the thin film and adapted to provide an electrical circuit through said thin film to effect heating of said thin film in order to heat a fluid passing through the pours of the thin film and substrate. A method of making and using a resistance heater is also disclosed.