Abstract: Method and apparatus for providing integrated monitoring, control and diagnostics functions for semiconductor spray processors is disclosed. In a preferred embodiment, a spray processor host system of the present invention comprises a plurality of PC-class computers interconnected via a network link. Each of a first subset of the spray processor host system computers comprises a supervisor computer connected to one of a plurality of spray process tools, which in the preferred embodiment comprise Mercury.RTM. MP processors. The supervisor computers provide ongoing information exchange with the processors and maintain up-to-date status information. Each supervisor computer maintains an event log of processor operations and operator actions, as well as data capture files for storing process variables captured by the supervisor computer.

Abstract: The quality of both a gate oxide and a tunnel oxide in a P-well active area of a CMOS EEPROM process is improved by reducing the field edge pullback arising from wet chemical etch steps prior to the growth of the gate and tunnel oxides. A first oxide is grown, and an implant is performed through the first oxide to form an implanted layer. The surface of the first oxide is then cleaned without removing all of the first oxide overlying the implanted layer. An anneal step then activates the implanted layer to form a heavily-doped region, after which the remaining first oxide is then removed. A second oxide is then grown, and a region of the second oxide is removed overlying the heavily-doped region. Lastly, a tunnel oxide is grown over the heavily-doped region while re-oxidizing the second oxide to form a gate oxide thicker than the tunnel oxide.