Abstract: A device includes a substrate having a first side and a second side, a first transistor that includes a first gate over a first protrusion and a first source region and a first drain region interposing the first protrusion, a first buried contact disposed adjacent to the first protrusion and having at least a portion extending into the substrate, a first contact plug disposed over the first drain region, first conductive lines disposed over the first contact plug and electrically connecting to the first drain region by the first contact plug, first via penetrating through the substrate and connecting the first buried contact; and second conductive lines disposed over the second side of the substrate and electrically connecting to the first via. The first buried contact is electrically connecting to the first source region or the first gate.

Abstract: A memory device and a memory circuit is provided. The memory device includes a spin-orbit torque (SOT) layer, a magnetic tunnel junction (MTJ), a read word line, a selector and a write word line. The MTJ stands on the SOT layer. The read word line is electrically connected to the MTJ. The write word line is connected to the SOT layer through the selector. The write word line is electrically connected to the SOT layer when the selector is turned on, and the write word line is electrically isolated from the SOT layer when the selector is in an off state.

Abstract: A semiconductor device including a semiconductor substrate and an interconnect structure is provided. The semiconductor substrate includes a transistor, wherein the transistor has a source region and a drain region. The interconnect structure is disposed over the semiconductor substrate, wherein the interconnect structure includes a plurality of interlayer dielectric layers, a first via and a memory cell. The plurality of interlayer dielectric layers are over the semiconductor substrate. The first via is embedded in at least two interlayer dielectric layers among the plurality of interlayer dielectric layers and electrically connected with the drain region of the transistor. The memory cell is disposed over the at least two interlayer dielectric layers among the plurality of interlayer dielectric layers and electrically connected with the first via.

Abstract: Semiconductor device includes pair of active devices, composite spin Hall electrode, and a magnetic tunnel junction. Composite spin Hall electrode is electrically connected to pair of active devices. Magnetic tunnel junction is disposed on opposite side of composite spin hall electrode with respect to pair of active devices. Spin Hall electrode includes pair of heavy metal layers, and spacer layer disposed in between pair of heavy metal layers. Pair of heavy metal layers is made of a heavy metal in a metastable state. Spacer layer comprises first material different from the pair of heavy metal layers.

Abstract: A magnetic memory device includes a magnetic tunnel junction (MTJ) stack, a spin-orbit torque (SOT) induction wiring disposed over the MTJ stack, a first terminal coupled to a first end of the SOT induction wiring, a second terminal coupled to a second end of the SOT induction wiring, and a shared selector layer coupled to the first terminal.

Abstract: A pneumatic tool includes a casing, a cylinder unit, a valve knob and a pneumatic sealing device. The casing has a main portion that has an inner surface defining a receiving space therein, and an outer surface opposite to the inner surface. The cylinder unit is mounted in the receiving space. The valve knob is disposed in the receiving space and is rotatably connected to the cylinder unit. The pneumatic sealing device includes a ring member that is ring-shaped and rigid, that surrounds and is connected to the valve knob, and that is clamped between the inner surface of the casing and the cylinder unit for keeping a distance between the casing and the cylinder unit constant.

Abstract: A device is provided that includes a semiconductor substrate on which a free magnetic element is positioned, which has first and second magnetic domains separated by a domain wall. A first magnet is positioned on the substrate near a first end of the free magnetic element, and has a first polarity and a first value of coercivity. A second magnet is positioned on the substrate near a second end of the free magnetic element, and has a second polarity, antiparallel relative to the first polarity, and a second value of coercivity different from the first value of coercivity.

Abstract: Semiconductor device includes pair of active devices, composite spin Hall electrode, and a magnetic tunnel junction. Composite spin Hall electrode is electrically connected to pair of active devices. Magnetic tunnel junction is disposed on opposite side of composite spin hall electrode with respect to pair of active devices. Spin Hall electrode includes pair of heavy metal layers, and spacer layer disposed in between pair of heavy metal layers. Pair of heavy metal layers is made of a heavy metal in a metastable state. Spacer layer comprises first material different from the pair of heavy metal layers.

Abstract: Provided are a memory device and a method of forming the same. The memory device includes: a selector; a magnetic tunnel junction (MTJ) structure, disposed on the selector; a spin orbit torque (SOT) layer, disposed between the selector and the MTJ structure, wherein the SOT layer has a sidewall aligned with a sidewall of the selector; a transistor, wherein the transistor has a drain electrically coupled to the MTJ structure; a word line, electrically coupled to a gate of the transistor; a bit line, electrically coupled to the SOT layer; a first source line, electrically coupled to a source of the transistor; and a second source line, electrically coupled to the selector, wherein the transistor is configured to control a write signal flowing between the bit line and the second source line, and control a read signal flowing between the bit line and the first source line.

Abstract: Various embodiments of the present disclosure are directed towards a semiconductor structure including a memory cell overlying a substrate. A lower via underlies the memory cell. The lower via is laterally offset from the memory cell by a lateral distance. A first conductive layer is disposed vertically between the memory cell and the lower via and comprising a first material. The first conductive layer continuously extends along the lateral distance. A second conductive layer extends across an upper surface of the first conductive layer and comprises a second material different from the first material. A bottom surface of the second conductive layer is aligned with a bottom surface of the memory cell.

