Patents by Inventor Jay M. Shah
Jay M. Shah has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9589658Abstract: Approaches for a memory including a cell array are provided. The memory includes a first device of the cell array which is connected to a bitline and a node and controlled by a word line, and a second device of the cell array which comprises a third device which is connected to a source line and the node and controlled by the word line and a fourth device which is connected between the word line and the node. In the memory, in response to another word line in the cell array being activated and the word line not being activated to keep the first device in an unprogrammed state, the third device isolates and floats the node such that a voltage level of a gate to source of the first device is clamped down by the fourth device to a voltage level around zero volts.Type: GrantFiled: August 18, 2015Date of Patent: March 7, 2017Assignee: GLOBALFOUNDRIES INC.Inventors: Navin Agarwal, Aditya S. Auyisetty, Balaji Jayaraman, Thejas Kempanna, Toshiaki Kirihata, Ramesh Raghavan, Krishnan S. Rengarajan, Rajesh R. Tummuru, Jay M. Shah, Janakiraman Viraraghavan
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Publication number: 20170053705Abstract: Approaches for a memory including a cell array are provided. The memory includes a first device of the cell array which is connected to a bitline and a node and controlled by a word line, and a second device of the cell array which comprises a third device which is connected to a source line and the node and controlled by the word line and a fourth device which is connected between the word line and the node. In the memory, in response to another word line in the cell array being activated and the word line not being activated to keep the first device in an unprogrammed state, the third device isolates and floats the node such that a voltage level of a gate to source of the first device is clamped down by the fourth device to a voltage level around zero volts.Type: ApplicationFiled: August 18, 2015Publication date: February 23, 2017Inventors: Navin AGARWAL, Aditya S. AUYISETTY, Balaji JAYARAMAN, Thejas KEMPANNA, Toshiaki KIRIHATA, Ramesh RAGHAVAN, Krishnan S. RENGARAJAN, Rajesh R. TUMMURU, Jay M. SHAH, Janakiraman VIRARAGHAVAN
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Patent number: 9431289Abstract: Oxygen scavenging material embedded in an isolation structure provides improved protection of high dielectric constant (Hi-K) materials from oxygen contamination while avoiding alteration of work function and switching threshold shift in transistors including such Hi-K materials.Type: GrantFiled: June 17, 2015Date of Patent: August 30, 2016Assignee: GLOBALFOUNDRIES Inc.Inventors: Christopher V. Baiocco, Michael P. Chudzik, Deleep R. Nair, Jay M. Shah
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Patent number: 9196707Abstract: At least one layer including a scavenging material and a dielectric material is deposited over a gate stack, and is subsequently anisotropically etched to form a oxygen-scavenging-material-including gate spacer. The oxygen-scavenging-material-including gate spacer can be a scavenging-nanoparticle-including gate spacer or a scavenging-island-including gate spacer. The scavenging material is distributed within the oxygen-scavenging-material-including gate spacer in a manner that prevents an electrical short between a gate electrode and a semiconductor material underlying a gate dielectric. The scavenging material actively scavenges oxygen that diffuses toward the gate dielectric from above, or from the outside of, a dielectric gate spacer that can be formed around the oxygen-scavenging-material-including gate spacer.Type: GrantFiled: November 6, 2013Date of Patent: November 24, 2015Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Michael P. Chudzik, Deleep R. Nair, Vijay Narayanan, Carl J. Radens, Jay M. Shah
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Publication number: 20150287629Abstract: Oxygen scavenging material embedded in an isolation structure provides improved protection of high dielectric constant (Hi-K) materials from oxygen contamination while avoiding alteration of work function and switching threshold shift in transistors including such Hi-K materials.Type: ApplicationFiled: June 17, 2015Publication date: October 8, 2015Inventors: Christopher V. Baiocco, Michael P. Chudzik, Deleep R. Nair, Jay M. Shah
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Patent number: 9093495Abstract: Oxygen scavenging material embedded in an isolation structure provides improved protection of high dielectric constant (Hi-K) materials from oxygen contamination while avoiding alteration of work function and switching threshold shift in transistors including such Hi-K materials.Type: GrantFiled: January 3, 2012Date of Patent: July 28, 2015Assignee: International Business Machines CorporationInventors: Christopher Vincent Baiocco, Michael P. Chudzik, Deleep R. Nair, Jay M. Shah
