Patents by Inventor Jay S. Burnham
Jay S. Burnham has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8912091Abstract: A backside metal ground plane with improved metal adhesion and methods of manufacture are disclosed herein. The method includes forming at least one through silicon via (TSV) in a substrate. The method further includes forming an oxide layer on a backside of the substrate. The method further includes forming a metalized ground plane on the oxide layer and in electrical contact with an exposed portion of the at least one TSV.Type: GrantFiled: January 10, 2013Date of Patent: December 16, 2014Assignee: International Business Machines CorporationInventors: Jay S. Burnham, Damyon L. Corbin, George A. Dunbar, III, Jeffrey P. Gambino, John C. Hall, Kenneth F. McAvey, Jr., Charles F. Musante, Anthony K. Stamper
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Publication number: 20140191408Abstract: A backside metal ground plane with improved metal adhesion and methods of manufacture are disclosed herein. The method includes forming at least one through silicon via (TSV) in a substrate. The method further includes forming an oxide layer on a backside of the substrate. The method further includes forming a metalized ground plane on the oxide layer and in electrical contact with an exposed portion of the at least one TSV.Type: ApplicationFiled: January 10, 2013Publication date: July 10, 2014Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Jay S. BURNHAM, Damyon L. CORBIN, George A. DUNBAR, III, Jeffrey P. GAMBINO, John C. HALL, Kenneth F. MCAVEY, JR., Charles F. MUSANTE, Anthony K. STAMPER
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Patent number: 8758962Abstract: In one embodiment, the invention is a method and apparatus for sub-pellicle defect reduction on photomasks. One embodiment of a photomask for use in photolithography includes a substrate on which a pattern is formed, the substrate having a frontside and an opposite backside, and a protective coating formed on at least one of the frontside and the backside, the protective coating comprising silicon-based compound.Type: GrantFiled: April 10, 2012Date of Patent: June 24, 2014Assignee: International Business Machines CorporationInventors: Jay S. Burnham, Frances A. Houle, Louis M. Kindt
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Patent number: 8709887Abstract: A method of fabricating a gate dielectric layer. The method includes: providing a substrate; forming a silicon dioxide layer on a top surface of the substrate; performing a plasma nitridation in a reducing atmosphere to convert the silicon dioxide layer into a silicon oxynitride layer. The dielectric layer so formed may be used in the fabrication of MOSFETs.Type: GrantFiled: July 16, 2007Date of Patent: April 29, 2014Assignee: International Business Machines CorporationInventors: Jay S. Burnham, James S. Nakos, James J. Quinlivan, Bernie Roque, Jr., Steven M. Shank, Beth A. Ward
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Publication number: 20120196212Abstract: In one embodiment, the invention is a method and apparatus for sub-pellicle defect reduction on photomasks. One embodiment of a photomask for use in photolithography includes a substrate on which a pattern is formed, the substrate having a frontside and an opposite backside, and a protective coating formed on at least one of the frontside and the backside, the protective coating comprising silicon-based compound.Type: ApplicationFiled: April 10, 2012Publication date: August 2, 2012Applicant: International Business Machines CorporationInventors: JAY S. BURNHAM, Frances A. Houle, Louis M. Kindt
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Patent number: 8173331Abstract: In one embodiment, the invention is a method and apparatus for sub-pellicle defect reduction on photomasks. One embodiment of a photomask for use in photolithography includes a substrate on which a pattern is formed, the substrate having a frontside and an opposite backside, and a protective coating formed on at least one of the frontside and the backside, the protective coating comprising silicon-based compound.Type: GrantFiled: January 11, 2010Date of Patent: May 8, 2012Assignee: International Business Machines CorporationInventors: Jay S. Burnham, Frances A. Houle, Louis M. Kindt