Abstract: The disclosure is directed to spin-orbit torque (“SOT”) magnetoresistive random-access memory (“MRAM”) (“SOT-MRAM”) structures and methods. A new structure of the SOT channel has one or more magnetic insertion layers superposed or stacked with one or more heavy metal layer(s). Through proximity to a magnetic insertion layer, a surface portion of a heavy metal layer is magnetized to include a magnetization. The magnetization within the heavy metal layer enhances spin-dependent scattering, which leads to increased transverse spin imbalance.

Abstract: Provided are a memory device and a method of forming the same. The memory device includes: a selector; a magnetic tunnel junction (MTJ) structure, disposed on the selector; a spin orbit torque (SOT) layer, disposed between the selector and the MTJ structure, wherein the SOT layer has a sidewall aligned with a sidewall of the selector; a transistor, wherein the transistor has a drain electrically coupled to the MTJ structure; a word line, electrically coupled to a gate of the transistor; a bit line, electrically coupled to the SOT layer; a first source line, electrically coupled to a source of the transistor; and a second source line, electrically coupled to the selector, wherein the transistor is configured to control a write signal flowing between the bit line and the second source line, and control a read signal flowing between the bit line and the first source line.

Abstract: Various embodiments of the present disclosure are directed towards a memory device including a shunting layer overlying a spin orbit torque (SOT) layer. A magnetic tunnel junction (MTJ) structure overlies a semiconductor substrate. The MTJ structure includes a free layer, a reference layer, and a tunnel barrier layer disposed between the free and reference layers. A bottom electrode via (BEVA) underlies the MTJ structure, where the BEVA is laterally offset from the MTJ structure by a lateral distance. The SOT layer is disposed vertically between the BEVA and the MTJ structure, where the SOT layer continuously extends along the lateral distance. The shunting layer extends across an upper surface of the SOT layer and extends across at least a portion of the lateral distance.

Abstract: A magnetic memory device includes a magnetic tunnel junction (MTJ) stack, a spin-orbit torque (SOT) induction wiring disposed over the MTJ stack, a first terminal coupled to a first end of the SOT induction wiring, a second terminal coupled to a second end of the SOT induction wiring, and a selector layer coupled to the first terminal.

Abstract: A spin-orbit-torque (SOT) magnetic device includes a bottom metal layer, a first magnetic layer disposed over the bottom metal layer, a spacer layer disposed over the first magnetic layer, and a second magnetic layer disposed over the spacer layer. A diffusion barrier layer for suppressing metal elements of the first magnetic layer from diffusing into the bottom metal layer is disposed between the bottom metal layer and the first magnetic layer.

Abstract: A semiconductor device including a semiconductor substrate and an interconnect structure is provided. The semiconductor substrate includes a transistor, wherein the transistor has a source region and a drain region. The interconnect structure is disposed over the semiconductor substrate, wherein the interconnect structure includes a plurality of interlayer dielectric layers, a first via and a memory cell. The plurality of interlayer dielectric layers are over the semiconductor substrate. The first via is embedded in at least two interlayer dielectric layers among the plurality of interlayer dielectric layers and electrically connected with the drain region of the transistor. The memory cell is disposed over the at least two interlayer dielectric layers among the plurality of interlayer dielectric layers and electrically connected with the first via.

Abstract: Memory stacks, memory devices and method of forming the same are provided. A memory stack includes a spin-orbit torque layer, a magnetic bias layer and a free layer. The magnetic bias layer is in physical contact with the spin-orbit torque layer and has a first magnetic anisotropy. The free layer is disposed adjacent to the spin-orbit torque layer and has a second magnetic anisotropy perpendicular to the first magnetic anisotropy.

Abstract: A magnetic memory device includes a magnetic tunnel junction (MTJ) stack, a spin-orbit torque (SOT) induction wiring disposed over the MTJ stack, a first terminal coupled to a first end of the SOT induction wiring, a second terminal coupled to a second end of the SOT induction wiring, and a selector layer coupled to the first terminal.

Abstract: A method includes depositing a first dielectric layer over a semiconductor substrate, depositing a first electrode layer over the first dielectric layer, etching the first electrode layer to form a first electrode and a second electrode laterally separated from the first electrode, depositing a Spin Orbit Torque (SOT) material on the first electrode and the second electrode, depositing Magnetic Tunnel Junction (MTJ) layers on the SOT material, depositing a second electrode layer on the MTJ layers, etching the SOT material to form a SOT layer extending from the first electrode to the second electrode, etching the MTJ layers to form an MTJ stack on the SOT layer, and etching the second electrode layer to form a top electrode on the MTJ stack.

Abstract: In some embodiments, the present disclosure relates to a memory device that includes a spin orbit torque (SOT) layer arranged over a substrate. A magnetic tunnel junction (MTJ) structure may be arranged over the SOT layer. The MTJ structure includes a free layer, a reference layer, and a diffusion barrier layer disposed between the free layer and the reference layer. A first conductive wire is arranged below the SOT layer and coupled to the SOT layer. A second conductive wire is arranged below the SOT layer and coupled to the SOT layer. A third conductive wire is arranged over the MTJ structure. The memory device further includes a first selector structure arranged between the first conductive wire and the SOT layer.