Abstract: The invention is related to anti-viral compounds, compositions containing such compounds, and therapeutic methods that include the administration of such compounds, as well as to processes and intermediates useful for preparing such compounds.

Abstract: The invention provides unsaturated phosphonates of Formula I or a tautomer or pharmaceutically acceptable salt thereof, as described herein, as well as pharmaceutical compositions comprising the compounds, and therapeutic methods comprising administering the compounds. The compounds have anti-viral properties and are useful for treating viral infections (e.g. HCV) in animals (e.g. humans).

Abstract: Provided are imidazo[1,5-f][1,2,4]triazinyl, imidazo[1,2-f][1,2,4]triazinyl, and [1,2,4]triazolo[4,3-f][1,2,4]triazinyl nucleosides, nucleoside phosphates and prodrugs thereof. The compounds, compositions, and methods provided are useful for the treatment of Flaviviridae virus infections, particularly hepatitis C infections.

Abstract: Provided are pyrrolo[1,2-f][1,2,4]triazinyl, imidazo[1,5-f][1,2,4]triazinyl, imidazo[1,2-f][1,2,4]triazinyl, and [1,2,4]triazolo[4,3-f][1,2,4]triazinyl nucleosides, nucleoside phosphates and prodrugs thereof, wherein the 1? position of the nucleoside sugar is substituted. The compounds, compositions, and methods provided are useful for the treatment of Flaviviridae virus infections, particularly hepatitis C infections.

Abstract: The invention provides unsaturated phosphonates of Formula I or a tautomer or pharmaceutically accepatble salt thereof, as described herein, as well as pharmaceutical compositions comprising the compounds, and therapeutic methods comprising administering the compounds. The compounds have anti-viral properties and are useful for treating viral infections (e.g. HCV) in animals (e.g. humans).

Abstract: Provided are pyrrolo[1,2-f][1,2,4]triazinyl, imidazo[1,5-f][1,2,4]triazinyl, imidazo[1,2-f][1,2,4]triazinyl, and [1,2,4]triazolo[4,3-f][1,2,4]triazinyl nucleosides, nucleoside phosphates and prodrugs thereof, wherein the 1? position of the nucleoside sugar is substituted. The compounds, compositions, and methods provided are useful for the treatment of Flaviviridae virus infections, particularly hepatitis C infections.

Abstract: Provided are imidazo[1,5-f][1,2,4]triazinyl, imidazo[1,2-f][1,2,4]triazinyl, and [1,2,4]triazolo[4,3-f][1,2,4]triazinyl nucleosides, nucleoside phosphates and prodrugs thereof. The compounds, compositions, and methods provided are useful for the treatment of Flaviviridae virus infections, particularly hepatitis C infections.

Abstract: An assay uses apoptotic nucleases to screen for apoptosis modulators, in a method of modulating apoptosis, and in a method of aiding in a diagnosis of a disease, among other methods. materials for use in the assay include isolated or recombinant polypeptides and polynucleotides, compositions comprising those isolated or recombinant polypeptides and polynucleotides, vectors, transgenic organisms, and integrated systems among other aspects.

Abstract: The invention provides processes and intermediates useful for preparing integrase inhibiting compounds.

Abstract: An assay uses apoptotic nucleases to screen for apoptosis modulators, in a method of modulating apoptosis, and in a method of aiding in a diagnosis of a disease, among other methods. materials for use in the assay include isolated or recombinant polypeptides and polynucleotides, compositions comprising those isolated or recombinant polypeptides and polynucleotides, vectors, transgenic organisms, and integrated systems among other aspects.

Abstract: A semiconductor device having a capacitor integrated in a damascene structure. In one embodiment, the capacitor is formed entirely within a metallization layer of a damascene structure, having therein a semiconductor device component. Preferably, the capacitor is formed within a trench, having been etched in the dielectric material of the metal layer and the capacitor includes a first capacitor electrode formed within the recess in electrical contact with the device component of the metallization layer. An insulator may be formed over the first capacitor electrode, with a second capacitor electrode formed over the insulator. These elements are preferably conformally deposited within the trench, thereby forming a recess, a portion of which extends within the trench. A subsequently fabricated device component may then be placed in electrical contact with the second capacitor electrode.

Abstract: A semiconductor device having a capacitor integrated in a damascene structure. In one embodiment, the capacitor is formed entirely within a metallization layer of a damascene structure, having therein a semiconductor device component. Preferably, the capacitor is formed within a trench, having been etched in the dielectric material of the metal layer and the capacitor includes a first capacitor electrode formed within the recess in electrical contact with the device component of the metal layer. An insulator may be formed over the first capacitor electrode, with a second capacitor electrode formed over the insulator. These elements are preferably conformally deposited within the trench, thereby forming a recess, a portion of which extends within the trench. A subsequently fabricated device component may then be placed in electrical contact with the second capacitor electrode.