Patents by Inventor Jay S. Rascoe

Jay S. Rascoe has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8030167
    Abstract: Methods are disclosed for forming a varied impurity profile for a collector using scattered ions while simultaneously forming a subcollector. In one embodiment, the invention includes: providing a substrate; forming a mask layer on the substrate including a first opening having a first dimension; and substantially simultaneously forming through the first opening a first impurity region at a first depth in the substrate (subcollector) and a second impurity region at a second depth different than the first depth in the substrate. The breakdown voltage of a device can be controlled by the size of the first dimension, i.e., the distance of first opening to an active region of the device. Numerous different sized openings can be used to provide devices with different breakdown voltages using a single mask and single implant. A semiconductor device is also disclosed.
    Type: Grant
    Filed: August 15, 2007
    Date of Patent: October 4, 2011
    Assignee: International Business Machines Corporation
    Inventors: Douglas D. Coolbaugh, Louis D. Lanzerotti, Bradley A. Orner, Jay S. Rascoe, David C. Sheridan, Stephen A. St. Onge
  • Patent number: 7550787
    Abstract: Methods are disclosed for forming a varied impurity profile for a collector using scattered ions while simultaneously forming a subcollector. In one embodiment, the invention includes: providing a substrate; forming a mask layer on the substrate including a first opening having a first dimension; and substantially simultaneously forming through the first opening a first impurity region at a first depth in the substrate (subcollector) and a second impurity region at a second depth different than the first depth in the substrate. The breakdown voltage of a device can be controlled by the size of the first dimension, i.e., the distance of first opening to an active region of the device. Numerous different sized openings can be used to provide devices with different breakdown voltages using a single mask and single implant. A semiconductor device is also disclosed.
    Type: Grant
    Filed: May 31, 2005
    Date of Patent: June 23, 2009
    Assignee: International Business Machines Corporation
    Inventors: Douglas D. Coolbaugh, Louis D. Lanzerotti, Bradley A. Orner, Jay S. Rascoe, David C. Sheridan, Stephen A. St. Onge