Patents by Inventor Jay W. Strane
Jay W. Strane has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11189532Abstract: A finned semiconductor structure including sets of relatively wide and relatively narrow fins is obtained by employing hard masks having different quality. A relatively porous hard mask is formed over a first region of a semiconductor substrate and a relatively dense hard mask is formed over a second region of the substrate. Patterning of the different hard masks using a sidewall image transfer process causes greater lateral etching of the relatively porous hard mask than the relatively dense hard mask. A subsequent reactive ion etch to form semiconductor fins causes relatively narrow fins to be formed beneath the relatively porous hard mask and relatively wide fins to be formed beneath the relatively dense hard mask.Type: GrantFiled: December 15, 2019Date of Patent: November 30, 2021Assignee: International Business Machines CorporationInventors: Yi Song, Jay W. Strane, Eric Miller, Fee Li Lie, Richard A. Conti
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Patent number: 11043429Abstract: A method is presented for forming dielectric isolated fins. The method includes forming a plurality of fin structures over a semiconductor substrate, forming spacers adjacent each of the plurality of fins, recessing the semiconductor substrate to form bottom fin profiles, and forming shallow trench isolation (STI) regions between the plurality of fins and the bottom fin profiles. The method further includes etching the STI regions, a select number of the plurality of fins, and a portion of a select number of the bottom fin profiles to create cavities between a mechanical anchor defined between a pair of fins of the plurality of fins, the etching resulting in undercutting of remaining fins.Type: GrantFiled: January 14, 2020Date of Patent: June 22, 2021Assignee: International Business Machines CorporationInventors: Peng Xu, Kangguo Cheng, Jay W. Strane
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Patent number: 10892193Abstract: Semiconductor devices and methods are provided to fabricate fin field-effect transistor (FinFET) devices having uniform fin height profiles. For example, uniformity of fin height profiles for FinFET devices is obtained by implementing a gate oxide removal process which is designed to prevent etching of an isolation layer (e.g., a shallow trench isolation layer) formed of an oxide material during removal of, e.g., sacrificial gate oxide layers of dummy gate structures during a replacement metal gate process.Type: GrantFiled: September 27, 2019Date of Patent: January 12, 2021Assignee: International Business Machines CorporationInventors: Yi Song, Veeraraghavan S. Baskar, Jay W. Strane, Ekmini Anuja De Silva
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Patent number: 10770361Abstract: Semiconductor devices and methods are provided to fabricate fin field-effect transistor (FinFET) devices having uniform fin height profiles. For example, uniformity of fin height profiles for FinFET devices is obtained by implementing a gate oxide removal process which is designed to prevent etching of an isolation layer (e.g., a shallow trench isolation layer) formed of an oxide material during removal of, e.g., sacrificial gate oxide layers of dummy gate structures during a replacement metal gate process.Type: GrantFiled: February 11, 2020Date of Patent: September 8, 2020Assignee: International Business Machines CorporationInventors: Yi Song, Veeraraghavan S. Baskar, Jay W. Strane, Ekmini Anuja De Silva
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Publication number: 20200194314Abstract: A finned semiconductor structure including sets of relatively wide and relatively narrow fins is obtained by employing hard masks having different quality. A relatively porous hard mask is formed over a first region of a semiconductor substrate and a relatively dense hard mask is formed over a second region of the substrate. Patterning of the different hard masks using a sidewall image transfer process causes greater lateral etching of the relatively porous hard mask than the relatively dense hard mask. A subsequent reactive ion etch to form semiconductor fins causes relatively narrow fins to be formed beneath the relatively porous hard mask and relatively wide fins to be formed beneath the relatively dense hard mask.Type: ApplicationFiled: December 15, 2019Publication date: June 18, 2020Inventors: Yi Song, Jay W. Strane, Eric Miller, Fee Li Lie, Richard A. Conti
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Publication number: 20200176332Abstract: Semiconductor devices and methods are provided to fabricate fin field-effect transistor (FinFET) devices having uniform fin height profiles. For example, uniformity of fin height profiles for FinFET devices is obtained by implementing a gate oxide removal process which is designed to prevent etching of an isolation layer (e.g., a shallow trench isolation layer) formed of an oxide material during removal of, e.g., sacrificial gate oxide layers of dummy gate structures during a replacement metal gate process.Type: ApplicationFiled: February 11, 2020Publication date: June 4, 2020Inventors: Yi Song, Veeraraghavan S. Baskar, Jay W. Strane, Ekmini Anuja De Silva
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Patent number: 10672668Abstract: A finned semiconductor structure including sets of relatively wide and relatively narrow fins is obtained by employing hard masks having different quality. A relatively porous hard mask is formed over a first region of a semiconductor substrate and a relatively dense hard mask is formed over a second region of the substrate. Patterning of the different hard masks using a sidewall image transfer process causes greater lateral etching of the relatively porous hard mask than the relatively dense hard mask. A subsequent reactive ion etch to form semiconductor fins causes relatively narrow fins to be formed beneath the relatively porous hard mask and relatively wide fins to be formed beneath the relatively dense hard mask.Type: GrantFiled: May 30, 2018Date of Patent: June 2, 2020Assignee: International Business Machines CorporationInventors: Yi Song, Jay W. Strane, Eric Miller, Fee Li Lie, Richard A. Conti
