Abstract: A modular polishing system and substrate handling system can be configured to facilitate high throughput density substrate processing in a multi-stage substrate polishing process. The substrate is polished at a first polishing station for one of the stages in the multi-stage polishing process before being transferred to a second polishing station for a second stage of the multi-stage polishing process. Differently configured polishing stations can use different types of polishing pads, different types of pad conditioners, and/or may use one or more different types of polishing fluid during a stage of the substrate polishing process.

Abstract: Embodiments herein include high throughput density chemical mechanical polishing (CMP) modules and customizable modular CMP systems formed thereof. In one embodiment, a polishing module features a carrier support module, a carrier loading station, and a polishing station. The carrier support module features a carrier platform and one or more carrier assemblies. The one or more carrier assemblies each comprise a corresponding carrier head suspended from the carrier platform. The carrier loading station is used to transfer substrates to and from the carrier heads. The polishing station comprises a polishing platen. The carrier support module, the substrate loading station, and the polishing station comprise a one-to-one-to-one relationship within each of the polishing modules. The carrier support module is positioned to move the one or more carrier assemblies between a substrate polishing position disposed above the polishing platen and a substrate transfer position disposed above the substrate loading station.

Abstract: Embodiments of the disclosure provided herein include an apparatus and method for additive manufacturing a component for a semiconductor processing apparatus. The apparatus for additive manufacturing includes a printhead configured to selectively deposit layers on build the component, wherein the printhead may selectively deposit a first set of layers onto the build platform, and selectively deposit a second set of layers on the first set of layers, each of the second set of layers comprising a gap that forms a cooling channel through the component. The cooling channel is filled a filler material. A third set of layers covers the cooling channel before the channel is exposed to a liquidizing agent, wherein the liquidizing agent reacts with the filler material to produce an effluent fluid which is then drained. In other embodiments, the cooling channel may be machined into the component before being filled with the filler material.

Abstract: Disclosed herein is a chemical mechanical polishing apparatus, including a platen having an upper surface to support a polishing pad, the platen having an annular chamber below and separated from a portion of an upper surface of the platen by a plate that is sufficiently flexible to deflect under a change of a pressure in the annular chamber, the platen having a channel fluidically connecting the annular chamber to a port in the platen; a pressure source coupled to the port to control the pressure in the annular chamber; a carrier head to hold a surface of a substrate against the polishing pad; and a motor to generate relative motion between the platen and the carrier head so as to polish an overlying layer on the substrate.

Abstract: A chemical mechanical polishing system includes a chuck assembly that has a chuck to hold a substrate, a motor to rotate the chuck about a first axis, and a pad carrier assembly. The pad carrier assembly includes a support that is movably along a radial direction relative to the first axis, a lateral actuator coupled the support to cause the support to move along the radial direction, a support arm extending from the support over the chuck, a pad carrier suspended from the support arm, the pad carrier configured to receive and hold a polishing pad, and a flexible membrane secured to the support arm to form a plurality of individually pressurizable chambers between the pad carrier and the support arm such that variation of a pressure difference between the chambers adjusts a radial distribution of pressure on the pad carrier.

Abstract: A chemical mechanical polishing system includes a chuck assembly with a chuck for holding a substrate, a motor to rotate the chuck about a first axis, and a pad carrier assembly. The pad carrier assembly includes a movable support, a lateral actuator coupled the support to move the support along the radial direction, a flexure having a first end secured to the support and a second end, a pad carrier/attachment secured to a bottom side of the second end of the flexure for receiving and holding a polishing pad, a support arm extending from the support over the flexure such that the support arm and the flexure move together along the radial direction with the second end of the flexure vertically movable relative to the support arm, and a pad carrier actuator secured to the arm to apply a downward pressure to a top of the flexure.

Abstract: A chemical mechanical polishing method includes transferring a substrate onto a chuck supported by a drive shaft when the chuck is located at a first height, raising the chuck to a second height greater than the first height such that a top surface of the substrate is in contact with at least one polishing pad, polishing the substate by the at least one polishing pad, lowering, the chuck to a third height lower than the second height, and transferring the substrate off of the chuck.

Abstract: A carrier head for holding a substrate in a polishing system includes a housing, an annular body that is vertically movable relative to the housing by an actuator, a first annular membrane secured to extending below the annular body to form at least one lower pressurizable chamber between the first annular membrane and the annular body, and at least one pressure supply line connected to the at least one lower pressurizable chamber. The annular body includes an upper portion and at least one lower post projecting downward from the upper portion, with the at least one lower post located inside the at least one lower pressurizable chamber.

Abstract: A chemical mechanical polishing touch-up tool includes a pedestal configured to support a substrate, a plurality of jaws configured to center the substrate on the pedestal, a loading ring to apply pressure to an annular region on a back side of the substrate on the pedestal, a polishing ring to bring a polishing material into contact with an annular region on a front side of the substrate that is aligned with the annular region on the back side of the substrate, and a polishing ring actuator to rotate the polishing ring to cause relative motion between the polishing ring and the substrate.

Abstract: A chemical mechanical polishing apparatus has a platen with a top surface to hold a polishing pad, a carrier head to hold a substrate against a polishing surface of the polishing pad during a polishing process, a sensor and/or actuator arranged on the carrier head, and a rotary electrical connection which provides at least two electrical connections between a controller and the sensor and/or actuator. The controller is configured to receive a signal from the sensor and/or actuator and control the carrier head based on the signal.

