Patents by Inventor Jay Thomas Scheuer

Jay Thomas Scheuer has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7622722
    Abstract: An ion implantation device with a dual pumping mode and method thereof for use in producing atomic or molecular ion beams are disclosed. In one particular exemplary embodiment, an ion implantation apparatus is provided for controlling a pressure within an ion beam source housing corresponding to an ion beam species being produced. The ion implantation apparatus may include the ion beam source housing comprising a plurality of species for use in ion beam production. A pumping section may also be included for evacuating gas from the ion beam source housing. A controller may further be included for controlling the pumping section according to pumping parameters corresponding to a species of the plurality of species being used for ion beam production.
    Type: Grant
    Filed: October 2, 2007
    Date of Patent: November 24, 2009
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Jonathan Gerald England, Christopher R. Hatem, Jay Thomas Scheuer, Joseph C. Olson
  • Publication number: 20080105828
    Abstract: Techniques for removing molecular fragments from an ion implanter are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for removing molecular fragments from an ion implanter. The apparatus may comprise a supply mechanism configured to couple to an ion source chamber and to supply a feed material to the ion source chamber. The apparatus may also comprise one or more hydrogen-absorbing materials placed in a flow path of the feed material, to prevent at least one portion of hydrogen-containing molecular fragments in the feed material from entering the ion source chamber.
    Type: Application
    Filed: April 11, 2007
    Publication date: May 8, 2008
    Applicant: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Christopher R. HATEM, Jay Thomas SCHEUER, Russell J. LOW, Morgan D. Evans, Jonathan Gerald ENGLAND
  • Publication number: 20080105833
    Abstract: An ion implantation device with a dual pumping mode and method thereof for use in producing atomic or molecular ion beams are disclosed. In one particular exemplary embodiment, an ion implantation apparatus is provided for controlling a pressure within an ion beam source housing corresponding to an ion beam species being produced. The ion implantation apparatus may include the ion beam source housing comprising a plurality of species for use in ion beam production. A pumping section may also be included for evacuating gas from the ion beam source housing. A controller may further be included for controlling the pumping section according to pumping parameters corresponding to a species of the plurality of species being used for ion beam production.
    Type: Application
    Filed: October 2, 2007
    Publication date: May 8, 2008
    Applicant: Varian Semiconductor Equipment Associates,
    Inventors: Jonathan Gerald England, Christopher R. Hatem, Jay Thomas Scheuer, Joseph C. Olson