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Patent number: 10665514Abstract: Semiconductor devices and methods are provided to fabricate fin field-effect transistor (FinFET) devices having uniform fin height profiles. For example, uniformity of fin height profiles for FinFET devices is obtained by implementing a gate oxide removal process which is designed to prevent etching of an isolation layer (e.g., a shallow trench isolation layer) formed of an oxide material during removal of, e.g., sacrificial gate oxide layers of dummy gate structures during a replacement metal gate process.Type: GrantFiled: June 19, 2018Date of Patent: May 26, 2020Assignee: International Business Machines CorporationInventors: Yi Song, Veeraraghavan S. Baskar, Jay W. Strane, Ekmini Anuja De Silva
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Publication number: 20200152520Abstract: A method is presented for forming dielectric isolated fins. The method includes forming a plurality of fin structures over a semiconductor substrate, forming spacers adjacent each of the plurality of fins, recessing the semiconductor substrate to form bottom fin profiles, and forming shallow trench isolation (STI) regions between the plurality of fins and the bottom fin profiles. The method further includes etching the STI regions, a select number of the plurality of fins, and a portion of a select number of the bottom fin profiles to create cavities between a mechanical anchor defined between a pair of fins of the plurality of fins, the etching resulting in undercutting of remaining fins.Type: ApplicationFiled: January 14, 2020Publication date: May 14, 2020Inventors: Peng Xu, Kangguo Cheng, Jay W. Strane
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Patent number: 10636709Abstract: A method is presented for forming dielectric isolated fins. The method includes forming a plurality of fin structures over a semiconductor substrate, forming spacers adjacent each of the plurality of fins, recessing the semiconductor substrate to form bottom fin profiles, and forming shallow trench isolation (STI) regions between the plurality of fins and the bottom fin profiles. The method further includes etching the STI regions, a select number of the plurality of fins, and a portion of a select number of the bottom fin profiles to create cavities between a mechanical anchor defined between a pair of fins of the plurality of fins, the etching resulting in undercutting of remaining fins.Type: GrantFiled: April 10, 2018Date of Patent: April 28, 2020Assignee: International Business Machines CorporationInventors: Peng Xu, Kangguo Cheng, Jay W. Strane
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Patent number: 10586700Abstract: A semiconductor structure includes a plurality of semiconductor fins on an upper surface of a semiconductor substrate. The semiconductor fins spaced apart from one another by a respective trench to define a fin pitch. A multi-layer electrical isolation region is contained in each trench. The multi-layer electrical isolation region includes an oxide layer and a protective layer. The oxide layer includes a first material on an upper surface of the semiconductor substrate. The protective layer includes a second material on an upper surface of the oxide layer. The second material is different than the first material. The first material has a first etch resistance and the second material has a second etch resistance that is greater than the first etch resistance.Type: GrantFiled: November 16, 2017Date of Patent: March 10, 2020Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Michael P. Belyansky, Richard A. Conti, Dechao Guo, Devendra K. Sadana, Jay W. Strane
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Publication number: 20200027796Abstract: Semiconductor devices and methods are provided to fabricate fin field-effect transistor (FinFET) devices having uniform fin height profiles. For example, uniformity of fin height profiles for FinFET devices is obtained by implementing a gate oxide removal process which is designed to prevent etching of an isolation layer (e.g., a shallow trench isolation layer) formed of an oxide material during removal of, e.g., sacrificial gate oxide layers of dummy gate structures during a replacement metal gate process.Type: ApplicationFiled: September 27, 2019Publication date: January 23, 2020Inventors: Yi Song, Veeraraghavan S. Baskar, Jay W. Strane, Ekmini Anuja De Silva
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Patent number: 10535550Abstract: A semiconductor structure includes a plurality of semiconductor fins on an upper surface of a semiconductor substrate. The semiconductor fins spaced apart from one another by a respective trench to define a fin pitch. A multi-layer electrical isolation region is contained in each trench. The multi-layer electrical isolation region includes an oxide layer and a protective layer. The oxide layer includes a first material on an upper surface of the semiconductor substrate. The protective layer includes a second material on an upper surface of the oxide layer. The second material is different than the first material. The first material has a first etch resistance and the second material has a second etch resistance that is greater than the first etch resistance.Type: GrantFiled: August 28, 2017Date of Patent: January 14, 2020Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Michael P. Belyansky, Richard A. Conti, Dechao Guo, Devendra K. Sadana, Jay W. Strane