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Patent number: 9059211Abstract: At least one layer including a scavenging material and a dielectric material is deposited over a gate stack, and is subsequently anisotropically etched to form a oxygen-scavenging-material-including gate spacer. The oxygen-scavenging-material-including gate spacer can be a scavenging-nanoparticle-including gate spacer or a scavenging-island-including gate spacer. The scavenging material is distributed within the oxygen-scavenging-material-including gate spacer in a manner that prevents an electrical short between a gate electrode and a semiconductor material underlying a gate dielectric. The scavenging material actively scavenges oxygen that diffuses toward the gate dielectric from above, or from the outside of, a dielectric gate spacer that can be formed around the oxygen-scavenging-material-including gate spacer.Type: GrantFiled: October 3, 2011Date of Patent: June 16, 2015Assignee: International Business Machines CorporationInventors: Michael P. Chudzik, Deleep R. Nair, Vijay Narayanan, Carl J. Radens, Jay M. Shah
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Publication number: 20140065783Abstract: At least one layer including a scavenging material and a dielectric material is deposited over a gate stack, and is subsequently anisotropically etched to form a oxygen-scavenging-material-including gate spacer. The oxygen-scavenging-material-including gate spacer can be a scavenging-nanoparticle-including gate spacer or a scavenging-island-including gate spacer. The scavenging material is distributed within the oxygen-scavenging-material-including gate spacer in a manner that prevents an electrical short between a gate electrode and a semiconductor material underlying a gate dielectric. The scavenging material actively scavenges oxygen that diffuses toward the gate dielectric from above, or from the outside of, a dielectric gate spacer that can be formed around the oxygen-scavenging-material-including gate spacer.Type: ApplicationFiled: November 6, 2013Publication date: March 6, 2014Applicant: International Business Machines CorporationInventors: Michael P. Chudzik, Deleep R. Nair, Vijay Narayanan, Carl J. Radens, Jay M. Shah
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Patent number: 8564074Abstract: A semiconductor device is disclosed. The semiconductor device includes a semiconductor substrate including: a high-K dielectric region; a blocking region disposed against at least one surface of the high-K dielectric region and adapted to form an oxidized layer in response to exposure to oxygen; and an oxygen rich region disposed against the blocking region such that the blocking region is interposed between the oxygen rich region and the high-K dielectric region.Type: GrantFiled: November 29, 2011Date of Patent: October 22, 2013Assignee: International Business Machines CorporationInventors: Terence B. Hook, Vijay Narayanan, Jay M. Shah, Melanie J. Sherony, Kenneth J. Stein, Helen H. Wang, Chendong Zhu
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Publication number: 20130168780Abstract: Oxygen scavenging material embedded in an isolation structure provides improved protection of high dielectric constant (Hi-K) materials from oxygen contamination while avoiding alteration of work function and switching threshold shift in transistors including such Hi-K materials.Type: ApplicationFiled: January 3, 2012Publication date: July 4, 2013Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Christopher Vincent Baiocco, Michael P. Chudzik, Deleep R. Nair, Jay M. Shah
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Publication number: 20130134545Abstract: A semiconductor device is disclosed. The semiconductor device includes a semiconductor substrate including: a high-K dielectric region; a blocking region disposed against at least one surface of the high-K dielectric region and adapted to form an oxidized layer in response to exposure to oxygen; and an oxygen rich region disposed against the blocking region such that the blocking region is interposed between the oxygen rich region and the high-K dielectric region.Type: ApplicationFiled: November 29, 2011Publication date: May 30, 2013Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Terence B. Hook, Vijay Narayanan, Jay M. Shah, Melanie J. Sherony, Kenneth J. Stein, Helen H. Wang, Chendong Zhu
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Publication number: 20130082337Abstract: At least one layer including a scavenging material and a dielectric material is deposited over a gate stack, and is subsequently anisotropically etched to form a oxygen-scavenging-material-including gate spacer. The oxygen-scavenging-material-including gate spacer can be a scavenging-nanoparticle-including gate spacer or a scavenging-island-including gate spacer. The scavenging material is distributed within the oxygen-scavenging-material-including gate spacer in a manner that prevents an electrical short between a gate electrode and a semiconductor material underlying a gate dielectric. The scavenging material actively scavenges oxygen that diffuses toward the gate dielectric from above, or from the outside of, a dielectric gate spacer that can be formed around the oxygen-scavenging-material-including gate spacer.Type: ApplicationFiled: October 3, 2011Publication date: April 4, 2013Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Michael P. Chudzik, Deleep R. Nair, Vijay Narayanan, Carl J. Radens, Jay M. Shah