Abstract: Embodiments herein include high throughput density chemical mechanical polishing (CMP) modules and customizable modular CMP systems formed thereof. In one embodiment, a polishing module features a carrier support module, a carrier loading station, and a polishing station. The carrier support module features a carrier platform and one or more carrier assemblies. The one or more carrier assemblies each comprise a corresponding carrier head suspended from the carrier platform. The carrier loading station is used to transfer substrates to and from the carrier heads. The polishing station comprises a polishing platen. The carrier support module, the substrate loading station, and the polishing station comprise a one-to-one-to-one relationship within each of the polishing modules. The carrier support module is positioned to move the one or more carrier assemblies between a substrate polishing position disposed above the polishing platen and a substrate transfer position disposed above the substrate loading station.

Abstract: Embodiments herein include high throughput density chemical mechanical polishing (CMP) modules and customizable modular CMP systems formed thereof. In one embodiment, a polishing module features a carrier support module, a carrier loading station, and a polishing station. The carrier support module features a carrier platform and one or more carrier assemblies. The one or more carrier assemblies each comprise a corresponding carrier head suspended from the carrier platform. The carrier loading station is used to transfer substrates to and from the carrier heads. The polishing station comprises a polishing platen. The carrier support module, the substrate loading station, and the polishing station comprise a one-to-one-to-one relationship within each of the polishing modules. The carrier support module is positioned to move the one or more carrier assemblies between a substrate polishing position disposed above the polishing platen and a substrate transfer position disposed above the substrate loading station.

Abstract: A chemical mechanical polishing touch-up tool includes a pedestal configured to support a substrate, a plurality of jaws configured to center the substrate on the pedestal, a loading ring to apply pressure to an annular region on a back side of the substrate on the pedestal, a polishing ring to bring a polishing material into contact with an annular region on a front side of the substrate that is aligned with the annular region on the back side of the substrate, and a polishing ring actuator to rotate the polishing ring to cause relative motion between the polishing ring and the substrate.

Abstract: Embodiments of the present disclosure provide a multiple disk pad conditioner and methods of using the multiple disk pad conditioner during a chemical mechanical polishing (CMP) process. The multiple disk pad conditioner has a plurality of conditioning heads having conditioning disks affixed thereto. The multiple disk pad conditioner can include a conditioning arm, and a plurality of conditioning heads attached to the conditioning arm. Each of the plurality of conditioning heads has a conditioning disk affixed thereto. In some embodiments, each of the conditioning heads include a rotational axis, wherein each of the rotational axes is disposed a distance apart in a first direction that extends along the length of the conditioning arm.

Abstract: A carrier head for chemical mechanical polishing includes a base assembly and a membrane assembly connected to the base assembly. The membrane assembly includes a membrane support, an inner membrane secured to the membrane support, wherein the inner membrane forms a plurality of individually pressurizable inner chambers between an upper surface of the membrane and the membrane support, and an outer membrane secured to the membrane support and extending below the inner membrane, the outer membrane having an inner surface and an outer surface, wherein the outer membrane defines a lower pressurizable chamber between the inner surface of the outer membrane and a lower surface of the inner membrane, wherein the inner surface is positioned for contact by a lower surface of the inner membrane upon pressurization of one or more of the plurality of chambers, and wherein the outer surface is configured to contact a substrate.

Abstract: The present disclosure is directed towards polishing modules for performing chemical mechanical polishing of a substrate. The substrate may be a semiconductor substrate. The polishing modules described have a plurality of pads, such as polishing pads, disposed within a single polishing station. The pads are configured to remain stationary during processing, such as during polishing or buff operations. Either an x-y gantry assembly or a head actuation assembly is coupled to a system body of a polishing module and is configured to move a carrier head over the pads. Between process operations the polishing pads may be indexed to expose a new polishing pad to the carrier head.

Abstract: A system may include a gimbal defining a plurality of pockets, where each pocket may include a first portion and a second portion that extends between the first portion and a base of the pocket. The second portion may have a greater diameter than the first portion. The system may include a plurality of conditioning disks, where each conditioning disk is seated within the first portion of a respective pocket. The system may include a plurality of gaskets, where each gasket is seated within the second portion of a respective pocket. The system may include a plurality o-rings, each o-ring disposed between a peripheral edge of one of the plurality of conditioning disks and a lateral wall of one of the plurality of pockets. The system may include a plurality of shoulder screws for coupling the gimbal with one of the plurality of gaskets and a conditioning disk.

Abstract: A chemical mechanical polishing apparatus includes: an inner platen to support an inner polishing pad; an annular outer platen to support an outer polishing pad; a carrier head to hold a substrate; one or more motors to rotate the inner platen about a vertical axis at a first rotation rate and to rotate the outer platen about the vertical axis at a second rotation rate; and a controller configured to select values for multiple control parameters to minimize a difference between a target removal profile and an expected removal profile, the multiple control parameters including a first parameter representing a difference in rotational speeds between the inner and outer platens. The outer polishing pad can coaxially surround the inner platen, and an outer edge of the inner platen and an inner edge of the outer platen can be separated by a gap.

Abstract: A chemical mechanical polishing apparatus includes an inner platen to support an inner polishing pad, aan annular outer platen to support an outer polishing pad, a carrier head to hold a substrate, a first motor to rotate the inner platen about a vertical axis at a first rotation rate, and a second motor to rotate the outer platen about the vertical axis at a second rotation rate. The outer polishing pad coaxially surrounds the inner platen, and an outer edge of the inner platen and an inner edge of the outer platen are separated by a gap.

Abstract: A carrier head for chemical mechanical polishing includes a housing for attachment to a drive shaft, a membrane assembly arranged beneath the lower carrier body, and a flexure. The membrane assembly includes a membrane support and a flexible membrane secured to the membrane support to defining a plurality of pressurizable lower chambers, with the flexible membrane having a lower surface that provides a substrate mounting surface. A flexible seal forms a pressurizable upper chamber between the housing and the membrane support. The flexure connects the membrane support to the housing, and the flexure extends through the pressurizable upper chamber.