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Publication number: 20190385916Abstract: Semiconductor devices and methods are provided to fabricate fin field-effect transistor (FinFET) devices having uniform fin height profiles. For example, uniformity of fin height profiles for FinFET devices is obtained by implementing a gate oxide removal process which is designed to prevent etching of an isolation layer (e.g., a shallow trench isolation layer) formed of an oxide material during removal of, e.g., sacrificial gate oxide layers of dummy gate structures during a replacement metal gate process.Type: ApplicationFiled: June 19, 2018Publication date: December 19, 2019Inventors: Yi Song, Veeraraghavan S. Baskar, Jay W. Strane, Ekmini Anuja De Silva
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Publication number: 20190371678Abstract: A finned semiconductor structure including sets of relatively wide and relatively narrow fins is obtained by employing hard masks having different quality. A relatively porous hard mask is formed over a first region of a semiconductor substrate and a relatively dense hard mask is formed over a second region of the substrate. Patterning of the different hard masks using a sidewall image transfer process causes greater lateral etching of the relatively porous hard mask than the relatively dense hard mask. A subsequent reactive ion etch to form semiconductor fins causes relatively narrow fins to be formed beneath the relatively porous hard mask and relatively wide fins to be formed beneath the relatively dense hard mask.Type: ApplicationFiled: May 30, 2018Publication date: December 5, 2019Inventors: Yi Song, Jay W. Strane, Eric Miller, Fee Li Li, Richard A. Conti
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Publication number: 20190311955Abstract: A method is presented for forming dielectric isolated fins. The method includes forming a plurality of fin structures over a semiconductor substrate, forming spacers adjacent each of the plurality of fins, recessing the semiconductor substrate to form bottom fin profiles, and forming shallow trench isolation (STI) regions between the plurality of fins and the bottom fin profiles. The method further includes etching the STI regions, a select number of the plurality of fins, and a portion of a select number of the bottom fin profiles to create cavities between a mechanical anchor defined between a pair of fins of the plurality of fins, the etching resulting in undercutting of remaining fins.Type: ApplicationFiled: April 10, 2018Publication date: October 10, 2019Inventors: Peng Xu, Kangguo Cheng, Jay W. Strane
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Publication number: 20190067079Abstract: A semiconductor structure includes a plurality of semiconductor fins on an upper surface of a semiconductor substrate. The semiconductor fins spaced apart from one another by a respective trench to define a fin pitch. A multi-layer electrical isolation region is contained in each trench. The multi-layer electrical isolation region includes an oxide layer and a protective layer. The oxide layer includes a first material on an upper surface of the semiconductor substrate. The protective layer includes a second material on an upper surface of the oxide layer. The second material is different than the first material. The first material has a first etch resistance and the second material has a second etch resistance that is greater than the first etch resistance.Type: ApplicationFiled: November 16, 2017Publication date: February 28, 2019Inventors: Michael P. Belyansky, Richard A. Conti, Dechao Guo, Devendra K. Sadana, Jay W. Strane
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Publication number: 20190067078Abstract: A semiconductor structure includes a plurality of semiconductor fins on an upper surface of a semiconductor substrate. The semiconductor fins spaced apart from one another by a respective trench to define a fin pitch. A multi-layer electrical isolation region is contained in each trench. The multi-layer electrical isolation region includes an oxide layer and a protective layer. The oxide layer includes a first material on an upper surface of the semiconductor substrate. The protective layer includes a second material on an upper surface of the oxide layer. The second material is different than the first material. The first material has a first etch resistance and the second material has a second etch resistance that is greater than the first etch resistance.Type: ApplicationFiled: August 28, 2017Publication date: February 28, 2019Inventors: Michael P. Belyansky, Richard A. Conti, Dechao Guo, Devendra K. Sadana, Jay W. Strane
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Patent number: 9984935Abstract: A method for providing a uniform recess depth between different fin gap sizes includes depositing a dielectric material between fins on a substrate. Etch lag is tuned for etching the dielectric material between narrow gaps faster than the dielectric material between wider gaps such that the dielectric material in the narrow gaps reaches a target depth. An etch block is formed in the narrow gaps. The wider gaps are etched to the target depth. The etch block is removed.Type: GrantFiled: May 1, 2017Date of Patent: May 29, 2018Assignee: International Business Machines CorporationInventors: Benjamin D. Briggs, Lawrence A. Clevenger, Michael Rizzolo, Jay W. Strane
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Patent number: 9984916Abstract: A method for providing a uniform recess depth between different fin gap sizes includes depositing a dielectric material between fins on a substrate. Etch lag is tuned for etching the dielectric material between narrow gaps faster than the dielectric material between wider gaps such that the dielectric material in the narrow gaps reaches a target depth. An etch block is formed in the narrow gaps. The wider gaps are etched to the target depth. The etch block is removed.Type: GrantFiled: January 6, 2017Date of Patent: May 29, 2018Assignee: International Business Machines CorporationInventors: Benjamin D. Briggs, Lawrence A. Clevenger, Michael Rizzolo, Jay W. Strane