Abstract: A device contains at least one sample preparation site for transmission electron microscopic (TEM) analysis. Included in the device is a first layer of silicon dioxide that serves as a substrate, a layer of silicon overlying the substrate, a second layer of silicon dioxide deposited on the silicon layer, and a continuous trench that circumscribes a sample preparation site for TEM analysis. The trench extends through the second layer of silicon dioxide and the layer of silicon; that portion extending through the silicon dioxide layer is wider than the portion through the silicon layer. In a process for forming a device containing at least one sample preparation site for TEM analysis, a layer of silicon is formed on a silicon dioxide substrate that is optionally attached to a silicon handle. A second layer of silicon dioxide is formed on the silicon layer, and a mask forming a continuous trench is etched in the second silicon dioxide layer.