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Publication number: 20100187614Abstract: A method of fabricating a semiconductor structure. The method includes forming a first feature of a first active device and a second feature of a second active device, introducing a first amount of nitrogen into the first feature of the first active device, and introducing a second amount of nitrogen into the second feature of the second active device, the second amount of nitrogen being different from the first amount of nitrogen.Type: ApplicationFiled: April 1, 2010Publication date: July 29, 2010Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Jay S. BURNHAM, John J. ELLIS-MONAGHAN, James S. NAKOS, James J. QUINLIVAN
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Patent number: 7759260Abstract: A method of fabricating a semiconductor structure. The method includes forming a first feature of a first active device and a second feature of a second active device, introducing a first amount of nitrogen into the first feature of the first active device, and introducing a second amount of nitrogen into the second feature of the second active device, the second amount of nitrogen being different from the first amount of nitrogen.Type: GrantFiled: August 16, 2006Date of Patent: July 20, 2010Assignee: International Business Machines CorporationInventors: Jay S Burnham, John J Ellis-Monaghan, James S Nakos, James J Quinlivan
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Publication number: 20100178598Abstract: In one embodiment, the invention is a method and apparatus for sub-pellicle defect reduction on photomasks. One embodiment of a photomask for use in photolithography includes a substrate on which a pattern is formed, the substrate having a frontside and an opposite backside, and a protective coating formed on at least one of the frontside and the backside, the protective coating comprising silicon-based compound.Type: ApplicationFiled: January 11, 2010Publication date: July 15, 2010Applicant: International Business Machines CorporationInventors: JAY S. BURNHAM, Frances A. Houle, Louis M. Kindt
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Patent number: 7342290Abstract: A bilayer dielectric structure for substantially reducing or eliminating metal contaminants formed during subsequent polysilicon deposition is provided. The bilayer dielectric structure includes an upper surface region that is rich in chlorine located atop a bottom surface region. The upper surface region that is rich in chlorine removes metal contaminates that are present atop the structure during subsequent formation of a polysilicon layer. A method of forming the bilayer structure is also provided.Type: GrantFiled: November 4, 2004Date of Patent: March 11, 2008Assignee: International Business Machines CorporationInventors: Jay S. Burnham, James R. Elliott, Kenneth R. Gault, Mousa H. Ishaq, Steven M. Shank, Mary A. St. Lawrence
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Patent number: 7291568Abstract: A method of fabricating a gate dielectric layer, including: providing a substrate; forming a silicon dioxide layer on a top surface of the substrate; performing a plasma nitridation in a reducing atmosphere to convert the silicon dioxide layer into a silicon oxynitride layer. The dielectric layer so formed may be used in the fabrication of MOSFETs.Type: GrantFiled: August 26, 2003Date of Patent: November 6, 2007Assignee: International Business Machines CorporationInventors: Jay S. Burnham, James S. Nakos, James J. Quinlivan, Bernie A. Roque, Jr., Steven M. Shank, Beth A. Ward
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Patent number: 7138691Abstract: A semiconductor structure includes thin gate dielectrics that have been selectively nitrogen enriched. The amount of nitrogen introduced is sufficient to reduce or prevent gate leakage and dopant penetration, without appreciably degrading device performance. A lower concentration of nitrogen is introduced into pFET gate dielectrics than into nFET gate dielectrics. Nitridation may be accomplished selectively by various techniques, including rapid thermal nitridation (RTN), furnace nitridation, remote plasma nitridation (RPN), decoupled plasma nitridation (DPN), well implantation and/or polysilicon implantation.Type: GrantFiled: January 22, 2004Date of Patent: November 21, 2006Assignee: International Business Machines CorporationInventors: Jay S. Burnham, John J. Ellis-Monaghan, James S. Nakos, James J. Quinlivan
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Patent number: 6909157Abstract: Methods such as Remote Plasma Nitridation (RPN) are used to introduce nitrogen into a gate dielectric layer. However, these methods yield nitrided layers where the layers are not uniform, both in cross-sectional profile and in nitrogen profile. Subjecting the nitrided layer to an additional NO anneal process increases the uniformity of the nitrided layer.Type: GrantFiled: September 2, 2003Date of Patent: June 21, 2005Assignee: International Business Machines CorporationInventors: Jay S. Burnham, James S. Nakos, James J. Quinlivan, Steven M. Shank, Deborah A. Tucker, Beth A. Ward
