Abstract: Disclosed is a substance-sensitive semiconductor and a method for making the same, wherein a substance-sensitive material is combined with photoresist material and applied to an electronic device structure. The substance-sensitive material may be applied before or after the photoresist material, or even may be combined with the photoresist material to form a substance-sensitive layer of photoresist material on the semi-conductor. The photoresist material is then processed, such that unwanted, or undesirable areas are free from the photoresist material and the areas of desired substance sensitivity have a fully processed photoresist layer. A further embodiment of the present disclosure provides multiple layers sensitive to different ions on a single sheet of semiconductor or electromagnetically active material.

Abstract: A pyroelectric substrate is provided with a heater and at least one set of electrodes for sensing charge redistributions due to changes in the substrate temperature. In a preferred embodiment, there are two interdigitated electrodes, one coated with an absorber/desorber material. The heater pulsatingly raises the temperature of the substrate past the desorption temperature of a fluid of interest. If the fluid was exposed to the absorber/desorber material prior to heating, a portion of the fluid will have been absorbed. When the substrate reaches the desorption temperature, additional heat pulses will not increase the substrate temperature significantly until the fluid has desorbed. Thus, heat used in changing state does not raise the substrate temperature and, lacking a temperature change, reduces the charge redistribution sensed by the electrode coated with the material.

Abstract: Disclosed is a pyroelectric shear meter which can be utilized as a pyroelectric vorticimeter in which a pyroelectric substrate has a heater element located thereon and two conductor elements located adjacent the heater element. The conductor elements are spaced apart along the longitudinal axis of the heater element and located on the same side of the longitudinal axis. A fluctuating power supply is connected to the heater element causing a fluctuating surface charge distribution which varies as a function of the temperature of the substrate in the vicinity of each of the spaced apart conductor elements. Differences in charge redistributions sensed at each of the spaced apart conductor elements is an indication of the differences in flow velocity due to shear in the vicinity of the shear meter. The orienting of two shear meters with heating elements at 90.degree.

Abstract: Disclosed is a pyroelectric anemometer capable of providing an accurate indication of fluid flow rate. A pyroelectric substrate has a heater element located essentially transverse to the fluid flow direction. Sensor electrodes also transverse to the fluid flow direction are located upstream and downstream of the heater electrode. A fluctuating power supply is connected to the heater electrode which results in a fluctuating voltage at each sensor electrode. The amplitude of the fluctuations at the electrodes are compared and the difference in amplitude of fluctuations is indicative of the flow rate of fluid flowing thereover. Preferred embodiments utilize a differential amplifier to compare the fluctuating amplitudes and provides an output to a lock-in-amplifier which provides a fluid flow rate indicator output.

Abstract: Disclosed is a substance-sensitive semiconductor and a method for making the same, wherein a substance-sensitive material is combined with photoresist material and applied to an electronic device structure. The substance-sensitive material may be applied before or after the photoresist material, or even may be combined with the photoresist material to form a substance-sensitive layer of photoresist material on the semiconductor. The photoresist material is then processed, such that unwanted, or undesirable areas are free from the photoresist material and the areas of desired substance sensitivity have a fully processed photoresist layer. A further embodiment of the present disclosure provides multiple layers sensitive to different ions on a single sheet of semiconductor or electromagnetically active material.

Abstract: Disclosed is an ion-controlled device for providing an electrical indication of a specific ion concentration in a fluid. An ion-sensitive membrane is placed over the junction of a gate controlled diode whose impedance is being measured. An external reference electrode is biased such that an inversion layer forms in the semiconductor material near the ion-sensitive membrane. Changes in the concentration of the unknown ion in fluid passing over the ion-sensitive membrane will affect the inversion layer in the gate controlled diode. The change in inversion layer will result in measurable changes in the diodes impedance.