Patents by Inventor Jay Jianhui Chen
Jay Jianhui Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11281113Abstract: A method for determining a stack configuration for a substrate subjected to a patterning process. The method includes obtaining (i) measurement data of a stack configuration with location information on a printed substrate, (ii) a substrate model configured to predict a stack characteristic based on a location of the substrate, and (iii) a stack map including a plurality of stack configurations based on the substrate model. The method iteratively determines values of model parameters of the substrate model based on a fitting between the measurement data and the plurality of stack configurations of the stack map, and predicts an optimum stack configuration at a particular location based on the substrate model using the values of the model parameters.Type: GrantFiled: May 21, 2019Date of Patent: March 22, 2022Assignee: ASML Netherlands B.V.Inventors: Danying Li, Chi-Hsiang Fan, Abdalmohsen Elmalk, Youping Zhang, Jay Jianhui Chen, Kui-Jun Huang
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Publication number: 20210247701Abstract: A method for determining a stack configuration for a substrate subjected to a patterning process. The method includes obtaining (i) measurement data of a stack configuration with location information on a printed substrate, (ii) a substrate model configured to predict a stack characteristic based on a location of the substrate, and (iii) a stack map including a plurality of stack configurations based on the substrate model. The method iteratively determines values of model parameters of the substrate model based on a fitting between the measurement data and the plurality of stack configurations of the stack map, and predicts an optimum stack configuration at a particular location based on the substrate model using the values of the model parameters.Type: ApplicationFiled: May 21, 2019Publication date: August 12, 2021Applicant: ASMI NETHERLANDS B.V.Inventors: Danying LI, Chi-Hsiang FAN, Adbalmohsen ELMALK, Youping ZHANG, Jay Jianhui CHEN, Kui-Jun HUANG
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Patent number: 10983440Abstract: A method including: obtaining a relationship between a performance indicator of a substrate measurement recipe and a parameter of the substrate measurement recipe; deriving a range of the parameter from the relationship, wherein absolute values of the performance indicator satisfy a first condition or a magnitude of variation of the performance indicator satisfies a second condition, when the first parameter is in the range; selecting a substrate measurement recipe that has the parameter in the range; and inspecting a substrate with the selected substrate measurement recipe.Type: GrantFiled: May 9, 2017Date of Patent: April 20, 2021Assignee: ASML Netherlands B.V.Inventors: Jen-Shiang Wang, Jay Jianhui Chen
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Patent number: 10551750Abstract: Disclosed is a process monitoring method, and an associated metrology apparatus.Type: GrantFiled: April 24, 2019Date of Patent: February 4, 2020Assignee: ASML Netherlands B.V.Inventors: Adam Jan Urbanczyk, Hans Van Der Laan, Grzegorz Grzela, Alberto Da Costa Assafrao, Chien-Hung Tseng, Jay Jianhui Chen
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Publication number: 20190258172Abstract: A method including: obtaining a relationship between a performance indicator of a substrate measurement recipe and a parameter of the substrate measurement recipe; deriving a range of the parameter from the relationship, wherein absolute values of the performance indicator satisfy a first condition or a magnitude of variation of the performance indicator satisfies a second condition, when the first parameter is in the range; selecting a substrate measurement recipe that has the parameter in the range; and inspecting a substrate with the selected substrate measurement recipe.Type: ApplicationFiled: May 9, 2017Publication date: August 22, 2019Applicant: ASML NETHERLANDS B.V.Inventors: Jen-Shiang WANG, Jay Jianhui CHEN
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Publication number: 20190250520Abstract: Disclosed is a process monitoring method, and an associated metrology apparatus.Type: ApplicationFiled: April 24, 2019Publication date: August 15, 2019Applicant: ASML Netherlands B.V.Inventors: Adam Jan URBANCZYK, Hans VAN DER LAAN, Grzegorz GRZELA, Alberto DA COSTA ASSAFRAO, Chien-Hung TSENG, Jay Jianhui CHEN
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Patent number: 10310388Abstract: Disclosed is a process monitoring method, and an associated metrology apparatus. The method comprises: comparing measured target response spectral sequence data relating to the measurement response of actual targets to equivalent reference target response sequence data relating to a measurement response of the targets as designed; and performing a process monitoring action based on the comparison of said measured target response sequence data and reference target response sequence data. The method may also comprise determining stack parameters from the measured target response spectral sequence data and reference target response spectral sequence data.Type: GrantFiled: January 19, 2018Date of Patent: June 4, 2019Assignee: ASML Netherlands B.V.Inventors: Adam Urbanczyk, Hans Van Der Laan, Grzegorz Grzela, Alberto Da Costa Assafrao, Chien-Hung Tseng, Jay Jianhui Chen
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Publication number: 20180217508Abstract: Disclosed is a process monitoring method, and an associated metrology apparatus. The method comprises: comparing measured target response spectral sequence data relating to the measurement response of actual targets to equivalent reference target response sequence data relating to a measurement response of the targets as designed; and performing a process monitoring action based on the comparison of said measured target response sequence data and reference target response sequence data. The method may also comprise determining stack parameters from the measured target response spectral sequence data and reference target response spectral sequence data.Type: ApplicationFiled: January 19, 2018Publication date: August 2, 2018Applicant: ASML Netherlands B.V.Inventors: Adam URBANCZYK, Hans Van Der Laan, Grzegorz Grzela, Alberto Da Costa Assafrao, Chien-Hung Tseng, Jay Jianhui Chen
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Patent number: 9903823Abstract: A method to determine an overlay error between a first structure and a second structure, wherein the first structure and second structures are on different layers on a substrate and are imaged onto the substrate by a lithographic process, the method comprising: obtaining an apparent overlay error; obtaining a systematic error caused by a factor other than misalignment of the first and second structures; and determining the overlay error by removing the systematic error from the apparent overlay error. The method may alternatively comprise obtaining apparent characteristics of diffraction orders of diffraction by an overlapping portion of the first and second structures; obtaining corrected characteristics of the diffraction orders; determining the overlay error from the corrected characteristics; and adjusting a characteristic of the lithographic process based on the overlay error.Type: GrantFiled: November 18, 2015Date of Patent: February 27, 2018Assignee: ASML NETHERLANDS B.V.Inventors: Yen-Wen Lu, Jay Jianhui Chen, Wei Liu, Boris Menchtchikov, Jen-Shiang Wang, Te-Chih Huang
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Publication number: 20160146740Abstract: A method to determine an overlay error between a first structure and a second structure, wherein the first structure and second structures are on different layers on a substrate and are imaged onto the substrate by a lithographic process, the method comprising: obtaining an apparent overlay error; obtaining a systematic error caused by a factor other than misalignment of the first and second structures; and determining the overlay error by removing the systematic error from the apparent overlay error. The method may alternatively comprise obtaining apparent characteristics of diffraction orders of diffraction by an overlapping portion of the first and second structures; obtaining corrected characteristics of the diffraction orders; determining the overlay error from the corrected characteristics; and adjusting a characteristic of the lithographic process based on the overlay error.Type: ApplicationFiled: November 18, 2015Publication date: May 26, 2016Applicant: ASML NETHERLANDS B.V.Inventors: Yen-Wen Lu, Jay Jianhui Chen, Wei Liu, Boris Menchtchikov, Jen-Shiang Wang, Te-Chih Huang