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Patent number: 6838396Abstract: A bilayer dielectric structure for substantially reducing or eliminating metal contaminants formed during subsequent polysilicon deposition is provided. The bilayer dielectric structure includes an upper surface region that is rich in chlorine located atop a bottom surface region. The upper surface region that is rich in chlorine removes metal contaminates that are present atop the structure during subsequent formation of a polysilicon layer. A method of forming the bilayer structure is also provided.Type: GrantFiled: March 28, 2003Date of Patent: January 4, 2005Assignee: International Business Machines CorporationInventors: Jay S. Burnham, James R. Elliott, Kenneth R. Gault, Mousa H. Ishaq, Steven M. Shank, Mary A. St. Lawrence
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Publication number: 20040192065Abstract: A bilayer dielectric structure for substantially reducing or eliminating metal contaminants formed during subsequent polysilicon deposition is provided. The bilayer dielectric structure includes an upper surface region that is rich in chlorine located atop a bottom surface region. The upper surface region that is rich in chlorine removes metal contaminates that are present atop the structure during subsequent formation of a polysilicon layer. A method of forming the bilayer structure is also provided.Type: ApplicationFiled: March 28, 2003Publication date: September 30, 2004Applicant: International Business Machines CorporationInventors: Jay S. Burnham, James R. Elliott, Kenneth R. Gault, Mousa H. Ishaq, Steven M. Shank, Mary A. St. Lawrence
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Patent number: 6780720Abstract: A method of fabricating a gate dielectric layer. The method comprises: providing a substrate; forming a silicon dioxide layer on a top surface of the substrate; exposing the silicon dioxide layer to a plasma nitridation to convert the silicon dioxide layer into a silicon oxynitride layer; and performing a spiked rapid thermal anneal of the silicon oxynitride layer.Type: GrantFiled: July 1, 2002Date of Patent: August 24, 2004Assignee: International Business Machines CorporationInventors: Jay S. Burnham, Anthony I. Chou, Toshiharu Furukawa, Margaret L. Gibson, James S. Nakos, Steven M. Shank
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Patent number: 6706644Abstract: Methods such as Remote Plasma Nitridation (RPN) are used to introduce nitrogen into a gate dielectric layer. However, these methods yield nitrided layers where the layers are not uniform, both in cross-sectional profile and in nitrogen profile. Subjecting the nitrided layer to an additional NO anneal process increases the uniformity of the nitrided layer.Type: GrantFiled: July 26, 2002Date of Patent: March 16, 2004Assignee: International Business Machines CorporationInventors: Jay S. Burnham, James S. Nakos, James J. Quinlivan, Steven M. Shank, Deborah A. Tucker, Beth A. Ward
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Publication number: 20040018688Abstract: Methods such as Remote Plasma Nitridation (RPN) are used to introduce nitrogen into a gate dielectric layer. However, these methods yield nitrided layers where the layers are not uniform, both in cross-sectional profile and in nitrogen profile. Subjecting the nitrided layer to an additional NO anneal process increases the uniformity of the nitrided layer.Type: ApplicationFiled: July 26, 2002Publication date: January 29, 2004Applicant: International Business Machines CorporationInventors: Jay S. Burnham, James S. Nakos, James J. Quinlivan, Steven M. Shank, Deborah A. Tucker, Beth A. Ward
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Publication number: 20040002226Abstract: A method of fabricating a gate dielectric layer. The method comprises: providing a substrate; forming a silicon dioxide layer on a top surface of the substrate; exposing the silicon dioxide layer to a plasma nitridation to convert the silicon dioxide layer into a silicon oxynitride layer; and performing a spiked rapid thermal anneal of the silicon oxynitride layer.Type: ApplicationFiled: July 1, 2002Publication date: January 1, 2004Applicant: International Business Machines CorporationInventors: Jay S. Burnham, Anthony I. Chou, Toshiharu Furukawa, Margaret L. Gibson, James S. Nakos, Steven M. Shank