Abstract: A method for performing an etch process on a substrate includes applying a bias signal and a source signal to an electrode of a plasma processing system. The bias signal and the source signal are pulsed RF signals that together define a repeated pulsed RF cycle, wherein each pulsed RF cycle sequentially includes a first state, a second state, a third state, and a fourth state. The power level of the bias signal in the first state is greater than in the third state, which is greater than in the second state, which is greater than in the fourth state. The power level of the source signal in the first state is greater than in the third state, which is greater than in the second state, which is greater than in the fourth state.

Abstract: In an example, distance determination can utilize an electronic device including an infrared sensor to detect a thermal signature of a subject at a first location and a thermal signature of the subject at a second location, a distance sensor to determine a distance of the subject at the first location from the electronic device, and a controller to determine a physical size based on the determined distance and the thermal signature of the subject at the first location, and determine a distance of the subject at a second location based on the physical size and a thermal signature of the subject at the second location.

Abstract: In an example, distance determination can utilize an electronic device including an infrared sensor to detect a thermal signature of a subject at a first location and a thermal signature of the subject at a second location, a distance sensor to determine a distance of the subject at the first location from the electronic device, and a controller to determine a physical size based on the determined distance and the thermal signature of the subject at the first location, and determine a distance of the subject at a second location based on the physical size and a thermal signature of the subject at the second location.